Si1069X
Vishay Siliconix
P-Channel 20 V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
- 20
R
DS(on)
()
0.184 at V
GS
= - 4.5 V
0.268 at V
GS
= - 2.5 V
I
D
(A)
- 0.94
- 0.78
Q
g
(Typ.)
4.23
FEATURES
•
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET
®
Power MOSFET
• 100 % R
g
Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Load Switch for Portable Devices
SC-89 (6-LEADS)
S
D
1
6
D
Marking Code
D
2
5
D
Y
XX
YY
G
Lot Traceability
and Date Code
G
3
4
S
Part # Code
Top
View
Ordering Information:
Si1069X-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25 °C
T
A
= 25 °C
T
A
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
Limit
- 20
± 12
- 0.94
b, c
- 0.75
b, c
-8
- 0.2
b, c
0.236
b, c
0.151
b, c
- 55 to 150
W
°C
A
Unit
V
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a, b
Notes:
a. Based on T
A
= 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
t
5
s
Steady State
Symbol
R
thJA
Typical
440
540
Maximum
530
650
Unit
°C/W
Document Number: 70442
S10-2542-Rev. C, 08-Nov-10
www.vishay.com
1
Si1069X
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Drain-Source Body Diode Characteristics
Pulse Diode Forward Current
a
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= - 0.64 A, dI/dt = 100 A/µs
I
S
= - 0.64 A
- 0.8
19
6.65
7
12
8
- 1.2
28.5
10
ns
A
V
nC
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
V
DD
= - 10 V, R
L
= 13.3
I
D
- 0.75 A, V
GEN
= - 4.5 V, R
g
= 1
f = 1 MHz
V
DS
= - 10 V, V
GS
= - 5 V, I
D
= - 0.94 A
V
DS
= - 10 V, V
GS
= - 4.5 V, I
D
= - 0.94 A
V
DS
= - 10 V, V
GS
= 0 V, f = 1 MHz
308
78
59
4.57
4.23
0.71
1.67
9
19
31
23
7
13.5
28.5
47
34.5
10.5
ns
6.86
6.35
nC
pF
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
GS
= 0 V, I
D
= - 250 µA
I
D
= - 250 µA
V
DS
= V
GS
, I
D
= - 250 µA
V
DS
= 0 V, V
GS
= ± 12 V
V
DS
= - 20 V, V
GS
= 0 V
V
DS
= - 20 V, V
GS
= 0 V, T
J
= 85 °C
V
DS
=
5 V, V
GS
= - 4.5 V
V
GS
= - 4.5 V, I
D
= - 0.94 A
V
GS
= - 2.5 V, I
D
= - 0.78 A
V
DS
= - 10 V, I
D
= - 0.94 A
-8
0.153
0.218
4
0.184
0.268
- 0.6
- 20
- 16.7
2.95
- 1.5
± 100
-1
- 10
V
mV/°C
V
nA
nA
µA
A
S
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 70442
S10-2542-Rev. C, 08-Nov-10
Si1069X
Vishay Siliconix
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
8
V
GS
= 5
V
thru 3.5
V
V
GS
= 3
V
3.0
2.4
6
I
D
- Drain Current (A)
V
GS
= 2.5
V
4
I
D
- Drain Current (A)
1.8
1.2
T
C
= 25 °C
0.6
T
C
= 125 °C
T
C
= - 55 °C
2
V
GS
= 2
V
0
0
1
2
3
4
5
0.0
0.0
0.6
1.2
1.8
2.4
3.0
V
DS
- Drain-to-Source
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
0.5
600
Transfer Characteristics
R
DS(on)
- On-Resistance (Ω)
0.4
C - Capacitance (pF)
500
400
C
iss
300
0.3
V
GS
= 2.5
V
0.2
V
GS
= 4.5
V
0.1
200
C
oss
100
C
rss
0.0
0
2
4
I
D
- Drain Current (A)
6
8
0
0
4
8
12
16
20
V
DS
- Drain-to-Source
Voltage
(V)
On-Resistance vs. Drain Current
5
I
D
= 0.94 A
V
GS
- Gate-to-Source Voltage (V)
4
V
DS
= 10 V
3
V
DS
= 16 V
2
R
DS(on)
- On-Resistance
(Normalized)
1.4
1.6
Capacitance
V
GS
= 4.5
V,
I
D
= 0.94 A
1.2
V
GS
= 2.5
V,
I
D
= 0.78 A
1.0
1
0.8
0
0
1
2
3
4
5
0.6
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 70442
S10-2542-Rev. C, 08-Nov-10
www.vishay.com
3
Si1069X
Vishay Siliconix
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
10
0.4
I
D
= 0.94 A
R
DS(on)
- On-Resistance (Ω)
I
S
- Source Current (A)
0.3
1
0.2
T
A
= 125 °C
T
J
= 150 °C
0.1
T
J
= 25 °C
0.1
T
A
= 25 °C
0.01
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.0
0
1
2
3
4
5
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source
Voltage
(V)
Source-Drain Diode Forward Voltage
1.3
On-Resistance vs. Gate-to-Source Voltage
5
1.2
I
D
= 250
µA
1.1
V
GS(th)
(V)
Po
w
er (
W
)
- 25
0
25
50
75
100
125
150
4
3
1.0
2
0.9
0.8
1
0.7
- 50
0
0.01
0.1
1
Time (s)
10
100
1000
T
J
- Temperature (°C)
Threshold Voltage
10
Limited
by
R
DS(on)
*
Single Pulse Power
10 ms
100 ms
1s
10 s
I
D
- Drain Current (A)
1
0.1
DC
0.01
T
A
= 25 °C
Single Pulse
0.001
0.1
*
V
GS
BVDSS Limited
1
10
100
V
DS
- Drain-to-Source
Voltage
(V)
minimum
V
GS
at
which
R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
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Document Number: 70442
S10-2542-Rev. C, 08-Nov-10
Si1069X
Vishay Siliconix
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
1
Duty Cycle = 0.5
N
ormalized Effecti
v
e Transient
Thermal Impedance
0.1
0.2
0.1
0.05
0.01
0.02
P
DM
t
1
Notes:
0.001
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 540 °C/W
t
1
t
2
Single Pulse
0.0001
10
-4
10
-3
10
-2
10
-1
1
10
3. T
JM
- T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
100
1000
Square
Wave
Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
www.vishay.com/ppg?70442.
Document Number: 70442
S10-2542-Rev. C, 08-Nov-10
www.vishay.com
5
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