Si4836DY

Vishay Siliconix

N-Channel 12-V (D-S) MOSFET

PRODUCT SUMMARY

V

DS

(V)

12

R

DS(on)

(Ω)

0.003 at V

GS

= 4.5 V

0.004 at V

GS

= 2.5 V

0.005 at V

GS

= 1.8 V

I

D

(A)

25

22

19

FEATURES

•

Halogen-free According to IEC 61249-2-21

Available

• TrenchFET

®

Power MOSFET

• PWM Optimized

• 100 % R

g

Tested

APPLICATIONS

• Low Voltage Synchronous Rectification

• Low Voltage LDO Pass Transistor

D

SO-8

S

G

1

2

3

4

Top View

S

Ordering Information:

Si4836DY-T1-E3 (Lead (Pb)-free)

Si4836DY-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFET

8

7

6

5

D

G

ABSOLUTE MAXIMUM RATINGS

T

A

= 25 °C, unless otherwise noted

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

J

= 150 °C)

a

Pulsed Drain Current (10 µs Pulse Width)

Continuous Source Current (Diode Conduction)

a

Maximum Power Dissipation

a

Operating Junction and Storage Temperature Range

T

A

= 25 °C

T

A

= 70 °C

T

A

= 25 °C

T

A

= 70 °C

Symbol

V

DS

V

GS

I

D

I

DM

I

S

P

D

T

J

, T

stg

2.9

3.5

2.2

- 55 to 150

25

20

60

1.3

1.6

1

W

°C

10 s

12

±8

17

13

A

Steady State

Unit

V

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient

a

Maximum Junction-to-Foot (Drain)

Notes:

a. Surface Mounted on 1" x 1" FR4 board.

t

≤

10 s

Steady State

Symbol

R

thJA

R

thJF

Typical

29

67

13

Maximum

35

80

16

°C/W

Unit

Document Number: 71692

S09-0221-Rev. E, 09-Feb-09

www.vishay.com

1

Si4836DY

Vishay Siliconix

SPECIFICATIONS

T

J

= 25 °C, unless otherwise noted

Parameter

Static

Gate Threshold Voltage

Gate-Body Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

a

Drain-Source On-State Resistance

a

Forward Transconductance

a

Diode Forward Voltage

a

Dynamic

b

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Gate Resistance

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Source-Drain Reverse Recovery Time

Q

g

Q

gs

Q

gd

R

g

t

d(on)

t

r

t

d(off)

t

f

t

rr

I

F

= 2.9 A, dI/dt = 100 A/µs

V

DD

= 6 V, R

L

= 6

Ω

I

D

≅

1 A, V

GEN

= 4.5 V, R

g

= 6

Ω

1.0

V

DS

= 6 V, V

GS

= 4.5 V, I

D

= 25 A

51

6.6

9.1

1.6

35

41

190

115

60

2.7

55

65

290

175

90

ns

Ω

75

nC

V

GS(th)

I

GSS

I

DSS

I

D(on)

R

DS(on)

g

fs

V

SD

V

DS

= V

GS

, I

D

= 250 µA

V

DS

= 0 V, V

GS

= ± 8 V

V

DS

= 9.6 V, V

GS

= 0 V

V

DS

= 9.6 V, V

GS

= 0 V, T

J

= 55 °C

V

DS

≥

5 V, V

GS

= 4.5 V

V

GS

= 4.5 V, I

D

= 25 A

V

GS

= 2.5 V, I

D

= 22 A

V

GS

= 1.8 V, I

D

= 19 A

V

DS

= 6 V, I

D

= 25 A

I

S

= 2.9 A, V

GS

= 0 V

30

0.0025

0.0031

0.004

80

0.56

1.1

0.003

0.004

0.005

S

V

Ω

0.40

± 100

1

5

V

nA

µA

A

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Notes:

a. Pulse test; pulse width

≤

300 µs, duty cycle

≤

2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS

25 °C, unless otherwise noted

60

V

GS

= 5 V thru 1.5 V

50

I

D

- Drain Current (A)

I

D

- Drain Current (A)

50

60

40

30

20

T

C

= 125 °C

25 °C

- 55 °C

10

1V

0

1

2

3

4

5

10

0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

V

DS

- Drain-to-Source Voltage (V)

V

GS

- Gate-to-Source Voltage (V)

Output Characteristics

Transfer Characteristics

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2

Document Number: 71692

S09-0221-Rev. E, 09-Feb-09

Si4836DY

Vishay Siliconix

TYPICAL CHARACTERISTICS

25 °C, unless otherwise noted

0.006

8000

0.005

R

DS(on)

- On-Resistance (Ω)

C - Capacitance (pF)

V

GS

= 1.8 V

0.004

V

GS

= 2.5 V

0.003

V

GS

= 4.5 V

6400

C

iss

4800

C

oss

3200

0.002

0.001

1600

C

rss

0

10

20

30

40

50

60

0

2

4

6

8

10

12

0.000

I

D

- Drain Current (A)

V

DS

- Drain-to-Source Voltage (V)

On-Resistance vs. Drain Current

6

V

DS

= 6 V

I

D

= 25 A

R

DS(on)

- On-Resistance

(Normalized)

1.8

V

GS

= 4.5 V

I

D

= 25 A

Capacitance

V

GS

- Gate-to-Source Voltage (V)

5

1.6

4

1.4

3

1.2

2

1.0

1

0.8

0

14

28

42

56

70

0.6

- 50

- 25

0

25

50

75

100

125

150

Q

g

- Total Gate Charge (nC)

T

J

- Junction Temperature (°C)

Gate Charge

60

0.015

On-Resistance vs. Junction Temperature

T

J

= 150 °C

10

T

J

= 25 °C

R

DS(on)

- On-Resistance (Ω)

0.012

I

S

- Source Current (A)

0.009

0.006

I

D

= 25 A

0.003

1

0

0.2

0.4

0.6

0.8

1.0

1.2

V

SD

- Source-to-Drain Voltage (V)

0.000

0

2

4

6

8

10

V

GS

- Gate-to-Source Voltage (V)

Source-Drain Diode Forward Voltage

On-Resistance vs. Gate-to-Source Voltage

Document Number: 71692

S09-0221-Rev. E, 09-Feb-09

www.vishay.com

3

Si4836DY

Vishay Siliconix

TYPICAL CHARACTERISTICS

25 °C, unless otherwise noted

0.4

60

50

I

D

= 250 µA

40

Power (W)

0.0

0.2

V

GS(th)

Variance (V)

30

- 0.2

20

- 0.4

10

- 0.6

- 50

- 25

0

25

50

75

100

125

150

0

10

- 2

10

- 1

1

Time (s)

10

100

600

T

J

- Temperature (°C)

Threshold Voltage

2

1

Normalized Effective Transient

Thermal Impedance

Duty Cycle = 0.5

Single Pulse Power

0.2

Notes:

0.1

0.05

P

DM

t

1

t

2

1. Duty Cycle, D =

t

1

t

2

0.02

Single Pulse

0.01

10

- 4

10

- 3

10

- 2

10

- 1

1

Square Wave Pulse Duration (s)

2. Per Unit Base = R

thJA

= 67 °C/W

3. T

JM

- T

A

= P

DM

Z

thJA(t)

4. Surface Mounted

10

100

600

Normalized Thermal Transient Impedance, Junction-to-Ambient

2

1

Normalized Effective Transient

Thermal Impedance

Duty Cycle = 0.5

0.2

0.1

0.05

0.02

Single Pulse

0.01

10

- 4

10

- 3

10

- 2

10

- 1

Square Wave Pulse Duration (s)

1

10

Normalized Thermal Transient Impedance, Junction-to-Foot

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon

Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and

reliability data, see www.vishay.com/ppg?71692.

www.vishay.com

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Document Number: 71692

S09-0221-Rev. E, 09-Feb-09

Legal Disclaimer Notice

www.vishay.com

Vishay

Disclaimer



ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE

RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,

“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other

disclosure relating to any product.

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or

the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all

liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,

consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular

purpose, non-infringement and merchantability.

Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of

typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding

statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a

particular product with the properties described in the product specification is suitable for use in a particular application.

Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over

time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s

technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,

including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining

applications or for any other application in which the failure of the Vishay product could result in personal injury or death.

Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.

Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for

such applications.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document

or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.

Revision: 08-Feb-17

1

Document Number: 91000

参数名称	属性值
是否Rohs认证	不符合
包装说明	,
Reach Compliance Code	compliant
配置	Single
最大漏极电流 (Abs) (ID)	17 A
FET 技术	METAL-OXIDE SEMICONDUCTOR
JESD-609代码	e0
工作模式	ENHANCEMENT MODE
最高工作温度	150 °C
极性/信道类型	N-CHANNEL
最大功率耗散 (Abs)	3.5 W
表面贴装	YES
端子面层	Tin/Lead (Sn/Pb)
Base Number Matches	1

SI4836DY

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