MWI 450-12 E9
IGBT Modules
Sixpack
2
15
28
16
17
11/12
29
13
14
1
18
19
3
20
21
22
9/10
23
24
5
4
25
26
27
7/8
6
I
C80
= 440 A
V
CES
= 1200 V
V
CE(sat) typ.
= 2.2 V
E72873
See outline drawing for pin arrangement
IGBTs
Symbol
V
CES
V
GES
I
C25
I
C80
RBSOA
t
SC
(SCSOA)
P
tot
Symbol
T
C
= 25°C
T
C
= 80°C
R
G
= 2.7
Ω;
T
VJ
= 125°C
Clamped inductive load; L = 100 µH
V
CE
= 900 V; V
GE
=
±
15 V; R
G
= 2.7
Ω
T
VJ
= 125°C; non-repetitive; V
CEmax
< V
CES
T
C
= 25°C
Conditions
Conditions
T
VJ
= 25°C to 125°C
Maximum Ratings
1200
±
20
640
440
V
Features
• NPT
3
IGBT technology
• low saturation voltage
• low switching losses
• square RBSOA, no latch up
• high short circuit capability
• positive temperature coefficient for
easy parallelling
• MOS input, voltage controlled
• ultra fast free wheeling diodes
• solderable pins for PCB mounting
• package with copper base plate
Advantages
• space savings
• reduced protection circuits
• package designed for wave soldering
Typical Applications
V
V
V
mA
mA
nA
ns
ns
ns
ns
mJ
mJ
nF
µC
0.057
K/W
• AC motor control
• AC servo and robot drives
• power supplies
-o
I
CM
= 900
V
CEK
< V
CES
10
2.2
min.
typ.
2.2
2.5
4.5
6
max.
2.4
6.5
1
21
600
190
116
475
100
35
47
33
3.3
e
(T
VJ
= 25°C, unless otherwise specified)
V
CE(sat)
V
GE(th)
I
CES
I
GES
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
Q
Gon
R
thJC
I
C
= 450 A; V
GE
= 15 V
I
C
= 18 mA; V
GE
= V
CE
V
CE
= V
CES
; V
GE
= 0 V
V
CE
= 0 V; V
GE
=
±
20 V
Inductive load, T
VJ
= 125°C
V
CE
= 600 V; I
C
= 450 A
V
GE
= ±15 V; R
G
= 2.7
Ω
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz
V
CE
= 600 V; V
GE
= 15 V; I
C
= 450 A
IXYS reserves the right to change limits, test conditions and dimensions.
p
h
a
T
VJ
= 25°C
T
VJ
= 125°C
T
VJ
= 25°C
T
VJ
= 125°C
s
Characteristic Values
u
A
A
A
µs
kW
t
V
20100401a
© 2010 IXYS All rights reserved
1-5
MWI 450-12 E9
Diodes
Symbol
I
F80
I
FRM
I
2
t
Symbol
Conditions
T
C
= 80°C
t
p
= 1 ms
T
VJ
= 125°C; t = 10 ms; V
R
= 0 V
Conditions
Maximum Ratings
450
900
35000
A
A
A
2
s
Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min.
typ.
max.
2.2
200
0.075
V
A
K/W
V
F
I
RM
R
thJC
I
F
= 450 A; V
GE
= 0 V; T
VJ
= 25°C
I
F
= 450 A; di
F
/dt = 3500 A/µs;
T
VJ
= 125°C; V
R
= 800 V
Temperature Sensor NTC
min.
R
25
B
25/50
Module
Symbol
T
VJ
T
JM
T
stg
V
ISO
M
d
Conditions
operating
T = 25°C
4.75
typ.
5.0
3375
max.
5.25
-o
e
s
min.
typ.
-40...+125
+150
-40...+125
3400
3-6
3-6
Maximum Ratings
°C
°C
°C
V~
Nm
Nm
I
ISOL
< 1 mA; 50/60 Hz
Mounting torque (M5)
Terminal connection torque (M6)
Conditions
Symbol
a
h
Characteristic Values
max.
R
therm-chip
*
)
Resistance terminal to chip
Strike distance in air
0.55
12.7
10
0.01
900
d
A
R
thCH
Weight
with heatsink compound
p
d
S
Creepage distance on surface
*
)
V = V
CEsat
+ 2x R
therm-chip
·I
C
resp. V = V
F
+ 2x R·I
F
IXYS reserves the right to change limits, test conditions and dimensions.
u
kΩ
K
mΩ
mm
mm
K/W
g
t
20100401a
Symbol
Conditions
Characteristic Values
© 2010 IXYS All rights reserved
2-5
MWI 450-12 E9
Dimensions in mm (1 mm = 0.0394")
p
h
Diode
R
i
2.884·10
-5
1.523·10
-3
7.617·10
-3
0.03
0.036
τ
i
1·10
-5
5·10
-5
0.012
0.078
0.82
R
i
a
=
tolerance for all dimensions:
s
IGBT
τ
i
1·10
-5
5·10
-5
0.015
0.075
0.69
2.344·10
-5
5.97·10
-4
5.97·10
-3
0.023
0.028
IXYS reserves the right to change limits, test conditions and dimensions.
e
-o
u
t
20100401a
© 2010 IXYS All rights reserved
3-5
MWI 450-12 E9
800
600
I
C
[A]
T
J
= 25°C
800
11 V
13 V
15 V
17 V
19 V
T
J
= 125°C
600
I
C
[A]
400
200
0
9V
400
200
0
11 V
13 V
15 V
17 V
19 V
9V
0
2
V
CE
[V]
4
6
0
2
V
CE
[V]
4
6
Fig. 1 Typ. output characteristics
Fig. 2 Typ. output characteristics
800
800
600
600
I
C
[A]
I
F
[A]
-o
200
400
T
J
= 125°C
T
J
= 25°C
400
200
u
T
J
= 125°C
T
J
= 25°C
e
0
6
8
Fig. 3 Typ. transfer characteristics
s
V
GE
[V]
10
12
0
0.0
0.5
t
1.0
1.5
2.0
2.5
3.0
3.5
V
F
[V]
h
15
10
5
V
GE
[V]
V
CE
= 600 V
I
C
= 100 A
a
400
Fig. 4 Typ. forward characteristics
of free wheeling diode
6000
T
J
= 125°C
V
R
= 600 V
I
F
= 300 A
12
Ω
3.3
Ω
5000
6.8
Ω
p
300
I
RM
[A]
4000
3000
2000
t
rr
0
-5
200
I
RM
18
Ω
100
-10
-15
0
1000
0
18
Ω
12
Ω
6.8
Ω
3.3
Ω
0
1
2
Q
G
[µC]
3
1000
2000
3000
4000
-di/dt
[A/µs]
Fig. 5 Typ. turn on gate charge
Fig. 6 Typ. turn off characteristics
of free wheeling diode
IXYS reserves the right to change limits, test conditions and dimensions.
20100401a
© 2010 IXYS All rights reserved
t
rr
[ns]
4-5
MWI 450-12 E9
60
50
180
t
d(on)
240
120
100
600
500
V
CE
= 600 V
V
GE
= ±15 V
R
G
= 1.6
Ω
T
VJ
= 125°C
40
E
[mJ]
E
off
[mJ]
30
20
R
G
= 1.6
Ω
T
VJ
= 125°C
E
rec(off)
t
[ns]
120
60
40
20
300
200
60
t
f
E
off
10
E
on
100
0
0
0
100 200 300 400 500 600 700 800 900
I
C
[A]
0
0
200
400
I
C
[A]
600
800
Fig. 7 Typ. turn on energy and switching times
versus collector current
300
250
200
E
[mJ]
600
500
t
r
Fig. 8 Typ. turn off energy and switching times
versus collector current
100
90
80
70
60
50
40
30
20
10
0
0
5
10
15
R
G
[Ω]
2500
2000
1500
1000
500
t
f
t
20
10
100
t
[ms]
1000
400
E
off
[mJ]
u
V
CE
= 600 V
V
GE
= ±15 V
I
C
= 450 A
T
VJ
= 125°C
t
d(on)
E
on
V
CE
= 600 V
V
GE
= ±15 V
I
C
= 450 A
T
VJ
= 125°C
t
d(off)
100
50
0
E
rec(off)
200
100
0
e
-o
150
300
t
[ns]
E
off
R
G
[Ω]
Fig. 9 Typ. turn on energy and switching times
versus gate resistor
35
30
E
rec(off)
[mJ]
a
s
0
5
10
15
20
25
30
25
30
0
Fig. 10 Typ. turn off energy and switching times
versus gate resistor
0.08
h
p
V
R
= 600 V
I
F
= ±15 V
T
VJ
= 125°C
70
65
diode
3.3
Ω
0.06
60
25
20
15
Z
thJC
[K/W]
6.8
Ω
12
Ω
18
Ω
12
Ω
18Ω
Qrr
3.3
Ω
55
50
Q
rr
[nC]
single pulse
IGBT
0.04
0.02
45
10
Erec(off)
5
1000
2000
di/dt
[A/µs]
3000
4000
40
0.00
MWI450-12E9
1
10000
Fig. 11 Typ. turn off energy and recovered charge
of free wheeling diode
Fig. 12 Typ. transient thermal impedance
IXYS reserves the right to change limits, test conditions and dimensions.
20100401a
© 2010 IXYS All rights reserved
5-5
t
[ns]
t
[ns]
V
CE
= 600 V
V
GE
= ±15 V
80
t
r
400
t
d(off)
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