SUP/SUB75P03-08
Vishay Siliconix
P-Channel 30-V (D-S), 175_C MOSFET
PRODUCT SUMMARY
V
(BR)DSS
(V)
–30
r
DS(on)
(W)
0.008
I
D
(A)
–75
a
TO-220AB
S
TO-263
G
DRAIN connected to TAB
G
G D S
Top View
SUP75P03-08
SUB75P03-08
P-Channel MOSFET
D S
Top View
D
ABSOLUTE MAXIMUM RATINGS (T
C
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Gate-Source Voltage
Continuous Drain Current
(T
J
= 175_C)
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energy
b
Power Dissipation
Operating Junction and Storage Temperature Range
L = 0.1 mH
T
C
= 25_C (TO-220AB and TO-263)
T
A
= 25_C (TO-263)
c
P
D
T
J
, T
stg
T
C
= 25_C
T
C
= 125_C
I
D
I
DM
I
AR
E
AR
Symbol
V
GS
Limit
"20
–75
a
–65
–200
–75
280
250
d
3.7
–55 to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
PCB Mount (TO-263)
c
Junction-to-Ambient
Junction-to-Case
Notes:
a. Package limited.
b. Duty cycle
v
1%.
c. When mounted on 1” square PCB (FR-4 material).
d. See SOA curve for voltage derating.
Document Number: 70772
S-05111—Rev. D, 10-Dec-99
www.vishay.com
Free Air (TO-220AB)
Symbol
R
thJA
R
thJA
R
thJC
Limit
40
62.5
0.6
Unit
_C/W
1
SUP/SUB75P03-08
Vishay Siliconix
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V
(BR)DSS
V
GS(th)
I
GSS
V
GS
= 0 V, I
D
= –250
mA
V
DS
= V
GS
, I
D
= –250
mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= –30 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= –30 V, V
GS
= 0 V, T
J
= 125_C
V
DS
= –30 V, V
GS
= 0 V, T
J
= 175_C
On-State Drain Current
a
I
D(on)
V
DS
= –5 V, V
GS
= –10 V
V
GS
= –10 V, I
D
= –30 A
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= –10 V, I
D
= –30 A, T
J
= 125_C
V
GS
= –10 V, I
D
= –30 A, T
J
= 175_C
Forward Transconductance
a
g
fs
V
DS
= –15 V, I
D
= –30 A
30
–120
0.008
0.012
0.015
S
W
–30
–1
–3
"100
–1
–50
–150
A
m
mA
V
nA
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamic
b
Input Capacitance
Output Capacitance
Reversen Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
DD
= –15 V, R
L
= 0.2
W
I
D
]
–75 A, V
GEN
= –10 V, R
G
= 2.5
W
V
DS
= –15 V, V
GS
= –10 V, I
D
= –75 A
V
GS
= 0 V, V
DS
= –25 V, f = 1 MHz
6900
1850
570
115
30
10
10
16
140
80
20
30
200
140
ns
140
nC
pF
Source-Drain Diode Ratings and Characteristics (T
C
= 25_C)
b
Continuous Current
Pulsed Current
Forward Voltage
a
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
I
s
I
SM
V
SD
t
rr
I
RM(REC)
Q
rr
I
F
= –75 A, di/dt = 100 A/ms
m
I
F
= –75 A, V
GS
= 0 V
–1.1
60
2.5
0.008
–75
A
–200
–1.4
100
5
0.016
V
ns
A
mC
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
c. Independent of operating temperature.
www.vishay.com
2
Document Number: 70772
S-05111—Rev. D, 10-Dec-99
SUP/SUB75P03-08
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
200
V
GS
= 10, 9, 8, 7, 6 V
160
I D – Drain Current (A)
I D – Drain Current (A)
4V
120
150
T
C
= –55_C
25_C
Transfer Characteristics
120
5V
80
90
125_C
60
40
3V
0
0
2
4
6
8
10
30
0
0.0
1.5
3.0
4.5
6.0
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Transconductance
100
T
C
= –55_C
80
g fs – Transconductance (S)
25_C
r DS(on)– On-Resistance (
W
)
0.006
0.008
On-Resistance vs. Drain Current
V
GS
= 10 V
125_C
60
V
GS
= 20 V
0.004
40
0.002
20
0
0
15
30
45
60
0.000
0
20
40
60
80
100
V
GS
– Gate-to-Source Voltage (V)
I
D
– Drain Current (A)
Capacitance
8500
C
iss
V GS – Gate-to-Source Voltage (V)
16
6500
V
DS
= 15 V
I
D
= 75 A
20
Gate Charge
C – Capacitance (pF)
12
4500
8
C
oss
2500
C
rss
4
500
0
6
12
18
24
30
0
0
30
60
90
120
150
180
210
V
DS
– Drain-to-Source Voltage (V)
Q
g
– Total Gate Charge (nC)
Document Number: 70772
S-05111—Rev. D, 10-Dec-99
www.vishay.com
3
SUP/SUB75P03-08
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
1.8
V
GS
= 10 V
I
D
= 30 A
r DS(on)– On-Resistance (
W
)
(Normalized)
I S – Source Current (A)
1.5
100
Source-Drain Diode Forward Voltage
T
J
= 150_C
T
J
= 25_C
10
1.2
0.9
0.6
–50
1
–25
0
25
50
75
100
125
150
175
0.0
0.3
0.6
0.9
1.2
1.5
T
J
– Junction Temperature (_C)
V
SD
– Source-to-Drain Voltage (V)
THERMAL RATINGS
Maximum Avalanche and Drain Current
vs. Case Temperature
100
Safe Operating Area
80
I D – Drain Current (A)
I D – Drain Current (A)
100
Limited
by r
DS(on)
100
ms
60
1 ms
10
10 ms
T
C
= 25_C
Single Pulse
100 ms
dc, 1 s
40
20
0
0
25
50
75
100
125
150
175
T
C
– Case Temperature (_C)
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
1
0.1
1.0
10.0
V
DS
– Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
–5
10
–4
10
–3
10
–2
10
–1
1
3
Square Wave Pulse Duration (sec)
Document Number: 70772
S-05111—Rev. D, 10-Dec-99
www.vishay.com
4
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
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