BULK128
High voltage fast-switching
NPN power transistor
Features
■
■
■
High voltage capability
Minimum lot-to-lot spread for reliable operation
Very high switching speed
Applications
■
Electronic ballast for fluorescent lighting
Description
The device is manufactured using high voltage
multi-epitaxial planar technology for high
switching speeds and medium voltage capability.
It uses a cellular emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA. The device is
designed for use in lighting applications and low
cost switch-mode power supplies.
Figure 1.
bs
O
et
l
o
ro
P
e
uc
d
s)
t(
O
-
so
b
te
le
ro
P
SOT-82
1
uc
d
2
3
s)
t(
Internal schematic diagram
Table 1.
Device summary
Marking
BULK128
Package
SOT-82
Packaging
Tube
Order code
BULK128
June 2008
Rev 2
1/11
www.st.com
11
Contents
BULK128
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
........................ 5
3
4
5
Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
bs
O
et
l
o
ro
P
e
uc
d
s)
t(
O
-
so
b
te
le
ro
P
uc
d
s)
t(
2/11
BULK128
Electrical ratings
1
Electrical ratings
Table 2.
Symbol
V
CES
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
T
stg
T
J
Absolute maximum rating
Parameter
Collector-emitter voltage (V
BE
= 0)
Collector-emitter voltage (I
B
= 0)
Emitter-base voltage (I
C
= 0, I
B
= 2 A, t
p
< 10
µs)
Collector current
Collector peak current (t
P
< 5ms)
Base current
Base peak current (t
P
< 5ms)
Total dissipation at T
c
= 25°C
Storage temperature
Max. operating junction temperature
Value
700
400
V
(BR)EBO
4
8
2
Unit
V
V
V
Table 3.
Symbol
Thermal data
R
thj-case
Thermal resistance junction - case
R
thj-amb
Thermal resistance junction - ambient
bs
O
et
l
o
ro
P
e
uc
d
s)
t(
Parameter
O
-
so
b
te
le
r
P
d
o
4
uc
s)
t(
A
A
A
A
W
°C
°C
55
-65 to 150
150
Value
2.27
80
Unit
°C/W
°C/W
3/11
Electrical characteristics
BULK128
2
Electrical characteristics
(T
case
= 25°C unless otherwise specified)
Table 4.
Symbol
I
CES
Electrical characteristics
Parameter
Collector cut-off current
(V
BE
= 0)
Emitter base breakdown
voltage
(I
C
= 0)
Collector-emitter
sustaining voltage
(I
B
= 0)
Collector cut-off current
(I
B
= 0)
Test conditions
V
CE
=700 V
V
CE
=700 V
I
E
= 10 mA
T
C
= 125°C
9
Min.
Typ.
Max.
50
500
Unit
µA
µA
V
V
(BR)EBO
18
V
CEO(sus)
(1)
I
C
=10 mA
400
I
CEO
V
CE
=400 V
I
C
= 0.5 A
V
CE(sat) (1)
Collector-emitter
saturation voltage
I
C
= 1 A
I
C
= 4 A
I
C
= 2.5 A
_ _
_ _
V
BE(sat)
(1)
Base-emitter saturation
voltage
b
O
et
l
so
ro
P
e
h
FE (1)
t
s
t
f
t
s
t
f
DC current gain
Resistive load
Storage time
Fall time
Inductive load
Storage time
Fall time
uc
d
)-
(s
t
I
C
= 0.5 A
I
C
= 1 A
I
C
= 2.5 A
I
C
= 10 mA
I
C
= 2 A
I
C
= 2 A
I
B1
= 0.4 A
t
p
= 30
µs
I
C
= 2 A
I
B1
= 0.4 A
R
BB
= 0
_ _
_
_
b
O
so
_ _
_
te
le
ro
P
uc
d
s)
t(
V
250
0.7
1
1.5
0.5
1.1
1.2
1.3
µA
V
V
V
V
V
V
V
I
B
= 0.1 A
I
B
= 0.2 A
I
B
= 0.5 A
I
B
= 1 A
I
B
= 0.1 A
I
B
= 0.2 A
I
B
= 0.5 A
V
CE
= 5 V
V
CE
= 5 V
V
CC
= 125 V
I
B1
= -0.4 A
1.5
0.2
V
clamp
= 200 V
V
BE(off)
= -5 V
0.6
0.1
10
14
_ _
28
3
0.4
µs
µs
1
0.2
µs
µs
1. Pulsed duration = 300 ms, duty cycle
≤
1.5%
4/11
BULK128
Electrical characteristics
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area
Figure 3.
Derating curve
Figure 4.
DC current gain
Figure 5.
DC current gain
Figure 6.
bs
O
et
l
o
ro
P
e
uc
d
s)
t(
O
-
so
b
te
le
ro
P
uc
d
s)
t(
Collector-emitter saturation
voltage
Figure 7.
Base-emitter saturation
voltage
5/11
DSP 与 ARM 处理器
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
