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IS42RM32400G-6BLI-TR: 产品描述DRAM 128M, 2.5V, Mobile SDRAM, 4Mx32, 166Mhz, 90 ball BGA (8mmx13mm) RoHS, IT, T&R; 产品类别存储; 文件大小345KB，共33页; 制造商ISSI(芯成半导体); 官网地址http://www.issi.com/

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IS42RM32400G-6BLI-TR概述

DRAM 128M, 2.5V, Mobile SDRAM, 4Mx32, 166Mhz, 90 ball BGA (8mmx13mm) RoHS, IT, T&R

IS42RM32400G-6BLI-TR规格参数

参数名称	属性值
Product Attribute	Attribute Value
制造商 Manufacturer	ISSI(芯成半导体)
产品种类 Product Category	DRAM
类型 Type	SDRAM Mobile
Data Bus Width	32 bit
Organization	4 M x 32
封装 / 箱体 Package / Case	BGA-90
Memory Size	128 Mbit
Maximum Clock Frequency	166 MHz
Access Time	5.5 ns
电源电压-最大 Supply Voltage - Max	3 V
电源电压-最小 Supply Voltage - Min	2.3 V
Supply Current - Max	60 mA
最小工作温度 Minimum Operating Temperature	- 40 C
最大工作温度 Maximum Operating Temperature	+ 85 C
安装风格 Mounting Style	SMD/SMT
工作电源电压 Operating Supply Voltage	2.5 V
工厂包装数量 Factory Pack Quantity	2500

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IS42/45SM/RM/VM32400G

32Bits

4Banks Mobile Synchronous DRAM

Description

These IS42/45SM/RM/VM32400G are mobile 134,217,728 bits CMOS Synchronous DRAM organized as 4 banks of 1,048,576 words x 32

bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs

are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve high bandwidth. All input

and output voltage levels are compatible with LVCMOS.

Features



JEDEC standard 3.3V, 2.5V, 1.8V power supply

• Auto refresh and self refresh

• All pins are compatible with LVCMOS interface

• 4K refresh cycle / 64ms

• Programmable Burst Length and Burst Type

•

1, 2, 4, 8 or Full Page for Sequential Burst

•

4 or 8 for Interleave Burst

• Programmable CAS Latency : 2,3 clocks

• All inputs and outputs referenced to the positive edge of the

system clock

• Data mask function by DQM

• Internal 4 banks operation

• Burst Read Single Write operation

• Special Function Support

•

PASR(Partial Array Self Refresh)

•

Auto TCSR(Temperature Compensated Self Refresh)

•

Programmable Driver Strength Control

•

Full Strength or 1/2, 1/4, 1/8 of Full Strength

•

Deep Power Down Mode

• Automatic precharge, includes CONCURRENT Auto Precharge

Mode and controlled Precharge

products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services

described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information

and before placing orders for products.

Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or

malfunction of the product can reasonably be expected to cause failure of the life support system or to significantly affect its safety or

effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance to

its satisfaction, that:

a.) the risk of injury or damage has been minimized;

b.) the user assume all such risks; and

c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances

Rev. A | Apr. 2012

www.issi.com

- DRAM@issi.com

IS42RM32400G-6BLI-TR相似产品对比

	IS42RM32400G-6BLI-TR	IS42RM32400G-75BLI-TR	IS42RM32400G-6BLI	IS42SM32400G-6BLI-TR	IS42RM32400G-75BLI	IS42SM32400G-75BLI	IS42VM32400G-75BLI-TR	IS42VM32400G-75BLI	IS42SM32400G-75BLI-TR	IS42VM32400G-6BLI-TR
描述	DRAM 128M, 2.5V, Mobile SDRAM, 4Mx32, 166Mhz, 90 ball BGA (8mmx13mm) RoHS, IT, T&R	DRAM 128M (4Mx32) 133MHz Mobile SDRAM, 2.5v	DRAM 128M, 2.5V, Mobile SDRAM, 4Mx32, 166Mhz, 90 ball BGA (8mmx13mm) RoHS, IT	DRAM 128M 4Mx32 166Mhz Mobile SDRAM 3.3v	DRAM 128M (4Mx32) 133MHz 2.5v Mobile SDR	DRAM 128M (4Mx32) 133MHz 3.3V Mobile SDR	DRAM 128M (4Mx32) 133MHz Mobile SDRAM 1.8v	DRAM 128M (4Mx32) 133MHz 1.8V Mobile SDR	DRAM 128M (4Mx32) 133MHz Mobile SDRAM 3.3v	DRAM 128M (4Mx32) 166MHz Mobile SDRAM 1.8v
Product Attribute	Attribute Value	Attribute Value	Attribute Value	Attribute Value	Attribute Value	Attribute Value	Attribute Value	Attribute Value	Attribute Value	Attribute Value
制造商 Manufacturer	ISSI(芯成半导体)	ISSI(芯成半导体)	ISSI(芯成半导体)	ISSI(芯成半导体)	ISSI(芯成半导体)	ISSI(芯成半导体)	ISSI(芯成半导体)	ISSI(芯成半导体)	ISSI(芯成半导体)	ISSI(芯成半导体)
产品种类 Product Category	DRAM	DRAM	DRAM	DRAM	DRAM	DRAM	DRAM	DRAM	DRAM	DRAM
类型 Type	SDRAM Mobile	SDRAM Mobile	SDRAM Mobile	SDRAM Mobile	SDRAM Mobile	SDRAM Mobile	SDRAM Mobile	SDRAM Mobile	SDRAM Mobile	SDRAM Mobile
Data Bus Width	32 bit	32 bit	32 bit	32 bit	32 bit	32 bit	32 bit	32 bit	32 bit	32 bit
Organization	4 M x 32	4 M x 32	4 M x 32	4 M x 32	4 M x 32	4 M x 32	4 M x 32	4 M x 32	4 M x 32	4 M x 32
封装 / 箱体 Package / Case	BGA-90	BGA-90	BGA-90	BGA-90	BGA-90	BGA-90	BGA-90	BGA-90	BGA-90	BGA-90
Memory Size	128 Mbit	128 Mbit	128 Mbit	128 Mbit	128 Mbit	128 Mbit	128 Mbit	128 Mbit	128 Mbit	128 Mbit
Maximum Clock Frequency	166 MHz	133 MHz	166 MHz	166 MHz	133 MHz	133 MHz	133 MHz	133 MHz	133 MHz	166 MHz
Access Time	5.5 ns	6 ns	5.5 ns	5.5 ns	6 ns	6 ns	6 ns	6 ns	6 ns	5.5 ns
电源电压-最大 Supply Voltage - Max	3 V	3 V	3 V	3.6 V	3 V	3.6 V	1.95 V	1.95 V	3.6 V	1.95 V
电源电压-最小 Supply Voltage - Min	2.3 V	2.3 V	2.3 V	2.7 V	2.3 V	2.7 V	1.7 V	1.7 V	2.7 V	1.7 V
Supply Current - Max	60 mA	55 mA	60 mA	75 mA	55 mA	70 mA	55 mA	55 mA	70 mA	60 mA
最小工作温度 Minimum Operating Temperature	- 40 C	- 40 C	- 40 C	- 40 C	- 40 C	- 40 C	- 40 C	- 40 C	- 40 C	- 40 C
最大工作温度 Maximum Operating Temperature	+ 85 C	+ 85 C	+ 85 C	+ 85 C	+ 85 C	+ 85 C	+ 85 C	+ 85 C	+ 85 C	+ 85 C
安装风格 Mounting Style	SMD/SMT	SMD/SMT	SMD/SMT	SMD/SMT	SMD/SMT	SMD/SMT	SMD/SMT	SMD/SMT	SMD/SMT	SMD/SMT
工作电源电压 Operating Supply Voltage	2.5 V	2.5 V	2.5 V	3.3 V	2.5 V	3.3 V	1.8 V	1.8 V	3.3 V	1.8 V
工厂包装数量 Factory Pack Quantity	2500	2500	240	2500	240	240	2500	240	2500	2500
RoHS	-	Details	-	Details	Details	Details	Details	Details	Details	Details
系列 Packaging	-	Reel	-	Reel	Tray	Tray	Reel	Tray	Reel	Reel

IS42RM32400G-6BLI-TR

IS42RM32400G-6BLI-TR在线购买

IS42RM32400G-6BLI-TR概述

IS42RM32400G-6BLI-TR规格参数

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