Logic –Level Gate Drive
Advanced Process Technology
Isolated Package
High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm
Fully Avalanche Rated
Lead-Free
IRLI3705NPbF
HEXFET
®
Power MOSFET
V
DSS
R
DS(on)
I
D
55V
0.01
52A
Description
Fifth Generation HEXFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low on-
resistance per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that HEXFET
Power MOSFETs are well known for, provides the designer with
an extremely efficient and reliable device for use in a wide variety
of applications.
The TO-220 Full Pak eliminates the need for additional insulating
hardware in commercial-industrial applications. The molding
compound used provides a high isolation capability and a low
thermal resistance between the tab and external heat sink. This
isolation is equivalent to using a 100 micron mica barrier with
standard TO-220 product. The Fullpak is mounted to a heat sink
using a single clip or by a single screw fixing.
Base Part Number
IRLI3705NPbF
Package Type
TO-220 Full-Pak
G
D
S
TO-220 Full-Pak
G
Gate
D
Drain
S
Source
Standard Pack
Form
Quantity
Tube
50
Orderable Part Number
IRLI3705NPbF
Absolute Maximum Ratings
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Parameter
Max.
52
37
310
58
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
0.39
± 16
340
46
5.8
5.0
-55 to + 175
300
10 lbf•in (1.1N•m)
Thermal Resistance
Symbol
Junction-to-Case
R
JC
Junction-to-Ambient
R
JA
1
Parameter
Typ.
–––
–––
Max.
2.6
65
Units
°C/W
2017-04-27
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
V
(BR)DSS
/T
J
R
DS(on)
V
GS(th)
gfs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Trans conductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
IRLI3705NPbF
Min. Typ. Max. Units
Conditions
55
–––
–––
V V
GS
= 0V, I
D
= 250µA
––– 0.056 ––– V/°C Reference to 25°C, I
D
= 1mA
––– ––– 0.010
V
GS
= 10V, I
D
= 28A
––– ––– 0.012
V
GS
= 5.0V, I
D
= 28A
––– ––– 0.018
V
GS
= 4.0V, I
D
= 24A
1.0
–––
2.0
V V
DS
= V
GS
, I
D
= 250µA
50
–––
–––
S V
DS
= 25V, I
D
= 46A
––– –––
25
V
DS
= 55V, V
GS
= 0V
µA
––– –––
250
V
DS
= 44V,V
GS
= 0V,T
J
=150°C
––– –––
100
V
GS
= 16V
nA
––– ––– -100
V
GS
= -16V
––– –––
98
I
D
= 46A
nC
V
DS
= 44V
––– –––
19
V
GS
= 5.0V , See Fig. 6 and 13
––– –––
49
–––
12
–––
V
DD
= 28V
––– 140
–––
I
D
= 46A
ns
–––
37
–––
R
G
= 1.8V
GS
= 5.0V
–––
78
–––
R
D
= 0.59See Fig. 10
Between lead,
–––
4.5
–––
6mm (0.25in.)
nH
from package
–––
7.5
–––
and center of die contact
––– 3600 –––
V
GS
= 0V
––– 870
–––
V = 25V
pF
DS
ƒ = 1.0MHz, See Fig. 5
––– 320
–––
–––
12
–––
ƒ = 1.0MHz
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
94
290
Max. Units
52
A
310
1.3
140
440
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C,I
S
= 28A,V
GS
= 0V
T
J
= 25°C ,I
F
= 46A
di/dt = 100A/µs
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
C
Drain to Sink Capacitance
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
I
S
(Body Diode)
Pulsed Source Current
I
SM
(Body Diode)
V
SD
Diode Forward Voltage
t
rr
Q
rr
Notes:
Reverse Recovery Time
Reverse Recovery Charge
Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)
V
DD
= 25V, starting T
J
= 25°C, L = 320H, R
G
= 25, I
AS
= 46A (See fig. 12)
I
SD
46A,
di/dt
250A/µs,
V
DD
V
(BR)DSS
, T
J
175°C.
Pulse width
300µs;
duty cycle
2%.
t=60s, ƒ=60Hz
Uses IRL3705N data and test conditions.
2
2017-04-27
IRLI3705NPbF
1000
I
D
, Drain-to-Source Current (A)
I
D
, Drain-to-Source Current (A)
VGS
TOP
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
1000
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
TOP
100
100
10
10
2.5V
2.5V
1
0.1
20µs PULSE WIDTH
T
J
= 25°C
1
10
100
A
1
0.1
20µs PULSE WIDTH
T
J
= 175°C
1
10
100
A
V
DS
, Drain-to-Source Voltage (V)
Fig. 1
Typical Output Characteristics
V
DS
, Drain-to-Source Voltage (V)
Fig. 2
Typical Output Characteristics
1000
3.0
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= 77A
I
D
, Drain-to-Source Current (A)
T
J
= 25°C
100
2.5
T
J
= 175°C
2.0
1.5
10
1.0
0.5
1
2.0
3.0
4.0
5.0
V
DS
= 25V
20µs PULSE WIDTH
6.0
7.0
8.0
A
0.0
-60 -40 -20
0
20
40
60
V
GS
= 10V
80 100 120 140 160 180
A
V
GS
, Gate-to-Source Voltage (V)
Fig. 3
Typical Transfer Characteristics
T
J
, Junction Temperature (°C)
Fig. 4
Normalized On-Resistance
vs. Temperature
2017-04-27
3
IRLI3705NPbF
6000
5000
V
GS
, Gate-to-Source Voltage (V)
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
iss C
oss
= C
ds
+ C
gd
15
I
D
= 46A
V
DS
= 44V
V
DS
= 28V
12
C, Capacitance (pF)
4000
9
3000
C
oss
6
2000
1000
C
rss
3
0
1
10
100
A
0
0
20
40
60
FOR TEST CIRCUIT
SEE FIGURE 13
80
100
120
140
A
V
DS
, Drain-to-Source Voltage (V)
Fig 5.
Typical Capacitance vs.
Drain-to-Source Voltage
Q
G
, Total Gate Charge (nC)
Fig 6.
Typical Gate Charge vs.
Gate-to-Source Voltage
1000
1000
I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10µs
100
100µs
100
T
J
= 175°C
T
J
= 25°C
I
D
, Drain Current (A)
10
1ms
10ms
10
0.4
0.8
1.2
1.6
2.0
V
GS
= 0V
2.4
A
1
1
T
C
= 25°C
T
J
= 175°C
Single Pulse
10
2.8
100
A
V
SD
, Source-to-Drain Voltage (V)
Fig. 7
Typical Source-to-Drain Diode
Forward Voltage
4
V
DS
, Drain-to-Source Voltage (V)
Fig 8.
Maximum Safe Operating Area
2017-04-27
IRLI3705NPbF
60
50
I
D
, Drain Current (A)
40
30
Fig 10a.
Switching Time Test Circuit
20
10
0
25
50
75
100
125
150
175
T
C
, Case Temperature ( °C)
Fig 9.
Maximum Drain Current vs. Case Temperature
Fig 10b.
Switching Time Waveforms
10
Thermal Response (Z
thJC
)
D = 0.50
1
0.20
0.10
0.05
0.1
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.001
0.01
0.1
1
10
P
DM
t
1
t
2
0.01
0.00001
0.0001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
5
2017-04-27
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