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CAT25080HU2I-GT3

产品描述EEPROM 8KB SPI SER CMOS EEPROM
产品类别存储    存储   
文件大小187KB,共19页
制造商ON Semiconductor(安森美)
官网地址http://www.onsemi.cn
标准
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CAT25080HU2I-GT3概述

EEPROM 8KB SPI SER CMOS EEPROM

CAT25080HU2I-GT3规格参数

参数名称属性值
Brand NameON Semiconductor
是否无铅不含铅
是否Rohs认证符合
厂商名称ON Semiconductor(安森美)
零件包装代码SON
包装说明HVSON, SOLCC8,.08,20
针数8
制造商包装代码517AW
Reach Compliance Codecompliant
ECCN代码EAR99
Factory Lead Time1 week
其他特性100 YEAR DATA RETENTION
最大时钟频率 (fCLK)5 MHz
数据保留时间-最小值100
耐久性1000000 Write/Erase Cycles
JESD-30 代码S-PDSO-N8
JESD-609代码e4
长度2 mm
内存密度8192 bit
内存集成电路类型EEPROM
内存宽度8
湿度敏感等级1
功能数量1
端子数量8
字数1024 words
字数代码1000
工作模式SYNCHRONOUS
最高工作温度85 °C
最低工作温度-40 °C
组织1KX8
封装主体材料PLASTIC/EPOXY
封装代码HVSON
封装等效代码SOLCC8,.08,20
封装形状SQUARE
封装形式SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE
并行/串行SERIAL
峰值回流温度(摄氏度)NOT SPECIFIED
电源2/5 V
认证状态Not Qualified
座面最大高度0.55 mm
串行总线类型SPI
最大待机电流0.000002 A
最大压摆率0.002 mA
最大供电电压 (Vsup)5.5 V
最小供电电压 (Vsup)2.5 V
标称供电电压 (Vsup)5 V
表面贴装YES
技术CMOS
温度等级INDUSTRIAL
端子面层Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式NO LEAD
端子节距0.5 mm
端子位置DUAL
处于峰值回流温度下的最长时间NOT SPECIFIED
宽度2 mm
最长写入周期时间 (tWC)5 ms
写保护HARDWARE/SOFTWARE

文档预览

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CAT25080, CAT25160
8-Kb and 16-Kb SPI Serial
CMOS EEPROM
Description
The CAT25080/25160 are 8−Kb/16−Kb Serial CMOS EEPROM
devices internally organized as 1024x8/2048x8 bits. They feature a
32−byte page write buffer and support the Serial Peripheral Interface
(SPI) protocol. The device is enabled through a Chip Select (CS)
input. In addition, the required bus signals are a clock input (SCK),
data input (SI) and data output (SO) lines. The HOLD input may be
used to pause any serial communication with the CAT25080/25160
device. These devices feature software and hardware write protection,
including partial as well as full array protection.
Features
http://onsemi.com
SOIC−8
V SUFFIX
CASE 751BD
UDFN−8
HU2 SUFFIX
CASE 517AW
TDFN−8*
VP2 SUFFIX
CASE 511AK
20 MHz SPI (5 V) Compatible
1.8 V to 5.5 V Supply Voltage Range
SPI Modes (0,0) & (1,1)
32−byte Page Write Buffer
Self−timed Write Cycle
Hardware and Software Protection
Block Write Protection
Protect 1/4, 1/2 or Entire EEPROM Array
Low Power CMOS Technology
1,000,000 Program/Erase Cycles
100 Year Data Retention
Industrial and Extended Temperature Range
8−lead PDIP, SOIC, TSSOP and 8−pad TDFN, UDFN Packages
These Devices are Pb−Free, Halogen Free/BFR Free, and RoHS
Compliant
V
CC
PDIP−8
L SUFFIX
CASE 646AA
TSSOP−8
Y SUFFIX
CASE 948AL
UDFN−8
HU4 SUFFIX
CASE 517AZ
PIN CONFIGURATION
CS
SO
WP
V
SS
1
V
CC
HOLD
SCK
SI
PDIP (L), SOIC (V), TSSOP (Y),
TDFN* (VP2), UDFN (HU2, HU4)
* Not recommended for new designs
PIN FUNCTION
Pin Name
Function
Chip Select
Serial Data Output
Write Protect
Ground
Serial Data Input
Serial Clock
Hold Transmission Input
Power Supply
CS
SI
CS
WP
HOLD
SCK
V
SS
CAT25080
CAT25160
SO
SO
WP
V
SS
SI
SCK
HOLD
V
CC
Figure 1. Functional Symbol
†The exposed pad for the TDFN/UDFN packages can
be left floating or connected to Ground.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 18 of this data sheet.
©
Semiconductor Components Industries, LLC, 2012
August, 2012
Rev. 8
1
Publication Order Number:
CAT25080/D

CAT25080HU2I-GT3相似产品对比

CAT25080HU2I-GT3 CAT25080HU4I-GT3 CAT25160YI-GT3JN CAT25080VI-GT3 CAT25080YI-GT3JN CAT25160HU4I-GT3 CAT25080YI-G CAT25080VI-G CAT25080YI-GT3
描述 EEPROM 8KB SPI SER CMOS EEPROM EEPROM 8KB SPI SER CMOS EEPROM EEPROM 16KB SPI SER CMOS EEPROM EEPROM 8K SPI Serial CMOS EEPROM EEPROM 8KB SPI SER CMOS EEPROM EEPROM 16KB SPI SER CMOS EEPROM EEPROM (1024x8) 8K 1.8-5.5V EEPROM (1024x8) 8K 1.8-5.5V EEPROM 8K SPI Serial CMOS EEPROM
Brand Name ON Semiconductor ON Semiconductor - ON Semiconductor - ON Semiconductor - - ON Semiconductor
是否无铅 不含铅 不含铅 - 不含铅 - 不含铅 - - 不含铅
包装说明 HVSON, SOLCC8,.08,20 UDFN-8 - SOIC-8 - UDFN-8 - - TSSOP-8
针数 8 8 - 8 - 8 - - 8
制造商包装代码 517AW 517AZ - 751BD - 517AZ - - 948AL
Reach Compliance Code compliant compliant - compliant - compliant - - compliant
Factory Lead Time 1 week 4 weeks - 8 weeks - 4 weeks - - 1 week
最大时钟频率 (fCLK) 5 MHz 5 MHz - 5 MHz - 5 MHz - - 5 MHz
JESD-30 代码 S-PDSO-N8 R-PDSO-N8 - R-PDSO-G8 - R-PDSO-N8 - - R-PDSO-G8
JESD-609代码 e4 e4 - e4 - e4 - - e4
长度 2 mm 3 mm - 4.9 mm - 3 mm - - 4.4 mm
内存密度 8192 bit 8192 bit - 8192 bit - 16384 bit - - 8192 bit
内存集成电路类型 EEPROM EEPROM - EEPROM - EEPROM - - EEPROM
内存宽度 8 8 - 8 - 8 - - 8
湿度敏感等级 1 1 - 1 - 1 - - 1
功能数量 1 1 - 1 - 1 - - 1
端子数量 8 8 - 8 - 8 - - 8
字数 1024 words 1024 words - 1024 words - 2048 words - - 1024 words
字数代码 1000 1000 - 1000 - 2000 - - 1000
工作模式 SYNCHRONOUS SYNCHRONOUS - SYNCHRONOUS - SYNCHRONOUS - - SYNCHRONOUS
最高工作温度 85 °C 85 °C - 85 °C - 85 °C - - 85 °C
最低工作温度 -40 °C -40 °C - -40 °C - -40 °C - - -40 °C
组织 1KX8 1KX8 - 1KX8 - 2KX8 - - 1KX8
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY - PLASTIC/EPOXY - - PLASTIC/EPOXY
封装代码 HVSON HVSON - SOP - HVSON - - TSSOP
封装形状 SQUARE RECTANGULAR - RECTANGULAR - RECTANGULAR - - RECTANGULAR
封装形式 SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE - SMALL OUTLINE - SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE - - SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
并行/串行 SERIAL SERIAL - SERIAL - SERIAL - - SERIAL
座面最大高度 0.55 mm 0.55 mm - 1.75 mm - 0.55 mm - - 1.2 mm
串行总线类型 SPI SPI - SPI - SPI - - SPI
最大供电电压 (Vsup) 5.5 V 5.5 V - 5.5 V - 5.5 V - - 5.5 V
最小供电电压 (Vsup) 2.5 V 1.8 V - 2.5 V - 1.8 V - - 2.5 V
标称供电电压 (Vsup) 5 V 5 V - 5 V - 5 V - - 5 V
表面贴装 YES YES - YES - YES - - YES
技术 CMOS CMOS - CMOS - CMOS - - CMOS
温度等级 INDUSTRIAL INDUSTRIAL - INDUSTRIAL - INDUSTRIAL - - INDUSTRIAL
端子面层 Nickel/Palladium/Gold (Ni/Pd/Au) Nickel/Palladium/Gold (Ni/Pd/Au) - Nickel/Palladium/Gold (Ni/Pd/Au) - Nickel/Palladium/Gold (Ni/Pd/Au) - - Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式 NO LEAD NO LEAD - GULL WING - NO LEAD - - GULL WING
端子节距 0.5 mm 0.5 mm - 1.27 mm - 0.5 mm - - 0.65 mm
端子位置 DUAL DUAL - DUAL - DUAL - - DUAL
宽度 2 mm 2 mm - 3.9 mm - 2 mm - - 3 mm
最长写入周期时间 (tWC) 5 ms 5 ms - 5 ms - 5 ms - - 5 ms

 
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