Si4496DY
Vishay Siliconix
N-Channel 100-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
V
DS
(V)
100
D
TrenchFETr Power MOSFET
D
Low Gate Charge
D
100% R
g
Tested
I
D
(A)
7.7
6.9
r
DS(on)
(W)
0.025 @ V
GS
= 10 V
0.031 @ V
GS
= 6.0 V
APPLICATIONS
D
Primary Side Switch
D
SO-8
S
S
S
G
1
2
3
4
Top View
Ordering Information: Si4496DY
Si4496DY-T1 (with Tape and Reel)
S
N-Channel MOSFET
8
7
6
5
D
D
D
D
G
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
Pulsed Drain Current
Single Avalanch Current
Single Avalanch Energy
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
L = 0 1 mH
0.1
T
A
= 25_C
T
A
= 70_C
Symbol
V
DS
V
GS
I
D
I
DM
I
AS
E
AS
I
S
P
D
T
J
, T
stg
10 secs
100
"20
7.7
6.2
30
35
61
2.6
3.1
2.0
Steady State
Unit
V
4.6
4.1
A
mJ
1.2
1.4
0.9
A
W
_C
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum J
M i
Junction-to-Ambient
a
ti t A bi t
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 70685
S-31726—Rev. D, 18-Aug-03
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t
v
10 sec
Steady State
Steady State
Symbol
R
thJA
R
thJF
Typical
33
73
15
Maximum
40
90
18
Unit
_C/W
C/W
1
Si4496DY
Vishay Siliconix
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate Threshold Voltage
Linear Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State
Drain Source On State
Resistance
a
V
GS(th)
V
T
I
GSS
I
DSS
I
D(on)
r
DS( )
DS(on)
g
fs
V
SD
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= 80 V, V
GS
= 0 V
V
DS
= 80 V, V
GS
= 0 V, T
J
= 55_C
V
DS
w
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 7.7 A
V
GS
= 6.0 V, I
D
= 6.9 A
V
DS
= 15 V, I
D
= 7.7 A
I
S
= 2.6 A, V
GS
= 0 V
30
0.021
0.025
23
0.75
1.2
0.025
0.031
W
S
V
V
DS
= V
GS
, I
D
= 250
mA
2.0
4.4
"100
1
5
V
nA
mA
A
Symbol
Test Condition
Min
Typ
Max
Unit
Forward Transconductance
a
Diode Forward Voltage
a
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
g
Q
gs
Q
gd
R
G
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= 2.6 A, di/dt = 100 A/ms
V
DD
= 50 V, R
L
= 50
W
I
D
^
1.0 A, V
GEN
= 10 V, R
G
= 6
W
0.5
V
DS
= 50 V, V
GS
= 10 V, I
D
= 7.7 A
29
9.9
10.3
1.2
17
13
36
26
45
1.8
26
20
54
40
68
ns
W
36
nC
Notes
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
30
V
GS
= 10 thru 6 V
24
I
D
- Drain Current (A)
I
D
- Drain Current (A)
24
30
Transfer Characteristics
18
5V
12
18
12
T
C
= 125_C
6
25_C
- 55_C
0
6
4V
0
1
2
3
4
5
0
V
DS
- Drain-to-Source Voltage (V)
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0
1
2
3
4
5
6
V
GS
- Gate-to-Source Voltage (V)
Document Number: 70685
S-31726—Rev. D, 18-Aug-03
2
Si4496DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.04
r
DS(on)
- On-Resistance (
W
)
2000
Capacitance
0.03
C - Capacitance (pF)
V
GS
= 6 V
V
GS
= 10 V
1500
C
iss
0.02
1000
0.01
500
C
oss
0.00
0
5
10
15
20
25
30
0
0
C
rss
20
40
60
80
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
Gate Charge
10
V
GS
- Gate-to-Source Voltage (V)
V
DS
= 50 V
I
D
= 7.7 A
8
2.3
2.0
1.7
1.4
1.1
0.8
0.5
- 50
On-Resistance vs. Junction Temperature
V
GS
= 10 V
I
D
= 7.7 A
6
4
2
0
0
5
10
15
20
25
30
Q
g
- Total Gate Charge (nC)
r
DS(on)
- On-Resistance (
W)
(Normalized)
- 25
0
25
50
75
100
125
150
T
J
- Junction Temperature (_C)
Source-Drain Diode Forward Voltage
30
0.06
0.05
0.04
0.03
0.02
0.01
0.00
0.2
0.4
0.6
0.8
1.0
1.2
0
On-Resistance vs. Gate-to-Source Voltage
10
T
J
= 150_C
r
DS(on)
- On-Resistance (
W
)
I
S
- Source Current (A)
I
D
= 7.7 A
T
J
= 25_C
1
0.0
2
4
6
8
10
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Document Number: 70685
S-31726—Rev. D, 18-Aug-03
www.vishay.com
3
Si4496DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
1.0
50
40
I
D
= 250
mA
Power (W)
30
Single Pulse Power
0.5
V
GS(th)
Variance (V)
0.0
- 0.5
20
- 1.0
10
- 1.5
- 50
- 25
0
25
50
75
100
125
150
0
0.01
0.1
1
Time (sec)
10
100
600
T
J
- Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
1
Square Wave Pulse Duration (sec)
Notes:
P
DM
t
1
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 73_C/W
3. T
JM
- T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
t
1
t
2
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
Square Wave Pulse Duration (sec)
1
10
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Document Number: 70685
S-31726—Rev. D, 18-Aug-03
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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