Bipolar Transistors - BJT 100mA 60V Dual PNP
参数名称 | 属性值 |
Product Attribute | Attribute Value |
制造商 Manufacturer | ON Semiconductor(安森美) |
产品种类 Product Category | Bipolar Transistors - BJT |
RoHS | N |
安装风格 Mounting Style | SMD/SMT |
封装 / 箱体 Package / Case | SOT-563-6 |
Transistor Polarity | PNP |
Configuration | Dual |
Collector- Emitter Voltage VCEO Max | - 60 V |
Collector- Base Voltage VCBO | - 50 V |
Emitter- Base Voltage VEBO | 6 V |
Collector-Emitter Saturation Voltage | - 0.5 V |
Maximum DC Collector Current | 0.1 A |
Gain Bandwidth Product fT | 140 MHz |
最大工作温度 Maximum Operating Temperature | + 150 C |
高度 Height | 0.55 mm |
长度 Length | 1.6 mm |
系列 Packaging | Reel |
宽度 Width | 1.2 mm |
Continuous Collector Current | - 0.1 A |
DC Collector/Base Gain hfe Min | 120 |
最小工作温度 Minimum Operating Temperature | - 55 C |
Pd-功率耗散 Pd - Power Dissipation | 357 mW |
单位重量 Unit Weight | 0.000106 oz |
EMT1DXV6T5 | EMT1DXV6T1 | |
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描述 | Bipolar Transistors - BJT 100mA 60V Dual PNP | Bipolar Transistors - BJT 100mA 60V Dual PNP |
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