VS-10ETF10S-M3, VS-10ETF12S-M3 Series
www.vishay.com
Vishay Semiconductors
Surface Mount Fast Soft Recovery Rectifier Diode, 10 A
FEATURES
Base
cathode
+
2
2
1
3
1
Anode -
3
- Anode
• Glass passivated pellet chip junction
• Meets MSL level 1, per
LF maximum peak of 245 °C
• Designed and qualified
JEDEC
®
-JESD 47
J-STD-020,
to
according
D
2
PAK (TO-263AB)
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
APPLICATIONS
PRIMARY CHARACTERISTICS
I
F(AV)
V
R
V
F
at I
F
I
FSM
t
rr
T
J
max.
Snap factor
Package
Circuit configuration
D
2
PAK
10 A
1000 V, 1200 V
1.33 V
155 A
80 ns
150 °C
0.6
(TO-263AB)
Single
• Output rectification and
choppers and converters
freewheeling
in
inverters,
on
• Input rectifications where severe
conducted EMI should be met
restrictions
DESCRIPTION
The VS-10ETF..S-M3 fast soft recovery rectifier series has
been optimized for combined short reverse recovery time
and low forward voltage drop.
The glass passivation ensures stable reliable operation in
the most severe temperature and power cycling conditions.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
t
rr
T
J
10 A, T
J
= 25 °C
1 A, 100 A/μs
Range
CHARACTERISTICS
Sinusoidal waveform
VALUES
10
1000, 1200
155
1.33
80
-40 to +150
UNITS
A
V
A
V
ns
°C
VOLTAGE RATINGS
PART NUMBER
VS-10ETF10S-M3
VS-10ETF12S-M3
V
RRM
, MAXIMUM PEAK
REVERSE VOLTAGE
V
1000
1200
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
1100
1300
I
RRM
AT 150 °C
mA
4
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
Maximum peak one cycle non-repetitive
surge current
Maximum I
2
t for fusing
Maximum I
2
t
for fusing
SYMBOL
I
F(AV)
I
FSM
I
2
t
I
2
t
TEST CONDITIONS
T
C
= 125 °C, 180° conduction half sine wave
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
VALUES
10
130
155
85
120
1200
A
2
s
A
2
s
A
UNITS
Revision: 04-Jan-18
Document Number: 94885
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-10ETF10S-M3, VS-10ETF12S-M3 Series
www.vishay.com
Vishay Semiconductors
SYMBOL
V
FM
r
t
V
F(TO)
I
RM
TEST CONDITIONS
10 A, T
J
= 25 °C
T
J
= 150 °C
T
J
= 25 °C
T
J
= 150 °C
V
R
= rated V
RRM
VALUES
1.33
22.9
0.96
0.1
4
UNITS
V
m
V
mA
ELECTRICAL SPECIFICATIONS
PARAMETER
Maximum forward voltage drop
Forward slope resistance
Threshold voltage
Maximum reverse leakage current
RECOVERY CHARACTERISTICS
PARAMETER
Reverse recovery time
Reverse recovery current
Reverse recovery charge
Typical snap factor
SYMBOL
t
rr
I
rr
Q
rr
S
TEST CONDITIONS
I
F
at 10 A
pk
25 A/μs
25 °C
VALUES
310
4.7
1.05
0.6
UNITS
ns
A
μC
dir
dt
I
FM
t
rr
t
Q
rr
I
RM(REC)
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
junction to ambient (PCB mount)
Approximate weight
Marking device
Case style D
2
PAK (TO-263AB)
SYMBOL
T
J
, T
Stg
R
thJC
R
thJA
(1)
TEST CONDITIONS
VALUES
-40 to +150
UNITS
°C
DC operation
1.5
°C/W
62
2
0.07
10ETF10S
10ETF12S
g
oz.
Note
(1)
When mounted on 1" square (650 mm
2
) PCB of FR-4 or G-10 material 4 oz. (140 μm) copper 40 °C/W.
For recommended footprint and soldering techniques refer to application note #AN-994
Revision: 04-Jan-18
Document Number: 94885
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-10ETF10S-M3, VS-10ETF12S-M3 Series
www.vishay.com
Vishay Semiconductors
24
150
Maximum Allowable Case
Temperature (°C)
145
140
Maximum Average Forward
Power Loss (W)
10ETF.. Series
R
thJC
(DC) = 1.5 °C/W
20
16
12
Ø
135
130
125
120
30°
115
0
2
4
6
Conduction angle
DC
180°
120°
90°
60°
30°
RMS limit
8
4
0
Ø
Conduction period
10ETF.. Series
T
J
= 150 °C
0
2
4
6
8
10
12
14
16
60° 90° 120° 180°
8
10
12
Average Forward Current (A)
Fig. 1 - Current Rating Characteristics
Average Forward Current (A)
Fig. 4 - Forward Power Loss Characteristics
150
140
10ETF.. Series
R
thJC
(DC) = 1.5 °C/W
130
At any rated load condition and with
rated Vrrm applied following
surge.
Initial Tj = 150°C
at 60 Hz 0.0083s
at 50 Hz 0.0100s
Maximum Allowable Case
Temperature (°C)
145
140
135
130
30°
125
120
115
0
2
4
6
60°
Peak Half Sine Wave
Forward Current (A)
120
110
100
90
80
70
60
50
Ø
Conduction period
90°
120°
180°
8
10
12
DC
14
16
VS-10ETF..S
Series
40
30
1
10
100
Average Forward Current (A)
Fig. 2 - Current Rating Characteristics
Number of Equal Amplitude Half Cycle
Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
16
170
180°
120°
90°
60°
30°
RMS limit
150
Maximum non-repetitive
surge
current
versus pulse train duration.
Initial Tj = Tj max.
No voltage reapplied
Rated Vrrm reapplied
Maximum Average Forward
Power Loss (W)
14
12
10
8
6
4
2
0
0
2
Peak Half Sine Wave
Forward Current (A)
130
110
90
70
50
30
10
0.01
Ø
Conduction angle
10ETF.. Series
T
J
= 150 °C
4
6
8
10
VS-10ETF..S
Series
0.1
1
10
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Revision: 04-Jan-18
Document Number: 94885
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-10ETF10S-M3, VS-10ETF12S-M3 Series
www.vishay.com
1000
T
J
= 150 °C
T
J
= 25 °C
100
2.0
10ETF.. Series
T
J
= 25 °C
I
FM
= 10 A
Vishay Semiconductors
Instantaneous Forward Current (A)
Q
rr
- Typical Reverse
Recovery Charge (µC)
1.6
I
FM
= 8 A
1.2
I
FM
= 5 A
0.8
I
FM
= 2 A
0.4
I
FM
= 1 A
10
10ETF.. Series
1
0.5
0
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0
40
80
120
160
200
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 10 - Recovery Charge Characteristics, T
J
= 25 °C
0.6
0.5
10ETF.. Series
T
J
= 25 °C
I
FM
= 10 A
I
FM
= 8 A
I
FM
= 5 A
I
FM
= 2 A
I
FM
= 1 A
5
10ETF.. Series
T
J
= 150 °C
I
FM
= 10 A
0.4
0.3
0.2
0.1
0
0
40
80
120
Q
rr
- Typical Reverse
Recovery Charge (µC)
t
rr
- Typical Reverse
Recovery Time (µs)
4
3
I
FM
= 8 A
I
FM
= 5 A
I
FM
= 2 A
I
FM
= 1 A
2
1
0
160
200
0
40
80
120
160
200
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 8 - Recovery Time Characteristics, T
J
= 25 °C
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 11 - Recovery Charge Characteristics, T
J
= 150 °C
0.8
10ETF.. Series
T
J
= 150 °C
0.6
I
FM
= 10 A
I
FM
= 8 A
I
FM
= 5 A
I
FM
= 2 A
I
FM
= 1 A
20
10ETF.. Series
T
J
= 25 °C
I
FM
= 10 A
I
FM
= 8 A
12
I
FM
= 5 A
I
FM
= 2 A
I
FM
= 1 A
4
0.4
I
rr
- Typical Reverse
Recovery Current (A)
200
t
rr
- Typical Reverse
Recovery Time (µs)
16
8
0.2
0
0
40
80
120
160
0
0
40
80
120
160
200
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 9 - Recovery Time Characteristics, T
J
= 150 °C
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 12 - Recovery Current Characteristics, T
J
= 25 °C
Revision: 04-Jan-18
Document Number: 94885
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-10ETF10S-M3, VS-10ETF12S-M3 Series
www.vishay.com
25
10ETF.. Series
T
J
= 150 °C
I
FM
= 10 A
Vishay Semiconductors
I
rr
- Typical Reverse
Recovery Current (A)
20
I
FM
= 8 A
15
I
FM
= 5 A
I
FM
= 2 A
10
I
FM
= 1 A
5
0
0
40
80
120
160
200
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 13 - Recovery Current Characteristics, T
J
= 150 °C
Z
thJC
- Transient Thermal Impedance (°C/W)
10
Steady state value
(DC operation)
1
0.1
0.01
Single pulse
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
10ETF.. Series
0.001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 14 - Thermal Impedance Z
thJC
Characteristics
Revision: 04-Jan-18
Document Number: 94885
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
微控制器 MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
