BDW53, BDW53A, BDW53B, BDW53C, BDW53D
NPN SILICON POWER DARLINGTONS
●
Designed for Complementary Use with
BDW54, BDW54A, BDW54B, BDW54C and
BDW54D
40 W at 25°C Case Temperature
B
TO-220 PACKAGE
(TOP VIEW)
●
●
●
1
2
3
4 A Continuous Collector Current
Minimum h
FE
of 750 at 3V, 1.5 A
C
E
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
BDW53
BDW53A
Collector-base voltage (I
E
= 0)
BDW53B
BDW53C
BDW53D
BDW53
BDW53A
Collector-emitter voltage (I
B
= 0) (see Note 1)
BDW53B
BDW53C
BDW53D
Emitter-base voltage
Continuous collector current
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Unclamped inductive load energy (see Note 4)
Operating junction temperature range
Operating temperature range
Operating free-air temperature range
NOTES: 1.
2.
3.
4.
V
EBO
I
C
I
B
P
tot
P
tot
½LI
C
T
j
T
stg
T
A
2
SYMBOL
VALUE
45
60
UNIT
V
CBO
80
100
120
45
60
V
V
CEO
80
100
120
5
4
50
40
2
25
-65 to +150
-65 to +150
-65 to +150
V
V
A
mA
W
W
mJ
°C
°C
°C
These values apply when the base-emitter diode is open circuited.
Derate linearly to 150°C case temperature at the rate of 0.32 W/°C.
Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I
B(on)
= 5 mA, R
BE
= 100
Ω,
V
BE(off)
= 0, R
S
= 0.1
Ω,
V
CC
= 20 V.
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
1
BDW53, BDW53A, BDW53B, BDW53C, BDW53D
NPN SILICON POWER DARLINGTONS
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
BDW53
V
(BR)CEO
Collector-emitter
breakdown voltage
BDW53A
I
C
= 30 mA
I
B
= 0
(see Note 5)
BDW53B
BDW53C
BDW53D
V
CE
= 30 V
I
CEO
Collector-emitter
cut-off current
V
CE
= 30 V
V
CE
= 40 V
V
CE
= 50 V
V
CE
= 60 V
V
CB
= 45 V
V
CB
= 60 V
V
CB
= 80 V
V
CB
= 100 V
I
CBO
Collector cut-off
current
V
CB
= 120 V
V
CB
= 45 V
V
CB
= 60 V
V
CB
= 80 V
V
CB
= 100 V
V
CB
= 120 V
I
EBO
h
FE
V
BE(on)
V
CE(sat)
V
EC
Emitter cut-off
current
Forward current
transfer ratio
Base-emitter
voltage
Collector-emitter
saturation voltage
Parallel diode
forward voltage
V
EB
=
V
CE
=
V
CE
=
V
CE
=
I
B
=
I
B
=
I
E
=
5V
3V
3V
3V
30 mA
40 mA
4A
I
B
= 0
I
B
= 0
I
B
= 0
I
B
= 0
I
B
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
C
= 0
I
C
= 1.5 A
I
C
=
4A
(see Notes 5 and 6)
(see Notes 5 and 6)
(see Notes 5 and 6)
750
100
2.5
2.5
4
3.5
V
V
V
T
C
= 150°C
T
C
= 150°C
T
C
= 150°C
T
C
= 150°C
T
C
= 150°C
BDW53
BDW53A
BDW53B
BDW53C
BDW53D
BDW53
BDW53A
BDW53B
BDW53C
BDW53D
BDW53
BDW53A
BDW53B
BDW53C
BDW53D
MIN
45
60
80
100
120
0.5
0.5
0.5
0.5
0.5
0.2
0.2
0.2
0.2
0.2
5
5
5
5
5
2
20000
mA
mA
mA
V
TYP
MAX
UNIT
I
C
= 1.5 A
I
C
= 1.5 A
I
C
=
I
B
= 0
4A
NOTES: 5. These parameters must be measured using pulse techniques, t
p
= 300 µs, duty cycle
≤
2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
PARAMETER
R
θJC
R
θJA
Junction to case thermal resistance
Junction to free air thermal resistance
MIN
TYP
MAX
3.125
62.5
UNIT
°C/W
°C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
t
on
t
off
†
TEST CONDITIONS
I
C
= 2 A
V
BE(off)
= -5 V
I
B(on)
= 8 mA
R
L
= 15
Ω
†
MIN
I
B(off)
= -8 mA
t
p
= 20
µs,
dc
≤
2%
TYP
1
4.5
MAX
UNIT
µs
µs
Turn-on time
Turn-off time
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
2
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
BDW53, BDW53A, BDW53B, BDW53C, BDW53D
NPN SILICON POWER DARLINGTONS
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
V
CE(sat)
- Collector-Emitter Saturation Voltage - V
20000
10000
h
FE
- Typical DC Current Gain
TCS110AD
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
2·0
t
p
= 300 µs, duty cycle < 2%
I
B
= I
C
/ 100
1·5
TCS110AB
T
C
= -40°C
T
C
= 25°C
T
C
= 100°C
1·0
1000
0·5
T
C
= -40°C
T
C
= 25°C
T
C
= 100°C
0
0·5
1·0
I
C
- Collector Current - A
5·0
V
CE
= 3 V
t
p
= 300 µs, duty cycle < 2%
100
0·5
1·0
I
C
- Collector Current - A
5·0
Figure 1.
Figure 2.
BASE-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
3·0
V
BE(sat)
- Base-Emitter Saturation Voltage - V
T
C
= -40°C
T
C
= 25°C
T
C
= 100°C
TCS110AC
2·5
2·0
1·5
1·0
I
B
= I
C
/ 100
t
p
= 300 µs, duty cycle < 2%
0·5
0·5
1·0
I
C
- Collector Current - A
5·0
Figure 3.
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
3
BDW53, BDW53A, BDW53B, BDW53C, BDW53D
NPN SILICON POWER DARLINGTONS
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
10
SAS110AC
I
C
- Collector Current - A
1·0
0·1
BDW53
BDW53A
BDW53B
BDW53C
BDW53D
0.01
1·0
10
100
1000
V
CE
- Collector-Emitter Voltage - V
Figure 4.
THERMAL INFORMATION
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
60
P
tot
- Maximum Power Dissipation - W
TIS110AB
50
40
30
20
10
0
0
25
50
75
100
125
150
T
C
- Case Temperature - °C
Figure 5.
4
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
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