TGA4514
2 Watt Ka-Band Power Amplifier
Key Features
•
•
•
•
•
•
•
•
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Typical Frequency Range: 31 - 35 GHz
33.5 dBm Nominal Psat @ Vd = 7V
31.5 dBm Nominal P1dB
IMD3: 31dBc at Pout/tone=22dBm
18 dB Nominal Gain
Bias 6 - 7 V, 1150 mA
0.25 um 2MI pHEMT Technology
Chip Dimensions 4.0 x 3.2 x 0.1 mm
(0.161 x 0.128 x 0.004) in
Measured Performance
Bias Conditions: Vd = 6 V, Id = 1150 mA
Primary Applications
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•
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Point-to-Point Radio
Military Radar Systems
Ka Band Sat-Com
30
Gain & R eturn Loss (dB )
20
10
0
-10
-20
-30
28
29
30
31
32
33
34
35
36
37
38
Frequency (GHz)
GAIN
ORL
IRL
Product Description
The TriQuint TGA4514 is Power Amplifier for Ka-
band applications. The part is designed using
TriQuint’s proven standard 0.25 um gate Power
pHEMT production process.
The TGA4514 provides a nominal 33.5 dBm of
output power at an input power level of 20 dBm
with a small signal gain of 18 dB. Nominal IMD3 is
31dBc at Pout/tone of 22 dBm.
The part is ideally suited for low cost markets such
as Point-to-Point Radio and Ka-band Sat-Com.
35
Psat @ Pin= 20dBm (dBm)
34
33
32
31
30
29
28
30
Bias Conditions: Vd = 6/7 V, Id = 1150 mA
Vd = 7 V
Vd = 6 V
31
32
33
34
35
Frequency (GHz)
36
37
Datasheet subject to change without notice.
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
July 2009 © Rev A
1
TGA4514
Table I
Absolute Maximum Ratings 1/
Symbol
Vd-Vg
Vd
Vg
Id
Ig
Pin
Tchannel
1/
Drain Voltage
Gate Voltage Range
Drain Current
Gate Current Range
Input Continuous Wave Power
Channel Temperature
Parameter
Drain to Gate Voltage
Value
13 V
8V
-5 to 0 V
2.5 A
-9 to 210 mA
27 dBm
200 °C
Notes
2/
2/
2/
These ratings represent the maximum operable values for this device. Stresses beyond those listed
under “Absolute Maximum Ratings” may cause permanent damage to the device and / or affect
device lifetime. These are stress ratings only, and functional operation of the device at these
conditions is not implied.
Combinations of supply voltage, supply current, input power, and output power shall not exceed the
maximum power dissipation listed in Table IV.
2/
Table II
Recommended Operating Conditions
Symbol
Vd
Id
Id_Drive
Vg
1/
Drain Voltage
Drain Current
Drain Current under RF Drive
Gate Voltage
Parameter 1/
Value
6V
1150 mA
1500 mA
-0.45 V
See assembly diagram for bias instructions.
2
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
July 2009 © Rev A
TGA4514
Table III
RF Characterization Table
Bias: Vd = 6 V, Id = 1150 mA, Vg = -0.45 V Typical
SYMBOL
Gain
IRL
ORL
Psat
P1dB
IMD3
PARAMETER
Small Signal Gain
Input Return Loss
Output Return Loss
Saturated Output Power @
Pin = 20dBm
Output Power @ 1dB Gain
Compression
IMD3 @ Pout/Tone = 22dBm,
Freq = 33GHz
TEST
CONDITIONS
F = 31 - 35 GHz
F = 31 - 35 GHz
F = 31 - 35 GHz
F = 31 - 35 GHz
F = 31 - 35 GHz
F = 31 - 35 GHz
NOMINAL
18
-7
-10
32.5
32
31
UNITS
dB
dB
dB
dBm
dBm
dBc
3
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
July 2009 © Rev A
TGA4514
Table IV
Power Dissipation and Thermal Properties
Parameter
Maximum Power Dissipation
Test Conditions
Tbaseplate = 70 °C
Value
Pd = 10 W
Tchannel = 199 °C
θjc
= 11.5 °C/W
Tchannel = 149 °C
Tm = 1.1E+6 Hrs
Thermal Resistance,
θjc
Vd = 6 V
Id = 1.15 A
Pd = 6.9 W
Tbaseplate = 70 ºC
Vd = 6 V
Id = 1.45 A
Pout = 32.5 dBm
Pd = 6.9 W
Tbaseplate = 70 ºC
30 Seconds
Thermal Resistance,
θjc
Under RF Drive @ 33GHz
θjc
= 11.5 °C/W
Tchannel = 149 °C
Tm = 1.1E+6 Hrs
Mounting Temperature
Storage Temperature
320 °C
-65 to 150 °C
Median Lifetime (Tm) vs. Channel Temperature
4
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
July 2009 © Rev A
TGA4514
Measured Data
22
Bias Conditions: Vd = 6 V, Id = 1150 mA, Room Temp.
20
18
Gain (dB)
16
14
12
10
28
29
30
31
32
33
34
35
36
37
38
Fre que ncy (GHz)
Bias Conditions: Vd = 6/7 V, Id = 1150 mA, Room Temp.
35
34
Psat @ Pin = 20dBm (dBm )
33
32
31
30
29
28
30
31
Vd = 7 V
Vd = 6 V
32
33
34
35
36
37
Frequency (GHz)
5
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
July 2009 © Rev A