74HC374D
CMOS Digital Integrated Circuits
Silicon Monolithic
74HC374D
1. Functional Description
•
Octal D-Type Flip Flop with 3-State Outputs
2. General
The 74HC374D is a high speed CMOS OCTAL FLIP-FLOP with 3-STATE OUTPUT fabricated with silicon gate
C
2
MOS technology.
It achieves the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power
dissipation.
These 8-bit D-type flip-flops are controlled by a clock input (CK) and an output enable input (OE).
When the input is high, the eight outputs are in a high impedance state.
All inputs are equipped with protection circuits against static discharge or transient excess voltage.
3. Features
(1)
(2)
(3)
(4)
High speed: f
MAX
= 90 MHz (typ.) at V
CC
= 6.0 V
Low power dissipation: I
CC
= 4.0
µA
(max) at T
a
= 25
Balanced propagation delays: t
PLH
≈
t
PHL
Wide operating voltage range: V
CC(opr)
= 2.0 V to 6.0 V
4. Packaging
SOIC20
Start of commercial production
©2016 Toshiba Corporation
1
2016-03
2016-08-04
Rev.3.0
74HC374D
5. Pin Assignment
6. Marking
7. IEC Logic Symbol
©2016 Toshiba Corporation
2
2016-08-04
Rev.3.0
74HC374D
8. Truth Table
X:
Z:
Qn:
Don't care
High impedance
No change
9. System Diagram
©2016 Toshiba Corporation
3
2016-08-04
Rev.3.0
74HC374D
10. Absolute Maximum Ratings (Note)
Characteristics
Supply voltage
Input voltage
Output voltage
Input diode current
Output diode current
Output current
V
CC
/ground current
Power dissipation
Storage temperature
Symbol
V
CC
V
IN
V
OUT
I
IK
I
OK
I
OUT
I
CC
P
D
T
stg
(Note 1)
Note
Rating
-0.5 to 7.0
-0.5 to V
CC
+ 0.5
-0.5 to V
CC
+ 0.5
±20
±20
±35
±75
500
-65 to 150
Unit
V
V
V
mA
mA
mA
mA
mW
Note:
Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even
destruction.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Note 1: PD derates linearly with -8 mW/ above 85
11. Operating Ranges (Note)
Characteristics
Supply voltage
Input voltage
Output voltage
Operating temperature
Input rise and fall times
Symbol
V
CC
V
IN
V
OUT
T
opr
t
r
,t
f
Test Condition
Rating
2.0 to 6.0
0 to V
CC
0 to V
CC
-40 to 125
0 to 50
Unit
V
V
V
µs
Note:
The operating ranges must be maintained to ensure the normal operation of the device.
Unused inputs must be tied to either V
CC
or GND.
©2016 Toshiba Corporation
4
2016-08-04
Rev.3.0
74HC374D
12. Electrical Characteristics
12.1. DC Characteristics (Unless otherwise specified, T
a
= 25
)
Characteristics
High-level input voltage
Symbol
V
IH
Test Condition
V
CC
(V)
2.0
4.5
6.0
Low-level input voltage
V
IL
2.0
4.5
6.0
High-level output voltage
V
OH
V
IN
= V
IH
or V
IL
I
OH
= -20
µA
2.0
4.5
6.0
I
OH
= -6 mA
I
OH
= -7.8 mA
Low-level output voltage
V
OL
V
IN
= V
IH
or V
IL
I
OL
= 20
µA
4.5
6.0
2.0
4.5
6.0
I
OL
= 6 mA
I
OL
= 7.8 mA
3-state output OFF-state
leakage current
Input leakage current
Quiescent supply current
I
OZ
I
IN
I
CC
V
IN
= V
IH
or V
IL
V
OUT
= V
CC
or GND
V
IN
= V
CC
or GND
V
IN
= V
CC
or GND
I
O
= 0 A
4.5
6.0
6.0
6.0
6.0
Min
1.50
3.15
4.20
1.9
4.4
5.9
4.18
5.68
Typ.
2.0
4.5
6.0
4.31
5.80
0.0
0.0
0.0
0.17
0.18
Max
0.50
1.35
1.80
0.1
0.1
0.1
0.26
0.26
±0.5
±0.1
4.0
µA
µA
µA
V
V
V
Unit
V
12.2. DC Characteristics (Unless otherwise specified, T
a
= -40 to 85
)
Characteristics
High-level input voltage
Symbol
V
IH
Test Condition
V
CC
(V)
2.0
4.5
6.0
Low-level input voltage
V
IL
2.0
4.5
6.0
High-level output voltage
V
OH
V
IN
= V
IH
or V
IL
I
OH
= -20
µA
2.0
4.5
6.0
I
OH
= -6 mA
I
OH
= -7.8 mA
Low-level output voltage
V
OL
V
IN
= V
IH
or V
IL
I
OL
= 20
µA
4.5
6.0
2.0
4.5
6.0
I
OL
= 6 mA
I
OL
= 7.8 mA
3-state output OFF-state leakage
current
Input leakage current
Quiescent supply current
I
OZ
I
IN
I
CC
V
IN
= V
IH
or V
IL
V
OUT
= V
CC
or GND
V
IN
= V
CC
or GND
V
IN
= V
CC
or GND
I
O
= 0 A
4.5
6.0
6.0
6.0
6.0
Min
1.50
3.15
4.20
1.9
4.4
5.9
4.13
5.63
Max
0.50
1.35
1.80
0.1
0.1
0.1
0.33
0.33
±5.0
±1.0
40.0
µA
µA
µA
V
V
V
Unit
V
©2016 Toshiba Corporation
5
2016-08-04
Rev.3.0
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