BTA316B-600BT
3Q Hi-Com Triac
16 August 2017
Product data sheet
1. General description
Planar passivated high commutation three quadrant triac in a SOT404 (D2PAK) surface mountable
plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can
occur. This "series BT" triac will commutate the full RMS current at the maximum rated junction
temperature (T
j(max)
= 150 °C) without the aid of a snubber. It is used in applications where "high
junction operating temperature capability" is required.
2. Features and benefits
•
•
•
•
•
•
•
•
•
3Q technology for improved noise immunity
High commutation capability with maximum false trigger immunity
High immunity to false turn-on by dV/dt
High junction operating temperature capability
High voltage capability
Less sensitive gate for very high noise immunity
Planar passivated for voltage ruggedness and reliability
Surface mountable package
Triggering in three quadrants only
3. Applications
•
•
•
•
Applications subject to high temperature
Electronic thermostats (heating and cooling)
High power motor controls e.g. washing machines and vacuum cleaners
Rectifier-fed DC inductive loads e.g. DC motors and solenoids
4. Quick reference data
Table 1. Quick reference data
Symbol
V
DRM
I
T(RMS)
I
TSM
Parameter
repetitive peak off-
state voltage
RMS on-state current
full sine wave; T
mb
≤ 120 °C;
Fig. 1;
Fig. 2; Fig. 3
Conditions
Min
-
-
-
-
-
Typ
-
-
-
-
-
Max
600
16
140
150
150
Unit
V
A
A
A
°C
non-repetitive peak on- full sine wave; T
j(init)
= 25 °C;
t
p
= 20 ms;
Fig. 4; Fig. 5
state current
full sine wave; T
j(init)
= 25 °C;
t
p
= 16.7 ms
T
j
junction temperature
Static characteristics
WeEn Semiconductors
BTA316B-600BT
3Q Hi-Com Triac
Symbol
I
GT
Parameter
gate trigger current
Conditions
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C;
Fig. 7
Min
2
2
2
-
-
1000
Typ
-
-
-
-
1.3
-
Max
50
50
50
60
1.5
-
Unit
mA
mA
mA
mA
V
V/µs
I
H
V
T
dV
D
/dt
holding current
on-state voltage
rate of rise of off-state
voltage
rate of change of
commutating current
V
D
= 12 V; T
j
= 25 °C;
Fig. 9
I
T
= 18 A; T
j
= 25 °C;
Fig. 10
V
DM
= 402 V; T
j
= 150 °C; (V
DM
= 67%
of V
DRM
); exponential waveform; gate
open circuit
V
D
= 400 V; T
j
= 150 °C; I
T(RMS)
= 16 A;
dV
com
/dt = 20 V/µs; (snubberless
condition); gate open circuit
Dynamic characteristics
dI
com
/dt
20
-
-
A/ms
5. Pinning information
Table 2. Pinning information
Pin
1
2
3
mb
Symbol Description
T1
T2
G
T2
main terminal 1
main terminal 2
gate
mounting base; main
terminal 2
1
2
3
Simplified outline
mb
Graphic symbol
T2
sym051
T1
G
D2PAK (SOT404)
6. Ordering information
Table 3. Ordering information
Type number
BTA316B-600BT
Package
Name
D2PAK
Description
plastic single-ended surface-mounted package (D2PAK); 3
leads (one lead cropped)
Version
SOT404
BTA316B-600BT
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2017. All rights reserved
Product data sheet
16 August 2017
2 / 13
WeEn Semiconductors
BTA316B-600BT
3Q Hi-Com Triac
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DRM
I
T(RMS)
I
TSM
Parameter
repetitive peak off-state
voltage
RMS on-state current
non-repetitive peak on-
state current
I t for fusing
rate of rise of on-state
current
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
20
I
T(RMS)
(A)
16
003aaj662
Conditions
Min
-
Max
600
16
140
150
98
100
2
5
0.5
150
150
003aaj663
Unit
V
A
A
A
A²s
A/µs
A
W
W
°C
°C
full sine wave; T
mb
≤ 120 °C;
Fig. 1;
Fig. 2; Fig. 3
full sine wave; T
j(init)
= 25 °C; t
p
= 20 ms;
Fig. 4; Fig. 5
full sine wave; T
j(init)
= 25 °C; t
p
= 16.7 ms
t
p
= 10 ms; SIN
I
G
= 100 mA
-
-
-
-
-
-
-
I t
dI
T
/dt
I
GM
P
GM
P
G(AV)
T
stg
T
j
2
2
over any 20 ms period
-
-40
-
60
50
40
120 °C
I
T(RMS)
(A)
12
30
8
20
4
10
0
10
-2
0
-50
0
50
100
T
mb
(°C)
150
10
-1
1
10
surge duration (s)
Fig. 1. RMS on-state current as a function of mounting
base temperature; maximum values
f = 50 Hz; T
mb
= 120 °C
Fig. 2. RMS on-state current as a function of surge
duration; maximum values
BTA316B-600BT
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2017. All rights reserved
Product data sheet
16 August 2017
3 / 13
WeEn Semiconductors
BTA316B-600BT
3Q Hi-Com Triac
20
P
tot
(W)
15
003aaj665
conduction
angle,
(degrees)
30
60
90
120
180
form
factor
a
4
2.8
2.2
1.9
1.57
α
α =180°
120°
90°
60°
30°
10
5
0
0
2
4
6
8
10
12
14
I
T(RMS)
(A)
16
Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values
160
I
TSM
(A)
120
003aab668
80
I
T
I
TSM
t
1/f
T
j(init)
= 25 °C max
40
0
1
10
10
2
number of cycles (n)
10
3
f = 50 Hz
Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
BTA316B-600BT
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2017. All rights reserved
Product data sheet
16 August 2017
4 / 13
WeEn Semiconductors
BTA316B-600BT
3Q Hi-Com Triac
10
3
I
TSM
(A)
(1)
003aab671
10
2
I
T
I
TSM
t
t
p
T
j(init)
= 25 °C max
10
10
-5
10
-4
10
-3
10
-2
t
p
(s)
10
-1
t
p
≤ 20 ms
(1) dI
T
/dt limit
Fig. 5. Non-repetitive peak on-state current as a function of pulse duration; maximum values
BTA316B-600BT
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2017. All rights reserved
Product data sheet
16 August 2017
5 / 13
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