VS-SD1053C..L Series
www.vishay.com
Vishay Semiconductors
Fast Recovery Diodes
(Hockey PUK Version), 920 A, 1050 A
FEATURES
• High power fast recovery diode series
• 2.0 μs to 3.0 μs recovery time
• High voltage ratings up to 3000 V
• High current capability
• Optimized turn-on and turn-off characteristics
• Low forward recovery
• Fast and soft reverse recovery
• Press PUK encapsulation
B-PUK (DO-200AB)
• Case style conform to JEDEC
®
B-PUK (DO-200AB)
• Maximum junction temperature 150 °C
• Designed and qualified for industrial level
PRIMARY CHARACTERISTICS
I
F(AV)
Package
Circuit configuration
920 A, 1050 A
B-PUK (DO-200AB)
Single
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• Snubber diode for GTO
• High voltage freewheeling diode
• Fast recovery rectifier applications
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
I
F(AV)
I
F(RMS)
I
FSM
V
RRM
t
rr
T
J
50 Hz
60 Hz
Range
T
J
TEST CONDITIONS
SD1053C..L
S20
1050
T
hs
55
1940
15 000
15 700
1800 to 2500
2.0
25
-40 to +150
S30
920
55
1700
13 000
13 610
1800 to 3000
3.0
V
μs
°C
A
UNITS
A
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
18
VS-SD1053C..S20L
22
24
25
18
22
VS-SD1053C..S30L
25
28
30
V
RRM
, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
1800
2200
2400
2500
1800
2200
2500
2800
3000
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
1900
2300
2500
2600
1900
2300
2600
2900
3100
50
I
RRM
MAXIMUM
AT T
J
= T
J
MAXIMUM
mA
Revision: 11-Jan-18
Document Number: 93167
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-SD1053C..L Series
www.vishay.com
Vishay Semiconductors
SD1053C..L
UNITS
S20
S30
1050 (450) 920 (390)
A
55 (85)
55 (85)
°C
1940
1700
15 000
13 000
15 700
13 610
A
12 620
10 930
13 210
11 450
1125
845
1027
772
kA
2
s
796
598
727
546
11 250
8450
kA
2
s
1.34
1.51
V
1.48
1.67
0.37
0.33
1.90
0.50
m
r
f2
V
FM
(I >
x I
F(AV)
), T
J
= T
J
maximum
I
pk
= 1500 A, T
J
= T
J
maximum,
t
p
= 10 ms sinusoidal wave
0.45
2.26
V
FORWARD CONDUCTION
PARAMETER
Maximum average forward current
at heatsink temperature
Maximum RMS forward current
Maximum peak, one-cycle forward,
non-repetitive surge current
SYMBOL
I
F(AV)
I
F(RMS)
TEST CONDITIONS
180° conduction, half sine wave
Double side (single side) cooled
25 °C heatsink temperature double side cooled
t = 10 ms
No voltage
reapplied
t = 8.3 ms
t = 10 ms
100 % V
RRM
reapplied
t = 8.3 ms
Sinusoidal half wave,
initial T
J
= T
J
maximum
t = 10 ms
No voltage
reapplied
t = 8.3 ms
t = 10 ms
100 % V
RRM
reapplied
t = 8.3 ms
t = 0.1 to 10 ms, no voltage reapplied
(16.7 % x
x I
F(AV)
< I <
x I
F(AV)
), T
J
= T
J
maximum
(I >
x I
F(AV)
), T
J
= T
J
maximum
(16.7 % x
x I
F(AV)
< I <
x I
F(AV)
), T
J
= T
J
maximum
I
FSM
Maximum I
2
t for fusing
I
2
t
Maximum I
2
t
for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forward
slope resistance
High level value of forward
slope resistance
Maximum forward voltage drop
I
2
t
V
F(TO)1
V
F(TO)2
r
f1
RECOVERY CHARACTERISTICS
MAXIMUM VALUE
AT T
J
= 25 °C
CODE
t
rr
AT 25 % I
RRM
(μs)
2.0
3.0
TEST CONDITIONS
I
pk
SQUARE
PULSE
(A)
1000
dI/dt
(A/μs)
100
V
r
(V)
- 50
TYPICAL VALUES
AT T
J
= 150 °C
I
FM
t
rr
AT 25 % I
RRM
(μs)
4.0
4.5
Q
rr
(μC)
400
550
I
rr
(A)
180
230
dir
dt
t
rr
t
Q
rr
I
RM(REC)
S20
S30
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction operating
and storage temperature range
Maximum thermal resistance,
case junction to heatsink
Mounting force, ± 10 %
Approximate weight
Case style
SYMBOL
T
J
, T
Stg
R
thJ-hs
DC operation single side cooled
DC operation double side cooled
TEST CONDITIONS
VALUES
-40 to 150
UNITS
°C
See dimensions - link at the end of datasheet
0.073
K/W
0.031
14 700 (1500)
N (kg)
255
g
B-PUK (DO-200AB)
R
thJ-hs
CONDUCTION
CONDUCTION ANGLE
180°
120°
90°
60°
30°
SINUSOIDAL CONDUCTION
SINGLE SIDE
0.009
0.011
0.014
0.020
0.036
DOUBLE SIDE
0.008
0.011
0.014
0.021
0.036
RECTANGULAR CONDUCTION
SINGLE SIDE
0.006
0.011
0.015
0.021
0.036
DOUBLE SIDE
0.006
0.011
0.015
0.022
0.036
TEST CONDITIONS
UNITS
T
J
= T
J
maximum
K/W
Note
• The table above shows the increment of thermal resistance R
thJ-hs
when devices operate at different conduction angles than DC
Revision: 11-Jan-18
Document Number: 93167
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-SD1053C..L Series
www.vishay.com
Vishay Semiconductors
Maximum Allowable Heatsink T
emperature (°C)
160
140
120
100
Conduc tion Period
Maximum Allowable Heatsink T
emperature (°C)
160
140
120
S
D1053C..S
20L S
eries
(S
ingle S
ide Cooled)
R
thJ-hs
(DC) = 0.073 K/ W
S
D1053C..S
30L S
eries
(S
ingle S
ide Cooled)
R
thJ-hs
(DC) = 0.073 K/ W
Conduction Angle
100
80
60
40
0
100
200
300
400
500
600
700
Average Forward Current (A)
180°
90°
120°
80
60
40
20
0
0
200
400
600
800
1000
Average Forward Current (A)
30°
60°
90°
120°
180°
DC
30°
60°
Fig. 1 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
Maximum Allowable Heatsink T
emperature (°C)
160
140
120
100
Conduction Period
Maximum Allowable Heatsink T
emperature (°C)
160
140
120
100
S
D1053C..S
20L S
eries
(S
ingle S
ide Cooled)
R
thJ-hs
(DC) = 0.073 K/ W
S
D1053C..S
20L S
eries
(Double S Cooled)
ide
R
thJ-hs
(DC) = 0.031 K/ W
Conduction Angle
80
60
40
20
0
0
200
400
600
800 1000 1200 1400
Average Forward Current (A)
30°
60°
80
60
40
20
0
200
400
600
800
1000 1200
Average Forward Current (A)
30°
60°
90°
120°
180° DC
90°
120° 180°
Fig. 2 - Current Ratings Characteristics
Fig. 5 - Current Ratings Characteristics
Maximum Allowable Heatsink Temp erature (°C)
160
140
120
100
80
60
40
20
0
100
200
Maximum Allowable Heats T
ink emperature (°C)
S
D1053C..S
30L S
eries
(S
ingle S
ide Cooled)
R
thJ-hs
(DC) = 0.073 K/ W
160
140
120
100
80
60
40
20
0
0
400
30°
S
D1053C..S
20L S
eries
(Double S Cooled)
ide
R
thJ-hs
(DC) = 0.031 K/ W
Conduction Angle
Conduction Period
60°
90°
30°
120°
60°
180°
DC
90°
120°
180°
300
400
500
600
800
1200
1600
2000
Average Forward Current (A)
Average Forward Current (A)
Fig. 3 - Current Ratings Characteristics
Fig. 6 - Current Ratings Characteristics
Revision: 11-Jan-18
Document Number: 93167
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-SD1053C..L Series
www.vishay.com
Vishay Semiconductors
Maximum Average Forward Power Loss (W)
4500
4000
3500
3000
2500
2000
1500
1000
500
0
0
400
800
1200
1600
2000
Average Forward Current (A)
S
D1053C..S
20L S
eries
T
J
= 150°C
DC
180°
120°
90°
60°
30°
RMSLimit
Conduction Period
Maximum Allowable Heatsink T
emperature (°C)
160
140
120
100
S
D1053C..S
30L S
eries
(Double S Cooled)
ide
R
thJ-hs
(DC) = 0.031 K/ W
Conduction Angle
80
60
40
20
30°
0
0
200
400
600
800
1000 1200
Average Forward Current (A)
60°
90° 120°
180°
Fig. 7 - Current Ratings Characteristics
Fig. 10 - Forward Power Loss Characteristics
Maximum Allowable Heatsink T
emperature (°C)
140
120
100
80
30°
60
40
20
60°
S
D1053C..S
30L S
eries
(Double S Cooled)
ide
R
thJ-hs
(DC) = 0.031 K/ W
Maximum Average F
orward Power Loss (W)
160
3200
2800
2400
2000
1600
1200
Conduction Angle
180°
120°
90°
60°
30°
RMS Limit
Conduction Period
90°
120°
180°
DC
0
0
400
800
1200
1600
2000
Average Forward Current (A)
800
400
0
0
200
400
600
800
1000 1200
Average Forward Current (A)
S
D1053C..S
30L S
eries
T = 150°C
J
Fig. 8 - Current Ratings Characteristics
Fig. 11 - Forward Power Loss Characteristics
Maximum Average F
orward Power Los (W)
s
Maximum Average F
orward P
ower Loss (W)
3500
3000
2500
2000
1500
1000
500
0
0
200
400
600 800 1000 1200 1400
Average Forward Current (A)
Conduction Angle
4500
4000
3500
3000
2500
RMS Limit
2000
1500
1000
500
0
0
400
800
1200
1600
2000
Average Forward Current (A)
Conduction Period
180°
120°
90°
60°
30°
RMSLimit
DC
180°
120°
90°
60°
30°
S
D1053C..S
20L S
eries
T = 150°C
J
S
D1053C..S
30L S
eries
T = 150°C
J
Fig. 9 - Forward Power Loss Characteristics
Fig. 12 - Forward Power Loss Characteristics
Revision: 11-Jan-18
Document Number: 93167
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-SD1053C..L Series
www.vishay.com
Vishay Semiconductors
Peak Half S Wave Forward Current (A)
ine
13000
12000
11000
10000
9000
8000
7000
6000
5000
4000
3000
0.01
S
D1053C..S
30L S
eries
0.1
Pulse T
rain Dura tion (s)
1
Maximum Non R
epetitive S e Current
urg
Versus Pulse T
rain Duration.
Initial T = 150 °C
J
No Voltag e Reapplied
Rated V
RRM
Reapplied
Peak Half S Wave Forward Current (A)
ine
14000
13000
12000
11000
10000
9000
8000
7000
6000
5000
4000
1
At Any Rated Load Condition And With
Rated V
RRM
Applied Following S
urge.
Initial T = 150 °C
J
@60 Hz 0.0083 s
@50 Hz 0.0100 s
S
D1053C..S
20L S
eries
10
100
Number Of Equa l Amplitude Half Cycle Current Pulses (N)
Fig. 13 - Maximum Non-Repetitive Surge Current
Fig. 16 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Peak Half S Wave F
ine
orward Current (A)
16000
Instantaneous Forward Current (A)
Maximum Non R
epetitive S
urge Current
Versus Pulse T
rain Duration.
14000
Initial T = 150 °C
J
No Voltage Reapplied
12000
Rated V
RRM
Reapplied
10000
8000
6000
4000
2000
0.01
S
D1053C..S
20L S
eries
10000
T = 25°C
J
T = 150°C
J
1000
S
D1053C..S
20L S
eries
100
0.1
Pulse T
rain Duration (s)
1
1
1.5
2
2.5
3
3.5
4
4.5
5
Instantaneous Forward Voltage (V)
Fig. 14 - Maximum Non-Repetitive Surge Current
Fig. 17 - Forward Voltage Drop Characteristics
Peak Half S Wave Forward Current (A)
ine
12000
11000
10000
9000
8000
7000
6000
5000
4000
3000
1
10000
Instantaneous Forward Current (A)
At Any Rated Load Condition And With
Rated V
RRM
Applied Following S
urge.
Initial T = 150°C
J
@60 Hz 0.0083 s
@50 Hz 0.0100 s
T = 25°C
J
T = 150°C
J
1000
S
D1053C..S
30L S
eries
10
100
S
D1053C..S
30L S
eries
100
1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5
Ins
tantaneous Forward Voltage (V)
Number Of Equa l Amplitude Half Cyc le Current Pulses (N)
Fig. 15 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 18 - Forward Voltage Drop Characteristics
Revision: 11-Jan-18
Document Number: 93167
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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