电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

VS-MBR20100CT-N3

产品描述Schottky Diodes & Rectifiers Schottky - TO-220-e3
产品类别分立半导体    二极管   
文件大小162KB,共7页
制造商Vishay(威世)
官网地址http://www.vishay.com
标准
下载文档 详细参数 全文预览

VS-MBR20100CT-N3在线购买

供应商 器件名称 价格 最低购买 库存  
VS-MBR20100CT-N3 - - 点击查看 点击购买

VS-MBR20100CT-N3概述

Schottky Diodes & Rectifiers Schottky - TO-220-e3

VS-MBR20100CT-N3规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Vishay(威世)
包装说明R-PSFM-T3
Reach Compliance Codeunknown
ECCN代码EAR99
其他特性FREE WHEELING DIODE
应用GENERAL PURPOSE
外壳连接CATHODE
配置COMMON CATHODE, 2 ELEMENTS
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
最大正向电压 (VF)0.95 V
JEDEC-95代码TO-220AB
JESD-30 代码R-PSFM-T3
最大非重复峰值正向电流850 A
元件数量2
相数1
端子数量3
最高工作温度150 °C
最低工作温度-65 °C
最大输出电流10 A
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式FLANGE MOUNT
峰值回流温度(摄氏度)NOT SPECIFIED
最大重复峰值反向电压100 V
最大反向电流100 µA
表面贴装NO
技术SCHOTTKY
端子形式THROUGH-HOLE
端子位置SINGLE
处于峰值回流温度下的最长时间NOT SPECIFIED

文档预览

下载PDF文档
VS-MBR20...CTPbF Series, VS-MBR20...CT-N3 Series
www.vishay.com
Vishay Semiconductors
Schottky Rectifier, 2 x 10 A
Base 2
common
cathode
FEATURES
150 °C T
J
operation
Low forward voltage drop
High frequency operation
High
purity,
high
temperature
epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
Guard ring for enhanced ruggedness and long
term reliability
Compliant to RoHS Directive 2002/95/EC
Designed and qualified according to JEDEC-JESD47
Halogen-free according to IEC 61249-2-21 definition
(-N3 only)
Anode
TO-220AB
Anode
2
1 Common 3
cathode
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
I
RM
max.
T
J
max.
Diode variation
E
AS
TO-220AB
2 x 10 A
35 V, 45 V
0.57 V
15 mA at 125 °C
150 °C
Common cathode
8 mJ
DESCRIPTION
This center tap Schottky rectifier has been optimized for low
reverse leakage at high temperature. The proprietary barrier
technology allows for reliable operation up to 150 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FRM
I
FSM
V
F
T
J
T
C
= 135 °C (per leg)
t
p
= 5 μs sine
10 A
pk
, T
J
= 125 °C
Range
CHARACTERISTICS
Rectangular waveform (per device)
VALUES
20
35/45
20
1060
0.57
- 65 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse
voltage
Maximum working peak
reverse voltage
SYMBOL
V
R
35
V
RWM
35
45
45
V
VS-MBR2035CTPbF
VS-MBR2035CT-N3
VS-MBR2045CTPbF
VS-MBR2045CT-N3
UNITS
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average
forward current
per leg
per device
SYMBOL
I
F(AV)
I
FRM
TEST CONDITIONS
T
C
= 135 °C, rated V
R
Rated V
R
, square wave, 20 kHz, T
C
= 135 °C
5 µs sine or 3 µs rect. pulse
Non-repetitive peak surge current
I
FSM
Following any rated load
condition and with rated V
RRM
applied
VALUES
10
20
20
1060
150
2
8
mJ
A
UNITS
Peak repetitive forward current per leg
Surge applied at rated load condition half wave,
single phase, 60 Hz
Repetitive avalanche current per leg
Non-repetitive avalanche energy per leg
Revision: 29-Aug-11
I
AR
E
AS
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
T
J
= 25 °C, I
AS
= 2 A, L = 4 mH
Document Number: 94288
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
【RISC-V MCU CH32V103测评】实时标记文件创建时间
本帖最后由 jennyzhaojie 于 2021-3-19 00:23 编辑 上次提过,在U盘的例程中其新建的文件日期是认为设置的,而非实时时间,因此在识读文件创建日期不能当真。 那是否能为创建的文件添加上 ......
jennyzhaojie 国产芯片交流
转,,电动车充电器图纸大全
电动车充电器图纸大全,几十张充电器图纸 273493 ...
yjtyjt 电源技术
早晨大家吃饱了么?
再上一张昨天夜里才做好的面包,因为用的是一小块老面(前一两天做面包拧下冰箱保存的)和极少极少的酵母,所以发酵极慢,到半夜了才烘烤,就这样好像还是没有发酵到位,因为体积还是偏小. 不过这次 ......
wangfuchong 聊聊、笑笑、闹闹
倒计时60秒源程序
#include #define uint unsigned int#define uchar unsigned charsbit P26=P2^6;sbit P27=P2^7;sbit s1=P3^0;sbit s2=P3^1;sbit s3=P3^6;sbit beep=P2^5;uchar temp,shi,ge,t;uchar code table= ......
guoyuanqiang 单片机
音频设备的3种硬件接口--PCM,IIS和AC97
音频设备的3种硬件接口--PCM,IIS和AC97一些Audio Codec中总是出现PCM字样,一直以为它是一种音频数据编码格式,但是越看Spec觉得越不像,赶紧到网上查了下,发现它是一种类似与IIS的数据传输格 ......
wstt 微控制器 MCU
好论文
湖北2008TI杯的获奖论文,和大家分享了............
cheng-happy 单片机

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 1197  1081  177  2781  593  8  23  52  30  58 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved