IKW25T120
TrenchStop
®
Series
Low Loss DuoPack : IGBT in
TrenchStop
®
and Fieldstop technology with soft,
fast recovery anti-parallel Emitter Controlled HE diode
C
Approx. 1.0V reduced V
CE(sat)
and 0.5V reduced V
F
compared to BUP314D
Short circuit withstand time – 10s
Designed for :
- Frequency Converters
- Uninterrupted Power Supply
®
TrenchStop
and Fieldstop technology for 1200 V applications
offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
NPT technology offers easy parallel switching capability due to
positive temperature coefficient in V
CE(sat)
Low EMI
Low Gate Charge
Very soft, fast recovery anti-parallel Emitter Controlled HE diode
1
Qualified according to JEDEC for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models :
http://www.infineon.com/igbt/
V
CE
1200V
I
C
25A
V
CE(sat),Tj=25°C
1.7V
T
j,max
150C
Marking Code
K25T120
Package
PG-TO-247-3
G
E
PG-TO-247-3
Type
IKW25T120
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
T
C
= 25C
T
C
= 100C
Pulsed collector current,
t
p
limited by
T
jmax
Turn off safe operating area
V
CE
1200V,
T
j
150C
Diode forward current
T
C
= 25C
T
C
= 100C
Diode pulsed current,
t
p
limited by
T
jmax
Gate-emitter voltage
Short circuit withstand time
Power dissipation
T
C
= 25C
Operating junction temperature
Storage temperature
T
j
T
stg
-40...+150
-55...+150
C
2)
Symbol
V
CE
I
C
Value
1200
50
25
Unit
V
A
I
Cpul s
-
I
F
75
75
50
25
I
Fpul s
V
GE
t
SC
P
tot
75
20
10
190
V
s
W
V
GE
= 15V,
V
CC
1200V,
T
j
150C
1
2)
J-STD-020 and JESD-022
Allowed number of short circuits: <1000; time between short circuits: >1s.
1
Rev. 2.3 12.06.2013
IFAG IPC TD VLS
IKW25T120
TrenchStop
®
Series
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
-
260
IFAG IPC TD VLS
2
Rev. 2.3 12.06.2013
IKW25T120
TrenchStop
®
Series
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
junction – case
Thermal resistance,
junction – ambient
Electrical Characteristic,
at
T
j
= 25
C,
unless otherwise specified
Parameter
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
V
( B R ) C E S
V
G E
= 0V ,
I
C
= 5 00
A
V
CE(sat)
V
G E
= 15 V ,
I
C
= 25 A
T
j
=2 5
C
T
j
=1 2 5 C
T
j
=1 5 0 C
Diode forward voltage
V
F
V
G E
= 0V ,
I
F
= 2 5 A
T
j
=2 5
C
T
j
=1 2 5 C
T
j
=1 5 0 C
Gate-emitter threshold voltage
Zero gate voltage collector current
V
GE(th)
I
CES
I
C
= 1m A,
V
CE
=
V
GE
V
C E
= 12 0 0V
,
V
G E
= 0V
T
j
=2 5
C
T
j
=1 5 0 C
Gate-emitter leakage current
Transconductance
Integrated gate resistor
I
GES
g
fs
R
Gint
V
C E
= 0V ,
V
G E
=2 0 V
V
C E
= 20 V ,
I
C
= 25 A
-
-
-
-
-
-
-
16
8
0.25
2.5
600
-
nA
S
Ω
-
-
-
5.0
1.7
1.7
1.7
5.8
2.2
-
-
6.5
mA
-
-
-
1.7
2.0
2.2
2.2
-
-
1200
-
-
V
Symbol
Conditions
Value
min.
typ.
max.
Unit
R
thJA
40
R
thJCD
1.0
R
thJC
0.65
K/W
Symbol
Conditions
Max. Value
Unit
IFAG IPC TD VLS
3
Rev. 2.3 12.06.2013
IKW25T120
TrenchStop
®
Series
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current
1)
C
iss
C
oss
C
rss
Q
Gate
L
E
I
C(SC)
V
C E
= 25 V ,
V
G E
= 0V ,
f=
1 MH z
V
C C
= 96 0 V,
I
C
=2 5 A
V
G E
= 15 V
-
-
-
-
-
1860
96
82
155
13
150
-
-
-
-
-
-
pF
nC
nH
A
V
G E
= 15 V ,t
S C
10
s
V
C C
= 6 0 0 V,
T
j
= 25
C
-
Switching Characteristic, Inductive Load,
at
T
j
=25
C
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during
t
b
t
rr
Q
rr
I
rrm
d i
r r
/d t
T
j
=2 5
C
,
V
R
= 6 00 V ,
I
F
= 2 5 A,
d i
F
/ d t
=8 0 0 A/
s
-
-
-
-
200
2.3
21
390
-
-
ns
µC
A
A/s
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
T
j
=2 5
C
,
V
C C
= 60 0 V,
I
C
= 2 5 A
V
G E
= 0/ 15 V ,
R
G
= 22
,
2)
L
=1 8 0n H,
2)
C
= 3 9p F
Energy losses include
“tail” and diode
reverse recovery.
-
-
-
-
-
-
-
50
30
560
70
2.0
2.2
4.2
-
-
-
-
-
-
-
mJ
ns
Symbol
Conditions
Value
min.
typ.
max.
Unit
1)
2)
Allowed number of short circuits: <1000; time between short circuits: >1s.
Leakage inductance
L
a nd Stray capacity
C
due to dynamic test circuit in Figure E.
4
Rev. 2.3 12.06.2013
IFAG IPC TD VLS
IKW25T120
TrenchStop
®
Series
Switching Characteristic, Inductive Load,
at
T
j
=150
C
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during
t
b
t
rr
Q
rr
I
rrm
d i
r r
/d t
T
j
=1 5 0 C
V
R
= 6 00 V ,
I
F
= 2 5 A,
d i
F
/ d t
=8 0 0 A/
s
-
-
-
-
320
5.2
29
320
-
-
-
ns
µC
A
A/s
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
T
j
=1 5 0 C
V
C C
= 60 0 V,
I
C
= 2 5 A,
V
G E
= 0/ 15 V ,
R
G
= 2 2 ,
1)
L
=1 8 0n H,
1)
C
= 3 9p F
Energy losses include
“tail” and diode
reverse recovery.
-
-
-
-
-
-
-
50
32
660
130
3.0
4.0
7.0
-
-
-
-
-
-
-
mJ
ns
Symbol
Conditions
Value
min.
typ.
max.
Unit
1)
Leakage inductance
L
a nd Stray capacity
C
due to dynamic test circuit in Figure E.
5
Rev. 2.3 12.06.2013
IFAG IPC TD VLS
嵌入式系统
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