AUTOMOTIVE GRADE
Features
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
Description
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per
silicon area. Additional features of this design are a
175°C junction operating temperature, fast switching
speed and improved repetitive avalanche rating. These
features combine to make this design an extremely
efficient and reliable device for use in Automotive
applications and wide variety of other applications.
Base Part Number
AUIRF3805L-7P
AUIRF3805S-7P
Absolute Maximum Ratings
Package Type
TO-263-7PIN
D
2
Pak-7PIN
AUIRF3805S-7P
AUIRF3805L-7P
V
DSS
R
DS(on)
typ.
max.
I
D
55V
2.0m
2.6m
240A
D
2
Pak 7 Pin
AUIRF3805S-7P
TO-263CA 7 Pin
AUIRF3805L-7P
G
Gate
D
Drain
S
Source
Standard Pack
Form
Quantity
Tube
50
Tube
50
Tape and Reel Left
800
Complete Part Number
AUIRF3805L-7P
AUIRF3805S-7P
AUIRF3805S-7TRL
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
E
AS (tested)
I
AR
E
AR
dv/dt
T
J
T
STG
Parameter
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V (Package Limited)
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Max.
240
170
160
1000
300
2.0
± 20
440
680
See Fig.12a,12b,15,16
2.3
-55 to + 175
300
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Symbol
R
JC
R
CS
R
JA
R
JA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient (PCB Mount, steady state)
Typ.
–––
0.50
–––
–––
Max.
0.50
–––
62
40
Units
°C/W
HEXFET® is a registered trademark of Infineon.
*Qualification
standards can be found at
www.infineon.com
1
2017-10-09
AUIRF3805S/L-7P
Static Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
55
–––
–––
V V
GS
= 0V, I
D
= 250µA
––– 0.05 ––– V/°C Reference to 25°C, I
D
= 1.0mA
V
(BR)DSS
/T
J
Breakdown Voltage Temp. Coefficient
–––
2.0
2.6
R
DS(on)
SMD Static Drain-to-Source On-Resistance
m V
GS
= 10V, I
D
= 140A
V
GS(th)
Gate Threshold Voltage
2.0
–––
4.0
V V
DS
= V
GS
, I
D
= 250µA
gfs
Forward Transconductance
110
–––
–––
S V
DS
= 25V, I
D
= 140A
–––
–––
20
V
DS
= 55V, V
GS
= 0V
Drain-to-Source Leakage Current
µA
I
DSS
–––
–––
250
V
DS
= 55V, V
GS
= 0V, T
J
= 125°C
Gate-to-Source Forward Leakage
–––
–––
200
V
GS
= 20V
nA
I
GSS
Gate-to-Source Reverse Leakage
–––
––– -200
V
GS
= -20V
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
Q
g
Total Gate Charge
–––
130
200
I
D
= 140A
Q
gs
Gate-to-Source Charge
–––
53
–––
nC
V
DS
= 44V
V
GS
= 10V
Q
gd
Gate-to-Drain ("Miller") Charge
–––
49
–––
t
d(on)
Turn-On Delay Time
–––
23
–––
V
DD
= 28V
I
D
= 140A
t
r
Rise Time
–––
130
–––
ns
t
d(off)
Turn-Off Delay Time
–––
80
–––
R
G
= 2.4
V
GS
= 10V
Fall Time
–––
52
–––
t
f
Between lead,
Internal Drain Inductance
–––
4.5
–––
L
D
6mm (0.25in.)
nH
from package
L
S
Internal Source Inductance
–––
7.5
–––
and center of die contact
C
iss
Input Capacitance
––– 7820 –––
V
GS
= 0V
V
DS
= 25V
C
oss
Output Capacitance
––– 1260 –––
C
rss
Reverse Transfer Capacitance
–––
610
–––
pF ƒ = 1.0 MHz, See Fig. 5
C
oss
Output Capacitance
––– 4310 –––
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
C
oss
Output Capacitance
980
V
GS
= 0V, V
DS
= 44V, ƒ = 1.0MHz
C
oss
eff.
Effective Output Capacitance
––– 1540 –––
V
GS
= 0V, V
DS
= 0V to 44V
Diode Characteristics
Symbol
Parameter
Min. Typ. Max. Units
Conditions
Continuous Source Current
MOSFET symbol
I
S
–––
–––
240
(Body Diode)
showing the
A
integral reverse
Pulsed Source Current
I
SM
–––
–––
1000
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
–––
–––
1.3
V T
J
= 25°C, I
S
= 140A, V
GS
= 0V
–––
45
68
t
rr
Reverse Recovery Time
ns T
J
= 25°C, I
F
= 140A, V
DD
= 28V
–––
35
53
Q
rr
Reverse Recovery Charge
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
t
on
Forward Turn-On Time
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
This value determined from sample failure
population starting T
J
= 25°C, L=0.043mH,
R
G
= 25, I
AS
= 140A,V
GS
=10V.
Pulse width
1.0ms; duty cycle
2%.
Coss eff. is a fixed capacitance that gives the same
charging time as Coss while V
DS
is rising from 0 to
80% V
DSS
.
This is applied to D
2
Pak, when mounted on 1" square PCB
( FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
R
is measured at T
J
of approximately 90°C.
Solder mounted on IMS substrate.
Limited by T
Jmax
starting T
J
= 25°C, L=0.043mH,
R
G
= 25, I
AS
= 140A,V
GS
=10V.Part not recommended for use above
this value.
2
2017-10-09
AUIRF3805S/L-7P
10000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
10000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
1000
1000
BOTTOM
100
4.5V
10
10
1
4.5V
60µs PULSE WIDTH
0.1
0.1
1
Tj = 25°C
10
100
1000
1
0.1
1
60µs PULSE WIDTH
Tj = 175°C
10
100
1000
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Fig. 1
Typical Output Characteristics
Fig. 2
Typical Output Characteristics
1000
250
Gfs, Forward Transconductance (S)
T J = 25°C
200
ID, Drain-to-Source Current
)
100
T J = 175°C
150
T J = 175°C
10
T J = 25°C
100
50
VDS = 25V
60µs
PULSE WIDTH
1.0
2
4
6
8
10
V DS = 10V
380µs PULSE WIDTH
0
0
20
40
60
80
100
120
ID ,Drain-to-Source Current (A)
VGS, Gate-to-Source Voltage (V)
Fig. 3
Typical Transfer Characteristics
Fig. 4
Typical Forward Transconductance
vs. Drain Current
3
2017-10-09
AUIRF3805S/L-7P
100000
12.0
VGS = 0V,
f = 1 MHZ
C iss = Cgs + Cgd, C ds SHORTED
C rss = Cgd
C oss = Cds + Cgd
ID= 140A
VGS, Gate-to-Source Voltage (V)
10.0
8.0
6.0
4.0
2.0
0.0
VDS = 64V
VDS = 40V
C, Capacitance(pF)
10000
C iss
Coss
1000
C rss
100
1
10
VDS, Drain-to-Source Voltage (V)
100
0
50
100
150
QG Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs.
Gate-to-Source Voltage
10000
10000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
1msec
ISD, Reverse Drain Current (A)
1000
T J = 175°C
100
T J = 25°C
ID, Drain-to-Source Current (A)
1000
100
10msec
DC
1
Tc = 25°C
Tj = 175°C
Single Pulse
1
10
VDS, Drain-to-Source Voltage (V)
100
10
10
1
VGS = 0V
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
VSD, Source-to-Drain Voltage (V)
0.1
Fig. 7
Typical Source-to-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
2017-10-09
AUIRF3805S/L-7P
250
R DS(on) , Drain-to-Source On Resistance
(Normalized)
2.5
ID = 140A
2.0
VGS = 10V
200
ID, Drain Current (A)
150
1.5
100
1.0
50
0
25
50
75
100
125
150
175
T C , Case Temperature (°C)
0.5
-60 -40 -20 0 20 40 60 80 100 120 140160 180
T J , Junction Temperature (°C)
Fig 9.
Maximum Drain Current vs.
Case Temperature
Fig 10.
Normalized On-Resistance
vs. Temperature
1
Thermal Response ( Z thJC )
D = 0.50
0.1
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
J
J
1
R
1
R
1
2
R
2
R
2
R
3
R
3
C
1
2
3
3
C
Ri (°C/W)
0.0794
0.1474
0.2737
i
(sec)
0.000192
0.000628
0.014012
0.01
Ci=
iRi
Ci=
iRi
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-005
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
5
2017-10-09
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