SA58670
2.1 W/channel stereo class-D audio amplifier
Rev. 03 — 11 June 2009
Product data sheet
1. General description
The SA58670 is a stereo, filter-free class-D audio amplifier which is available in an
HVQFN20 package with the exposed Die Attach Paddle (DAP).
The SA58670 features independent shutdown controls for each channel. The gain may be
set at 6 dB, 12 dB, 18 dB or 24 dB with gain select pins G0 and G1. Improved immunity to
noise and RF rectification is increased by high PSRR and differential circuit topology. Fast
start-up time and small package makes it an ideal choice for both cellular handsets and
PDAs.
The SA58670 delivers 1.4 W/channel at 5.0 V and 720 mW/channel at 3.6 V into 8
Ω.
It
delivers 2.1 W/channel at 5.0 V into 4
Ω.
The maximum power efficiency is excellent at
70 % to 74 % into 4
Ω
and 84 % to 88 % into 8
Ω.
The SA58670 provides thermal and
short-circuit shutdown protection.
2. Features
I
Output power:
N
2.1 W/channel into 4
Ω
at 5.0 V
N
1.4 W/channel into 8
Ω
at 5.0 V
N
720 mW/channel into 8
Ω
at 3.6 V
I
Supply voltage: 2.5 V to 5.5 V
I
Independent shutdown control for each channel
I
Selectable gain: 6 dB, 12 dB, 18 dB and 24 dB
I
High SVRR:
−77
dB at 217 Hz
I
Fast start-up time: 3.5 ms
I
Low supply current
I
Low shutdown current
I
Short-circuit and thermal protection
I
Space savings with 4 mm
×
4 mm HVQFN20 package
I
Low junction to ambient thermal resistance of 24 K/W with exposed DAP
3. Applications
I
I
I
I
I
Wireless and cellular handset and PDA
Portable DVD player
USB speaker
Notebook PC
Portable radio and gaming
NXP Semiconductors
SA58670
2.1 W/channel stereo class-D audio amplifier
I
Educational toy
4. Ordering information
Table 1.
Ordering information
Package
Name
SA58670BS
HVQFN20
Description
plastic thermal enhanced very thin quad flat package;
no leads; 20 terminals; body 4
×
4
×
0.85 mm
Version
SOT917-1
Type number
5. Block diagram
SA58670
3, 13 PVDD
V
DD
INRP
right input
INRN
16
17
14 OUTRP
GAIN
ADJUST
PWM
H-
BRIDGE
11 OUTRN
n.c.
6, 10
INTERNAL
OSCILLATOR
GND
INLP
left input
INLN
20
19
2 OUTLP
GAIN
ADJUST
PWM
H-
BRIDGE
5 OUTLN
G0
G1
SDR
15
1
8
300 kΩ
9 AVDD
V
DD
BIAS
CIRCUITRY
SHORT-CIRCUIT
PROTECTION
4, 12
PGND
AGND
SDL
7
300 kΩ
18
001aah482
Refer to
Table 6
for gain selection.
Fig 1.
Block diagram
SA58670_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 11 June 2009
2 of 25
NXP Semiconductors
SA58670
2.1 W/channel stereo class-D audio amplifier
6. Pinning information
6.1 Pinning
18 AGND
17 INRN
16 INRP
15 G0
14 OUTRP
13 PVDD
12 PGND
DAP
(1)
n.c. 10
6
7
8
9
11 OUTRN
19 INLN
20 INLP
1
2
3
4
5
n.c.
terminal 1
index area
G1
OUTLP
PVDD
PGND
OUTLN
SA58670BS
SDR
AVDD
SDL
001aah483
Transparent top view
(1) Exposed Die Attach Paddle (DAP).
Fig 2.
Pin configuration for HVQFN20
6.2 Pin description
Table 2.
Symbol
G1
OUTLP
PVDD
PGND
OUTLN
n.c.
SDL
SDR
AVDD
n.c.
OUTRN
PGND
PVDD
OUTRP
G0
INRP
INRN
AGND
Pin description
Pin
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
Description
gain select input 1
left channel positive output
power supply voltage (level same as AVDD)
power ground
left channel negative output
not connected
left channel shutdown input (active LOW)
right channel shutdown input (active LOW)
analog supply voltage (level same as PVDD)
not connected
right channel negative output
power ground
power supply voltage (level same as AVDD)
right channel positive output
gain select input 0
right channel positive input
right channel negative input
analog ground
SA58670_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 11 June 2009
3 of 25
NXP Semiconductors
SA58670
2.1 W/channel stereo class-D audio amplifier
Pin description
…continued
Pin
19
20
(DAP)
Description
left channel negative input
left channel positive input
exposed die attach paddle; connect to ground plane heat spreader
Table 2.
Symbol
INLN
INLP
-
7. Limiting values
Table 3.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
Symbol
V
DD
V
I
Parameter
supply voltage
input voltage
Conditions
Active mode
Shutdown mode
pin SDL
pin SDR
other pins
P
power dissipation
derating factor 41.6 mW/K
T
amb
= 25
°C
T
amb
= 75
°C
T
amb
= 85
°C
T
amb
T
j
T
stg
V
ESD
ambient temperature
junction temperature
storage temperature
electrostatic discharge
voltage
human body model
machine model
operating in free air
operating
-
-
-
−40
−40
−65
±2000
±200
5.2
3.12
2.7
+85
+150
+85
-
-
W
W
W
°C
°C
°C
V
V
Min
−0.3
−0.3
GND
GND
−0.3
Max
+6.0
+7.0
V
DD
V
DD
V
DD
+ 0.3
Unit
V
V
V
V
V
[1]
V
DD
is the supply voltage on pins PVDD and pin AVDD.
GND is the voltage ground on pins PGND and pin AGND.
SA58670_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 11 June 2009
4 of 25
NXP Semiconductors
SA58670
2.1 W/channel stereo class-D audio amplifier
8. Static characteristics
Table 4.
Static characteristics
T
amb
= 25
°
C; unless otherwise specified
[1]
.
Symbol
V
DD
I
DD
Parameter
supply voltage
supply current
Conditions
operating
V
DD
= 2.5 V; no load
V
DD
= 3.6 V; no load
V
DD
= 5.5 V; no load
I
DD(sd)
PSRR
V
i(cm)
CMRR
V
IH
V
IL
I
IH
I
IL
f
sw
G
v(cl)
shutdown mode supply current
power supply rejection ratio
common-mode input voltage
common mode rejection ratio
HIGH-level input voltage
LOW-level input voltage
HIGH-level input current
LOW-level input current
switching frequency
closed-loop voltage gain
inputs are shorted together;
V
DD
= 2.5 V to 5.5 V
V
DD
= 2.5 V to 5.5 V;
pins SDL, SDR, G0, G1
V
DD
= 2.5 V to 5.5 V;
pins SDL, SDR, G0, G1
V
DD
= 5.5 V; V
I
= V
DD
V
DD
= 5.5 V; V
I
= 0 V
V
DD
= 2.5 V to 5.5 V
V
G0
= V
G1
= 0.35 V
V
G0
= V
DD
; V
G1
= 0.35 V
V
G0
= 0.35 V; V
G1
= V
DD
V
G0
= V
G1
= V
DD
Pins OUTLP, OUTLN, OUTRP and OUTRN
R
DSon
drain-source on-state resistance
V
DD
= 2.5 V
V
DD
= 3.6 V
V
DD
= 5.5 V
|V
O(offset)
|
output offset voltage
measured differentially; inputs
AC grounded; G
v(cl)
= 6 dB;
V
DD
= 2.5 V to 5.5 V
V
SDR
= V
SDL
= 0.35 V
-
-
-
-
700
570
500
5
-
-
-
10
mΩ
mΩ
mΩ
mV
no input signal;
V
SDR
= V
SDL
= GND
V
DD
= 2.5 V to 5.5 V
Min
2.5
-
-
-
-
-
0.5
-
0.7
×
V
DD
0
-
-
250
5.5
11.5
17.5
23.5
Typ
-
4
5
6
10
−75
-
−69
-
-
-
-
300
6
12
18
24
Max
5.5
6
7.5
9
1000
−55
V
DD
−
0.8
−50
V
DD
0.3
×
V
DD
50
5
350
6.5
12.5
18.5
24.5
Unit
V
mA
mA
mA
nA
dB
V
dB
V
V
µA
µA
kHz
dB
dB
dB
dB
Z
o(sd)
shutdown mode output
impedance
-
2
-
kΩ
[1]
V
DD
is the supply voltage on pins PVDD and pin AVDD.
GND is the ground supply voltage on pins PGND and pin AGND.
SA58670_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 11 June 2009
5 of 25
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