74AHC00; 74AHCT00
Quad 2-input NAND gate
Rev. 04 — 28 April 2008
Product data sheet
1. General description
The 74AHC00; 74AHCT00 is a high-speed Si-gate CMOS device and is pin compatible
with Low-power Schottky TTL (LSTTL). It is specified in compliance with JEDEC
standard No. JESD7-A.
The 74AHC00; 74AHCT00 provides the quad 2-input NAND function.
2. Features
I
I
I
I
Balanced propagation delays
All inputs have Schmitt-trigger actions
Inputs accept voltages higher than V
CC
Input levels:
N
For 74AHC00: CMOS level
N
For 74AHCT00: TTL level
I
ESD protection:
N
HBM EIA/JESD22-A114E exceeds 2000 V
N
MM EIA/JESD22-A115-A exceeds 200 V
N
CDM EIA/JESD22-C101C exceeds 1000 V
I
Multiple package options
I
Specified from
−40 °C
to +85
°C
and from
−40 °C
to +125
°C
3. Ordering information
Table 1.
Ordering information
Package
Temperature range
74AHC00
74AHC00D
74AHC00PW
74AHC00BQ
−40 °C
to +125
°C
−40 °C
to +125
°C
−40 °C
to +125
°C
SO14
TSSOP14
plastic small outline package; 14 leads;
body width 3.9 mm
plastic thin shrink small outline package; 14 leads;
body width 4.4 mm
SOT108-1
SOT402-1
SOT762-1
Name
Description
Version
Type number
DHVQFN14 plastic dual in-line compatible thermal enhanced very
thin quad flat package; no leads; 14 terminals;
body 2.5
×
3
×
0.85 mm
NXP Semiconductors
74AHC00; 74AHCT00
Quad 2-input NAND gate
Table 1.
Ordering information
…continued
Package
Temperature range
Name
SO14
TSSOP14
Description
plastic small outline package; 14 leads;
body width 3.9 mm
plastic thin shrink small outline package; 14 leads;
body width 4.4 mm
Version
SOT108-1
SOT402-1
SOT762-1
Type number
74AHCT00
74AHCT00D
74AHCT00PW
74AHCT00BQ
−40 °C
to +125
°C
−40 °C
to +125
°C
−40 °C
to +125
°C
DHVQFN14 plastic dual in-line compatible thermal enhanced very
thin quad flat package; no leads; 14 terminals;
body 2.5
×
3
×
0.85 mm
4. Functional diagram
1
1 1A
2 1B
4 2A
5 2B
9 3A
10 3B
12 4A
13 4B
1Y 3
2
4
2Y 6
5
9
10
12
13
mna212
&
3
&
6
3Y 8
&
8
A
4Y 11
&
mna246
11
B
Y
mna211
Fig 1.
Logic symbol
Fig 2.
IEC logic symbol
Fig 3.
Logic diagram (one gate)
5. Pinning information
5.1 Pinning
terminal 1
index area
1A
1B
1Y
2A
2B
2Y
GND
1
2
3
4
5
6
7
14 V
CC
13 4B
12 4A
1B
1Y
2A
2B
2Y
2
3
4
5
6
7
GND
3Y
8
14 V
CC
13 4B
12 4A
11 4Y
10 3B
9
3A
001aac939
00
11 4Y
10 3B
9
8
3A
3Y
GND
(1)
001aac938
Transparent top view
(1) The die substrate is attached to this pad using
conductive die attach material. It can not be used as a
supply pin or input.
Fig 4.
Pin configuration SO14 and TSSOP14
Fig 5.
Pin configuration DHVQFN14
74AHC_AHCT00_4
1
1A
00
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 04 — 28 April 2008
2 of 14
NXP Semiconductors
74AHC00; 74AHCT00
Quad 2-input NAND gate
5.2 Pin description
Table 2.
Symbol
1A
1B
1Y
2A
2B
2Y
GND
3Y
3A
3B
4Y
4A
4B
V
CC
Pin description
Pin
1
2
3
4
5
6
7
8
9
10
11
12
13
14
Description
data input
data input
data output
data input
data input
data output
ground (0 V)
data output
data input
data input
data output
data input
data input
supply voltage
6. Functional description
Table 3.
Input
nA
L
X
H
[1]
Function selection
[1]
Output
nB
X
L
H
nY
H
H
L
H = HIGH voltage level; L = LOW voltage level; X = don’t care.
74AHC_AHCT00_4
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 04 — 28 April 2008
3 of 14
NXP Semiconductors
74AHC00; 74AHCT00
Quad 2-input NAND gate
7. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol
V
CC
V
I
I
IK
I
OK
I
O
I
CC
I
GND
T
stg
P
tot
[1]
[2]
Parameter
supply voltage
input voltage
input clamping current
output clamping current
output current
supply current
ground current
storage temperature
total power dissipation
Conditions
Min
−0.5
−0.5
Max
+7.0
+7.0
-
+20
+25
+75
-
+150
500
Unit
V
V
mA
mA
mA
mA
mA
°C
mW
V
I
<
−0.5
V
V
O
<
−0.5
V or V
O
> V
CC
+ 0.5 V
V
O
=
−0.5
V to (V
CC
+ 0.5 V)
[1]
[1]
−20
−20
−25
-
−75
−65
T
amb
=
−40 °C
to +125
°C
[2]
-
The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
For SO14 packages: above 70
°C
the value of P
tot
derates linearly at 8 mW/K.
For TSSOP14 packages: above 60
°C
the value of P
tot
derates linearly at 5.5 mW/K.
For DHVQFN14 packages: above 60
°C
the value of P
tot
derates linearly at 4.5 mW/K.
8. Recommended operating conditions
Table 5.
Symbol
74AHC00
V
CC
V
I
V
O
T
amb
∆t/∆V
74AHCT00
V
CC
V
I
V
O
T
amb
∆t/∆V
supply voltage
input voltage
output voltage
ambient temperature
input transition rise and fall rate
V
CC
= 4.5 V to 5.5 V
4.5
0
0
−40
-
5.0
-
-
+25
-
5.5
5.5
V
CC
+125
20
V
V
V
°C
ns/V
supply voltage
input voltage
output voltage
ambient temperature
input transition rise and fall rate
V
CC
= 3.0 V to 3.6 V
V
CC
= 4.5 V to 5.5 V
2.0
0
0
−40
-
-
5.0
-
-
+25
-
-
5.5
5.5
V
CC
+125
100
20
V
V
V
°C
ns/V
ns/V
Operating conditions
Parameter
Conditions
Min
Typ
Max
Unit
74AHC_AHCT00_4
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 04 — 28 April 2008
4 of 14
NXP Semiconductors
74AHC00; 74AHCT00
Quad 2-input NAND gate
9. Static characteristics
Table 6.
Static characteristics
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
74AHC00
V
IH
HIGH-level input
voltage
V
CC
= 2.0 V
V
CC
= 3.0 V
V
CC
= 5.5 V
V
IL
LOW-level input
voltage
V
CC
= 2.0 V
V
CC
= 3.0 V
V
CC
= 5.5 V
V
OH
HIGH-level
output voltage
V
I
= V
IH
or V
IL
I
O
=
−50 µA;
V
CC
= 2.0 V
I
O
=
−50 µA;
V
CC
= 3.0 V
I
O
=
−50 µA;
V
CC
= 4.5 V
I
O
=
−4.0
mA; V
CC
= 3.0 V
I
O
=
−8.0
mA; V
CC
= 4.5 V
V
OL
LOW-level output V
I
= V
IH
or V
IL
voltage
I
O
= 50
µA;
V
CC
= 2.0 V
I
O
= 50
µA;
V
CC
= 3.0 V
I
O
= 50
µA;
V
CC
= 4.5 V
I
O
= 4.0 mA; V
CC
= 3.0 V
I
O
= 8.0 mA; V
CC
= 4.5 V
I
I
I
CC
C
I
V
IH
V
IL
V
OH
input leakage
current
supply current
V
I
= 5.5 V or GND;
V
CC
= 0 V to 5.5 V
V
I
= V
CC
or GND; I
O
= 0 A;
V
CC
= 5.5 V
1.9
2.9
4.4
2.58
3.94
-
-
-
-
-
-
-
-
2.0
-
2.0
3.0
4.5
-
-
0
0
0
-
-
-
-
3.0
-
-
-
-
-
-
-
0.1
0.1
0.1
0.36
0.36
0.1
2.0
10
-
0.8
1.9
2.9
4.4
2.48
3.80
-
-
-
-
-
-
-
-
2.0
-
-
-
-
-
-
0.1
0.1
0.1
0.44
0.44
1.0
20
10
-
0.8
1.9
2.9
4.4
2.40
3.70
-
-
-
-
-
-
-
-
2.0
-
-
-
-
-
-
0.1
0.1
0.1
0.55
0.55
2.0
40
10
-
0.8
V
V
V
V
V
V
V
V
V
V
µA
µA
pF
V
V
1.5
2.1
3.85
-
-
-
-
-
-
-
-
-
-
-
-
0.5
0.9
1.65
1.5
2.1
3.85
-
-
-
-
-
-
0.5
0.9
1.65
1.5
2.1
3.85
-
-
-
-
-
-
0.5
0.9
1.65
V
V
V
V
V
V
Conditions
Min
25
°C
Typ Max
−40 °C
to +85
°C −40 °C
to +125
°C
Unit
Min
Max
Min
Max
input capacitance V
I
= V
CC
or GND
HIGH-level input
voltage
LOW-level input
voltage
HIGH-level
output voltage
V
CC
= 4.5 V to 5.5 V
V
CC
= 4.5 V to 5.5 V
V
I
= V
IH
or V
IL
; V
CC
= 4.5 V
I
O
=
−50 µA
I
O
=
−8.0
mA
74AHCT00
4.4
3.94
-
-
-
4.5
-
0
-
-
-
-
0.1
0.36
0.1
4.4
3.80
-
-
-
-
-
0.1
0.44
1.0
4.4
3.70
-
-
-
-
-
0.1
0.55
2.0
V
V
V
V
µA
V
OL
LOW-level output V
I
= V
IH
or V
IL
; V
CC
= 4.5 V
voltage
I
O
= 50
µA
I
O
= 8.0 mA
input leakage
current
V
I
= 5.5 V or GND;
V
CC
= 0 V to 5.5 V
I
I
74AHC_AHCT00_4
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 04 — 28 April 2008
5 of 14
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