• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
PowerPAK SC-70-6L-Single
1
D
2
D
3
6
D
5
D
S
4
S
2.05 mm
G
APPLICATIONS
• Portable Devices such as Smart Phones,
Tablet PCs and Mobile Computing
- Battery Switch
- Load Switch
- Power Management
Marking Code
B1 X
Part # code
S
G
2.05 mm
Ordering Information:
SiA467EDJ-T1-GE3 (Lead (Pb)-free and Halogen-free)
XXX
Lot Traceability
and Date code
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
T
C
= 25 °C
Continuous Drain Current (T
J
= 150 °C)
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Pulsed Drain Current (t = 300 μs)
Continuous Source-Drain Diode Current
Single Avalanche Current
Single Avalanche Energy
T
C
= 25 °C
T
A
= 25 °C
L = 0.1 mH
T
C
= 25 °C
Maximum Power Dissipation
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
d, e
T
J
, T
stg
P
D
I
DM
I
S
I
AS
E
AS
I
D
Symbol
V
DS
V
GS
Limit
- 12
±8
- 31
- 25
- 13
b, c
- 11
b, c
- 60
- 16
- 2.9
b, c
- 11
5.8
19
12
3.5
b, c
2.2
b, c
- 50 to 150
260
°C
W
mJ
A
Unit
V
THERMAL RESISTANCE RATINGS
Parameter
Maximum
Junction-to-Ambient
b, f
t
5s
Steady State
Maximum Junction-to-Case (Drain)
Symbol
R
thJA
R
thJC
Typical
28
5.3
Maximum
36
6.5
Unit
°C/W
Notes
a. T
C
= 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 80 °C/W.
S13-0107-Rev. A, 21-Jan-13
Document Number: 62816
1
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
SiA467EDJ
www.vishay.com
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain
Current
a
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
GS
= 0 V, I
D
= - 250 μA
I
D
= - 250 μA
V
DS
= V
GS
, I
D
= - 250 μA
V
DS
= 0 V, V
GS
= ± 8 V
V
DS
= 0 V, V
GS
= ± 4.5 V
V
DS
= - 12 V, V
GS
= 0 V
V
DS
= - 12 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
- 5 V, V
GS
= - 4.5 V
V
GS
= - 4.5 V, I
D
= - 5 A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= - 3.7 V, I
D
= - 5 A
V
GS
= - 2.5 V, I
D
= - 4 A
V
GS
= - 1.8 V, I
D
= - 2 A
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= - 10 A, dI/dt = 100 A/μs, T
J
= 25 °C
I
S
= - 10 A, V
GS
= 0 V
- 0.75
20
7
9
11
T
C
= 25 °C
- 16
- 60
- 1.2
40
15
A
V
ns
nC
ns
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= - 6 V, R
L
= 0.6
I
D
- 10 A, V
GEN
= - 8 V, R
g
= 1
V
DD
= - 6 V, R
L
= 0.6
I
D
- 10 A, V
GEN
= - 4.5 V, R
g
= 1
f = 1 MHz
1.8
V
DS
= - 6 V, V
GS
= - 8 V, I
D
= - 14 A
V
DS
= - 6 V, V
GS
= - 4.5 V, I
D
= - 14 A
V
DS
= - 6 V, V
GS
= 0 V, f = 1 MHz
2520
570
545
48
29
4
6.6
9
25
25
90
50
10
10
120
45
18
50
50
180
100
20
20
240
90
ns
72
44
nC
pF
g
fs
V
GS
= - 6 V, I
D
= - 5 A
- 10
0.0105
0.0120
0.0155
0.0260
31
0.0130
0.0145
0.0195
0.0400
S
- 0.4
- 12
- 6.4
2.4
-1
±2
± 0.5
-1
- 10
A
μA
V
mV/°C
V
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes
a. Pulse test; pulse width
300 μs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S13-0107-Rev. A, 21-Jan-13
Document Number: 62816
2
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
SiA467EDJ
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
20.00
Vishay Siliconix
10
-2
10
-3
16.00
I
GSS
-
Gate
Current (mA)
12.00
I
GSS
-
Gate
Current (A)
10
-4
10
-5
10
-6
10
-7
10
-8
T
J
= 25
°C
T
J
= 150
°C
T
J
= 25
°C
8.00
4.00
0.00
0
4
8
12
16
10
-9
0
4
8
12
16
V
GS
-
Gate-Source
Voltage (V)
V
GS
-
Gate-to-Source
Voltage (V)
Gate Current vs. Gate-Source Voltage
60
Gate Current vs. Gate-to-Source Voltage
20
V
GS
= 5 V thru 3 V
V
GS
= 2.5 V
50
16
I
D
- Drain Current (A)
40
V
GS
= 2 V
30
I
D
- Drain Current (A)
12
8
20
V
GS
= 1.5 V
T
C
= 25
°C
T
C
= 125
°C
T
C
= - 55
°C
10
4
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
DS
- Drain-to-Source Voltage (V)
0
0.0
0.5
1.0
1.5
2.0
V
GS
-
Gate-to-Source
Voltage (V)
Output Characteristics
Transfer Characteristics
0.060
V
GS
= 1.8 V
0.050
R
DS(on)
- On-Resistance (Ω)
C - Capacitance (pF)
4000
3500
3000
C
iss
0.040
2500
2000
1500
1000
500
0
C
rss
C
oss
0.030
V
GS
= 2.5 V
0.020
V
GS
= 3.7 V
0.010
V
GS
= 4.5 V
0.000
0
10
20
30
40
50
60
0
2
4
6
8
10
12
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
S13-0107-Rev. A, 21-Jan-13
Capacitance
Document Number: 62816
3
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
SiA467EDJ
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Vishay Siliconix
8
R
DS(on)
- On-Resistance (Normalized)
1.4
V
GS
= 4.5 V, 2.5 V
I
D
= 5 A
V
GS
= 3.7 V
V
GS
-
Gate-to-Source
Voltage (V)
I
D
= 14 A
6
1.3
V
DS
= 6 V
1.2
V
GS
= 1.8 V
V
DS
= 3 V
4
V
DS
= 9.6 V
2
1.1
1.0
0.9
0
0
10
20
30
40
50
Q
g
- Total
Gate
Charge (nC)
0.8
- 50
- 25
0
25
50
75
100
125
150
T
J
- Junction Temperature (°C)
Gate Charge
100
On-Resistance vs. Junction Temperature
0.060
T
J
= 150
°C
10
T
J
= 25
°C
R
DS(on)
- On-Resistance (Ω)
I
S
-
Source
Current (A)
0.050
I
D
= 5 A
0.040
0.030
T
J
= 125
°C
T
J
= 25
°C
0.010
1
0.020
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
-
Source-to-Drain
Voltage (V)
0.000
0
1
2
3
4
5
V
GS
-
Gate-to-Source
Voltage (V)
Soure-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.8
30
0.7
25
0.6
20
Power (W)
75
100
125
150
V
GS(th)
(V)
0.5
15
I
D
= 250 μA
0.4
10
0.3
5
0.2
- 50
- 25
0
25
50
0
0.001
0.01
0.1
1
Time (s)
10
100
1000
T
J
- Temperature (°C)
Threshold Voltage
S13-0107-Rev. A, 21-Jan-13
Single Pulse Power, Junction-to-Ambient
Document Number: 62816
4
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
SiA467EDJ
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
Limited by R
DS(on)
*
Vishay Siliconix
10
I
D
- Drain Current (A)
100
µs
1 ms
1
10 ms
100 ms
10
s
1
s
T
A
= 25
°C
DC
BVDSS Limited
0.1
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is
specified
Safe Operating Area, Junction-to-Ambient
35
30
20
20
15
10
5
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Power Dissipation (W)
I
D
- Drain Current (A)
25
15
10
5
0
25
50
75
100
125
T
C
- Case Temperature (°C)
150
Current Derating*
Power Derating
* The power dissipation P
D
is based on T
J(max.)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S13-0107-Rev. A, 21-Jan-13
Document Number: 62816
5
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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