HD1750FX
HIGH VOLTAGE NPN POWER TRANSISTOR FOR HIGH
DEFINITION AND NEW SUPER-SLIM CRT DISPLAYS
■
STATE-OF-THE-ART TECHNOLOGY:
DIFFUSED COLLECTOR "ENHANCED
GENERATION" EHVS1
WIDER RANGE OF OPTIMUM DRIVE
CONDITIONS
LESS SENSITIVE TO OPERATING
TEMPERATURE VARIATION
FULLY INSULATED POWER PACKAGE U.L.
COMPLIANT
Figure 1: Package
■
■
■
APPLICATIONS
■
ISOWATT218FX
HORIZONTAL DEFLECTION OUTPUT FOR
DIGITAL TV, HDTV AND HIGH-END
MONITORS
Figure 2: Internal Schematic Diagram
DESCRIPTION
The device is manufactured using Diffused
Collector in Planar technology adopting "Enhance
High Voltage Structure" (EHVS1) developed to fit
High-Definition CRT displays.
The new HD product series show improved silicon
efficiency bringing updated performance to the
Horizontal Deflection stage.
Table 1: Order Codes
Part Number
HD1750FX
Marking
HD1750FX
Package
ISOWATT218FX
Packaging
TUBE
December 2005
Rev. 2
1/8
HD1750FX
Table 2: Absolute Maximum Ratings
Symbol
V
CES
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
V
ins
T
stg
T
J
Parameter
Collector-Emitter Voltage (V
BE
= 0)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Collector Peak Current (t
p
< 5ms)
Base Current
Base Peak Current (t
p
< 5ms)
Total Dissipation at T
C
= 25
o
C
Insulation Withstand Voltage (RMS) from All Three Leads to
External Heatsink
Storage Temperature
Max. Operating Junction Temperature
Value
1700
800
10
24
36
12
18
75
2500
-65 to 150
150
Unit
V
V
V
A
A
A
A
W
V
°C
°C
Table 3: Thermal Data
R
thj-case
Thermal Resistance Junction-Case
Max
1.67
o
C/W
Table 4: Electrical Characteristics (T
case
= 25
o
C unless otherwise specified)
Symbol
I
CES
Parameter
(V
BE
= 0)
I
EBO
Emitter Cut-off Current
(I
C
= 0)
V
CEO(sus)
* Collector-Emitter
Sustaining Voltage
(I
B
= 0 )
V
EBO
V
CE(sat)
*
V
BE(sat)
*
h
FE
Emitter-Base Voltage
(I
C
= 0 )
Collector-Emitter
I
C
= 12 A
Saturation Voltage
Base-Emitter Saturation I
C
= 12 A
Voltage
DC Current Gain
I
C
= 1 A
I
C
= 12 A
INDUCTIVE LOAD
t
s
t
f
Storage Time
Fall Time
I
C
= 12 A
I
B(on)
= 1.9 A
V
CE(fly)
= 1320 V
L
BB(off)
= 0.8 µH
INDUCTIVE LOAD
t
s
t
f
Storage Time
Fall Time
I
C
= 6.5 A
I
B(on)
= 1.2 A
V
CE(fly)
= 1220 V
f
h
= 100 kHz
I
B(off)
= -5.85 A
V
BE(off)
= -2.7 V
1.7
180
2
250
µs
ns
I
B
= 3 A
I
B
= 3 A
V
CE
= 5 V
V
CE
= 5 V
f
h
= 31250 Hz
I
B(off)
= -8.1 A
V
BE(off)
= -2.7 V
3.1
350
3.8
500
µs
ns
6.5
0.95
30
9.5
3
1.5
V
V
I
E
= 10 mA
10
V
I
C
= 10 mA
800
V
Test Conditions
Min.
Typ.
Max.
0.2
T
C
= 125
o
C
2
10
Unit
mA
mA
µA
Collector Cut-off Current V
CE
= 1700 V
V
CE
= 1700 V
V
EB
= 5 V
L
BB(off)
= 0.25 µH
* Pulsed: Pulsed duration = 300
ms,
duty cycle
≤
1.5
%.
2/8
HD1750FX
Figure 3: Safe Operating Area
Figure 6: Derating Curve
Figure 4: Output Chatacterisctics
Figure 7: Reverse Biased SOA
Figure 5: DC Current Gain
Figure 8: DC Current Gain
3/8
HD1750FX
Figure 9: Collector-Emitter Saturation Voltage
Figure 12: Base-Emitter Saturation Voltage
Figure 10: Power Losses
Figure 13: Power Losses
Figure 11: Inductive Load Switching Time
Figure 14: Inductive Load Switching Time
4/8
HD1750FX
Figure 15: Power Losses and Inductive Load Switching Test Circuit
Figure 16: Reverse Biased Safe Operating Area Test Circuit
5/8
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