Super Low VF SMD Schottky Barrier Rectifiers
CDBA120SL-G
Reverse Voltage: 20 Volts
Forward Current: 1.0 Amp
RoHS Device
Features
-Low Profile surface mount applications
in order to optimize board space.
-Low power loss, high efficiency.
-High current capability, low forward voltage drop.
-High surge capability.
-Guardring for overvoltage protection.
-Ultra high-speed switching.
-Silicon epitaxial planar chip,metal silicon junction.
0.062 (1.60)
0.055 (1.40)
SMA-F
0.114 (2.90)
0.098 (2.50)
0.181 (4.60)
0.157 (4.00)
0.012 (0.30)
0.006 (0.15)
0.096 (2.44)
0.079 (2.00)
Mechanical data
-Epoxy: UL94-V0 rate flame retardant.
-Case: Molded plastic, DO-214AC / SMA-F
-Terminals: Solder plated, solderable per MIL-STD-750,
method 2026.
-Polarity: Indicated by cathode band.
-Weight: 0.064 grams (Approx.)
0.060 (1.52)
0.030 (0.78)
0.008(0.20)
0.002(0.05)
0.208 (5.28)
0.189 (4.80)
Dimensions in inches and (millimeter)
Circuit Diagram
1
2
Maximum Ratings and Electrical Characteristics
Ratings at Ta=25°C unless otherwise noted.
Single phase, half wave, 60Hz, resistive or inductive loaded.
For capacitive load, derate current by 20% .
Parameter
Max. Repetitive peak reverse voltage
Max. RMS voltage
Max. Continuous reverse voltage
Max. Forward voltage @I
F
=1.0A
Operating Temperature
Symbol
V
RRM
V
RMS
V
R
V
F
T
J
CDBA120SL-G
20
14
20
0.31
-55 to +100
Units
V
V
V
V
°C
Parameter
Forward rectified current
Forward surge current
Reverse current
See Fig.1
Conditions
Symbol
I
O
I
FSM
I
R
I
R
R
θJA
C
J
T
STG
MIN.
TYP.
MAX.
1.0
30
1.0
20
Units
A
A
mA
mA
°C/W
pF
8.3ms single half sine-wave superimposed
on rate load (JEDEC method)
V
R
=V
RRM
T
A
=25°C
V
R
=V
RRM
T
A
=100°C
Thermal resistance
Junction to ambient
70
160
-55
+150
Diode junction capacitance f=1MH
Z
and applied 4V DC reverse Voltage
Storage temperature
°C
REV: A
Company reserves the right to improve product design , functions and reliability without notice.
QW-BL015
Page 1
Comchip Technology CO., LTD.
Super Low VF SMD Schottky Barrier Rectifiers
RATING AND CHARACTERISTIC CURVES (CDBA120SL-G)
Fig.1 - Typical Forward Current
Derating Curve
Instantaneous Forward Current, (A)
Fig.2 - Typical Forward Characteristics
50
10
Average Forward Current, (A)
1.2
1.0
0.8
0.6
0.4
0.2
0
1.0
0.1
T
J
=25°C
Pulse Width 300us
1% Duty Cycle
0
20
40
60
80
100 120 140 160
0.01
0.1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
Lead Temperature, (°C)
Forward Voltage, (V)
Fig.3 - Maximum Non-repetitive
Forward Surge Current
30
Fig.4 - Typical Junction Capacitance
350
300
250
200
150
100
50
Peak Forward Surge Current, (A)
T
J
=25°C
8.3ms single half sine
wave, JEDEC method
20
10
0
Junction Capacitance, (pF)
1
10
100
0
0.01
0.1
1
10
100
Number of Cycles at 60Hz
Reverse Voltage, (V)
Fig.5 - Typical Reverse Characteristics
1000
Reverse Leakage Current, (mA)
100
10
T
J
=100 °C
1.0
T
J
=25 °C
0.1
0
20
40
60
80
100
120
140
Percent of Rated Peak Reverse Voltage, (%)
REV: A
QW-BL015
Page 2
Comchip Technology CO., LTD.
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