RF JFET Transistors Low Noise HJ FET
参数名称 | 属性值 |
Product Attribute | Attribute Value |
制造商 Manufacturer | NEC ( Renesas ) |
产品种类 Product Category | RF JFET Transistors |
RoHS | Details |
Transistor Type | HFET |
技术 Technology | GaAs |
Gain | 13.5 dB |
Transistor Polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 4 V |
Vgs - Gate-Source Breakdown Voltage | - 3 V |
Id - Continuous Drain Current | 70 mA |
最大工作温度 Maximum Operating Temperature | + 150 C |
Pd-功率耗散 Pd - Power Dissipation | 165 mW |
安装风格 Mounting Style | SMD/SMT |
封装 / 箱体 Package / Case | Micro-X |
系列 Packaging | Tube |
Operating Frequency | 20 GHz |
产品 Product | RF JFET |
类型 Type | GaAs HFET |
Forward Transconductance - Min | 40 mS |
NF - Noise Figure | 0.7 dB |
NE350184C-A | NE34018-T1-64-A | |
---|---|---|
描述 | RF JFET Transistors Low Noise HJ FET | RF JFET Transistors L-S Band Lo No Amp |
Product Attribute | Attribute Value | Attribute Value |
制造商 Manufacturer |
NEC ( Renesas ) | NEC ( Renesas ) |
产品种类 Product Category |
RF JFET Transistors | RF JFET Transistors |
RoHS | Details | Details |
Transistor Type | HFET | HFET |
技术 Technology |
GaAs | GaAs |
Gain | 13.5 dB | 16 dB |
Transistor Polarity | N-Channel | N-Channel |
Vds - Drain-Source Breakdown Voltage | 4 V | 4 V |
Vgs - Gate-Source Breakdown Voltage | - 3 V | - 3 V |
Id - Continuous Drain Current | 70 mA | 120 mA |
最大工作温度 Maximum Operating Temperature |
+ 150 C | + 125 C |
Pd-功率耗散 Pd - Power Dissipation |
165 mW | 150 mW |
安装风格 Mounting Style |
SMD/SMT | SMD/SMT |
封装 / 箱体 Package / Case |
Micro-X | SOT-343 |
Operating Frequency | 20 GHz | 2 GHz |
产品 Product |
RF JFET | RF JFET |
类型 Type |
GaAs HFET | GaAs HFET |
Forward Transconductance - Min | 40 mS | 30 mS |
NF - Noise Figure | 0.7 dB | 0.6 dB |
系列 Packaging |
Tube | Reel |
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