MBRB4030G,
NRVBB4030T4G
Preferred Device
SWITCHMODE
Power Rectifier
These state−of−the−art devices use the Schottky Barrier principle
with a proprietary barrier metal.
Features
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Guardring for Stress Protection
Maximum Die Size
175C Operating Junction Temperature
Short Heat Sink Tab Manufactured
−
Not Sheared
AEC−Q101 Qualified and PPAP Capable
NRVBB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
All Packages are Pb−Free*
Mechanical Characteristics:
SCHOTTKY BARRIER
RECTIFIER
40 AMPERES, 30 VOLTS
Case: Epoxy, Molded, Epoxy Meets UL 94 V−0
Weight: 1.7 Grams (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads Readily Solderable
Device Meets MSL1 Requirements
ESD Ratings:
Machine Model = C (> 400 V)
Human Body Model = 3B (> 8000 V)
D
2
PAK
CASE 418B
STYLE 3
1
4
3
MARKING DIAGRAM
AY WW
B4030G
AKA
A
Y
WW
B4030
G
AKA
= Assembly Location
= Year
= Work Week
= Device Code
= Pb−Free Package
= Diode Polarity
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred
devices are recommended choices for future use
and best overall value.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2012
January, 2012
−
Rev. 7
1
Publication Order Number:
MBRB4030/D
MBRB4030G, NRVBB4030T4G
MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(At Rated V
R
) T
C
= +115C (Note 1)
Peak Repetitive Forward Current
(At Rated V
R
, Square Wave, 20 kHz), T
C
= +112C
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
Peak Repetitive Reverse Surge Current (2.0
ms,
1.0 kHz)
Storage Temperature Range
Operating Junction Temperature Range (Note 2)
Voltage Rate of Change (Rated V
R
)
Reverse Energy (Unclamped Inductive Surge), (T
C
= 25C, L = 3.0 mH)
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
I
FRM
I
FSM
I
RRM
T
stg
T
J
dv/dt
W
Value
30
Unit
V
40
80
300
2.0
−65
to +175
−65
to +175
10,000
600
A
A
A
A
C
C
V/ms
mJ
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Rating applies when pins 1 and 3 are connected.
2. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dP
D
/dT
J
< 1/R
qJA
.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient (Note 3)
3. Rating applies when surface mounted on the miniumum pad size recommended.
Symbol
R
qJC
R
qJA
Value
1.0
50
Unit
C/W
C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage (Notes 4 and 5), per Device
(I
F
= 20 A, T
C
= + 25C)
(I
F
= 20 A, T
C
= +150C)
(I
F
= 40 A, T
C
= + 25C)
(I
F
= 40 A, T
C
= +150C)
Maximum Instantaneous Reverse Current (Note 5), per Device
(Rated DC Voltage, T
C
= + 25C)
(Rated DC Voltage, T
C
= +125C)
4. Rating applies when pins 1 and 3 are connected.
5. Pulse Test: Pulse Width = 300
ms,
Duty Cycle
2.0%
Symbol
V
F
Value
0.46
0.34
0.55
0.45
0.35
150
Unit
V
I
R
mA
ORDERING INFORMATION
Device
MBRB4030G
MBRB4030T4G
NRVBB4030T4G
Package
D
2
PAK
(Pb−Free)
D
2
PAK
(Pb−Free)
D
2
PAK
(Pb−Free)
Shipping
†
50 Units / Rail
800 Units / Tape & Reel
800 Units / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2
MBRB4030G, NRVBB4030T4G
ELECTRICAL CHARACTERISTICS
I F, INSTANTANEOUS FORWARD CURRENT (A)
(PIN 1 SHORTED TO PIN 3)
T
J
= 150C
I F, INSTANTANEOUS FORWARD CURRENT (A)
(PIN 1 SHORTED TO PIN 3)
100
100
T
J
= 150C
10
10
1.0
100C
25C
1.0
100C
25C
0.1
0
0.1
0.2
0.4
0.6
0.3
0.5
V
F
, INSTANTANEOUS VOLTAGE (V)
0.7
0.8
0.1
0
0.1
0.4
0.2
0.3
0.5
V
F
, INSTANTANEOUS VOLTAGE (V)
0.6
0.7
Figure 1. Maximum Forward Voltage
Figure 2. Typical Forward Voltage
1.0
I R , REVERSE CURRENT (A)
T
J
= 150C
1.0
T
J
= 150C
0.1
100C
0.01
I R , REVERSE CURRENT (A)
0.1
0.01
100C
10
-3
10
-4
10
-5
10
-3
25C
25C
10
-4
10
-5
0
5
20
10
15
V
R
, REVERSE VOLTAGE (V)
25
30
0
5
15
20
10
V
R
, REVERSE VOLTAGE (V)
25
30
Figure 3. Maximum Reverse Current
Figure 4. Typical Reverse Current
10
4
T
J
= 25C
C, CAPACITANCE (pF)
TYPICAL
MAXIMUM
1000
1
10
V
R
, REVERSE VOLTAGE (V)
Figure 5. Maximum and Typical Capacitance
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3
MBRB4030G, NRVBB4030T4G
ELECTRICAL CHARACTERISTICS
70
I F(AV), AVERAGE FORWARD CURRENT (A)
(PIN 1 SHORTED TO PIN 3)
I F(AV), AVERAGE FORWARD CURRENT (A)
(PIN 1 SHORTED TO PIN 3)
60
50
40
30
20
10
0
100
110
10
SQUARE WAVE
DC
(RESISTIVE LOAD)
I
PK
= 5.0 (CAPACITIVE
I
AV
LOAD)
20
DC
SQUARE WAVE
15
(RESISTIVE LOAD)
R
qJA
= 25C/W
SURFACE MOUNTED ON
MINIMUM RECOMMENDED
PAD SIZE
I
PK
= 5.0 (CAPACITIVE
I
AV
LOAD)
10
10
5
20
0
20
120
140
130
T
C
, CASE TEMPERATURE (C)
150
50
100
T
A
, AMBIENT TEMPERATURE (C)
150
Figure 6. Current Derating, Infinite Heatsink
Figure 7. Current Derating
PF(AV), AVERAGE FORWARD POWER DISSIPATION (WATTS)
(PIN 1 SHORTED TO PIN 3)
12
I F(AV), AVERAGE FORWARD CURRENT (A)
(PIN 1 SHORTED TO PIN 3)
10
8
6
4
2
0
10
DC
(RESISTIVE LOAD)
SQUARE WAVE
R
qJA
= 50C/W
50
T
J
= 150C
40
(RESISTIVE LOAD)
I
PK
= 5.0 (CAPACITIVE
I
AV
LOAD)
10
20
20
DC
10
SQUARE WAVE
I
PK
= 5.0 (CAPACITIVE
I
AV
LOAD)
30
20
0
50
100
T
A
, AMBIENT TEMPERATURE (C)
150
0
0
10
30
50
40
60
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
20
70
80
Figure 8. Current Derating, Free Air
Figure 9. Forward Power Dissipation
1.0
R(t), EFFECTIVE TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
SINGLE PULSE
0.1
P
pk
t
p
t
1
P
pk
TIME
DUTY CYCLE, D = t
p
/t
1
PEAK POWER, P
pk
, is peak of an
equivalent square power pulse.
DT
JL
= P
pk
R
qJL
[D + (1 - D)
r(t
1
+ t
p
) + r(t
p
) - r(t
1
)]
where
DT
JL
= the increase in junction temperature above the lead temperature
r(t) = normalized value of transient thermal resistance at time, t, for example,
r(t) =
r(t
1
+ t
p
) = normalized value of transient thermal resistance at time, t
1
+ t
p
.
0.01
0.1
1.0
t, TIME (ms)
10
100
1000
Figure 10. Thermal Response
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4
MBRB4030G, NRVBB4030T4G
PACKAGE DIMENSIONS
D
2
PAK 3
CASE 418B−04
ISSUE K
C
E
−B−
4
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 418B−01 THRU 418B−03 OBSOLETE,
NEW STANDARD 418B−04.
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
S
V
INCHES
MIN
MAX
0.340 0.380
0.380 0.405
0.160 0.190
0.020 0.035
0.045 0.055
0.310 0.350
0.100 BSC
0.080
0.110
0.018 0.025
0.090
0.110
0.052 0.072
0.280 0.320
0.197 REF
0.079 REF
0.039 REF
0.575 0.625
0.045 0.055
MILLIMETERS
MIN
MAX
8.64
9.65
9.65 10.29
4.06
4.83
0.51
0.89
1.14
1.40
7.87
8.89
2.54 BSC
2.03
2.79
0.46
0.64
2.29
2.79
1.32
1.83
7.11
8.13
5.00 REF
2.00 REF
0.99 REF
14.60 15.88
1.14
1.40
V
W
1
2
3
S
A
−T−
SEATING
PLANE
K
G
D
3 PL
M
J
H
T B
M
W
0.13 (0.005)
VARIABLE
CONFIGURATION
ZONE
L
M
M
R
N
U
L
M
P
L
STYLE 3:
PIN 1. ANODE
2. CATHODE
3. ANODE
4. CATHODE
F
VIEW W−W
1
F
VIEW W−W
2
F
VIEW W−W
3
SOLDERING FOOTPRINT*
10.49
8.38
16.155
3.504
1.016
5.080
PITCH
DIMENSIONS: MILLIMETERS
2X
2X
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
5
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