BF999
Silicon N-Channel MOSFET Triode
•
For high-frequency stages up to 300 MHz
preferably in FM applications
•
Pb-free (RoHS compliant) package
1)
•
Qualified according AEC Q101
3
1
2
ESD
(Electrostatic
discharge)
sensitive device, observe handling precaution!
Type
BF999
Maximum Ratings
Parameter
Marking
LBs
1=G
2=D
Pin Configuration
3=S
-
-
-
Package
SOT23
Symbol
V
DS
I
D
±
I
GSM
P
tot
T
stg
T
ch
Value
20
30
10
200
-55 ... 150
150
Unit
V
mA
mA
mW
°C
Drain-source voltage
Continuous drain current
Gate-source peak current
Total power dissipation
T
S
≤
76 °C
Storage temperature
Channel temperature
Thermal Resistance
Parameter
Channel - soldering point
2)
1
Pb-containing
2
For
Symbol
R
thchs
Value
≤
370
Unit
K/W
package may be available upon special request
calculation of
R
thJA please refer to Application Note Thermal Resistance
1
2007-04-20
BF999
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Symbol
Values
Parameter
min.
DC Characteristics
Drain-source breakdown voltage
I
D
= 10 µA, -V
GS
= 4 V
Gate-source breakdown voltage
±
I
GS
= 10 mA,
V
DS
= 0
Gate-source leakage current
±
V
GS
= 5 V,
V
DS
= 0
Drain current
V
DS
= 10 V,
V
GS
= 0
Gate-source pinch-off voltage
V
DS
= 10 V,
I
D
= 20 µA
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Symbol
Values
Parameter
min.
AC Characteristics
Forward transconductance
V
DS
= 10 V,
I
D
= 10 mA
Gate input capacitance
V
DS
= 10 V,
I
D
= 10 mA,
f
= 10 MHz
Output capacitance
V
DS
= 10 V,
I
D
= 10 mA,
f
= 10 MHz
Power gain
V
DS
= 10 V,
I
D
= 10 mA,
f
= 45 MHz
Noise figure
V
DS
= 10 V,
I
D
= 10 mA,
f
= 45 MHz
F
-
2.1
-
dB
G
p
-
27
-
dB
C
dss
-
0.9
-
pF
C
gss
-
2.5
-
pF
g
fs
14
20
-
mS
typ.
max.
-V
GS(p)
-
0.8
1.5
V
I
DSS
5
10
16
mA
±
I
GSS
-
-
50
nA
±V
(BR)GSS
6.5
-
12
V
(BR)DS
20
-
-
V
typ.
max.
Unit
Unit
2
2007-04-20
BF999
Total power dissipation
P
tot
=
ƒ(T
S
)
Output characteristics
I
D
=
ƒ(V
DS
)
250
18
mA
0.3V
mW
14
12
150
0.2V
P
tot
0.1V
0V
-0.1V
-0.2V
-0.3V
I
D
10
8
6
4
2
100
50
-0.4V
0
0
15
30
45
60
75
90 105 120
°C
150
0
0
5
10
V
20
T
S
V
DS
Gate transconductance
g
fs
=
ƒ(V
GS
)
Drain current
I
D
= (V
GS
)
30
30
mS
mA
G
fs
20
20
15
I
D
15
10
10
5
5
0
-1
V
-0.5
0
0.5
1.5
0
-1
V
1
V
GS
V
GS
3
2007-04-20
BF999
Gate input capacitance
C
gss
=
ƒ(V
GS
)
Output capacitance
C
dss
=
ƒ(V
DS
)
3
3
C
gSS
1
C
dSS
0
-2
V
pF
pF
1
-1
1
0
0
5
V
15
V
GS
V
DS
4
2007-04-20
Package SOT23
BF999
Package Outline
0.15 MIN.
1
±0.1
0.1 MAX.
1.3
±0.1
2.9
±0.1
3
B
2.4
±0.15
10˚ MAX.
1)
0.4
+0.1
-0.05
1
2
10˚ MAX.
C
0.95
1.9
0.08...0.1
A
5
0...8˚
0.25
M
B C
0.2
M
A
1) Lead width can be 0.6 max. in dambar area
Foot Print
0.8
0.9
0.8
1.2
Marking Layout (Example)
Manufacturer
EH
s
Pin 1
0.9
1.3
2005, June
Date code (YM)
BCW66
Type code
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
4
0.9
2.13
2.65
0.2
8
Pin 1
3.15
1.15
5
2007-04-20
嵌入式系统
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