SMD Schottky Barrier Diode
CDBUR0140R
I
o
= 100 mA
V
R
= 40 Volts
RoHS Device
Features
- Low reverse current.
-Designed for mounting on small surface.
-Extremely thin / leadless package.
-Majority carrier conduction.
0.039(1.00)
0.031(0.80)
0603/SOD-523F
0.071(1.80)
0.063(1.60)
Mechanical data
-Case: 0603/SOD-523F standard package,
molded plastic.
-Terminals: Gold plated, solderable per
MIL-STD-750,method 2026.
-Polarity: Indicated by cathode band.
-Mounting position: Any.
-Weight: 0.003 gram(approx.).
0.028(0.70) Typ.
0.018(0.45) Typ.
0.033(0.85)
0.027(0.70)
Dimensions in inches and (millimeter)
Maximum Rating
(at T
A
=25 C unless otherwise noted)
O
Parameter
Repetitive Peak reverse voltage
Reverse voltage
Average forward rectified current
Forward current,surge peak
Storage temperature
Junction temperature
Conditions
Symbol Min Typ Max Unit
V
RRM
V
R
I
O
45
40
100
1
-40
+125
+125
V
V
mA
A
O
8.3 ms single half sine-wave superimposed
on rate load (JEDEC method)
I
FSM
T
STG
T
j
C
C
O
Electrical Characteristics
(at T
A
=25 C unless otherwise noted)
O
Parameter
Forward voltage
Reverse current
Capacitance between terminals
I
F
= 10mA
V
R
= 10V
Conditions
Symbol Min Typ Max Unit
V
F
I
R
C
T
6
0.45
1
V
uA
pF
f = 1 MHz, and 10 VDC reverse voltage
REV:A
QW-A1060
Page 1
SMD Schottky Barrier Diode
RATING AND CHARACTERISTIC CURVES (CDBUR0140R)
Fig. 1 - Forward characteristics
1000
1m
100u
Fig. 2 - Reverse characteristics
Reverse current ( A )
Forward current (mA )
125 C
O
100
10u
75 C
O
10
1u
75
O
C
25
O
C
125
O
C
100n
25 C
O
-25
1
O
C
10n
-25 C
O
0.1
0
0.2
0.4
0.6
0.8
1.0
1n
0
10
20
30
40
Forward voltage (V)
Reverse voltage (V)
Fig. 3 - Capacitance between
terminals characteristics
Capacitance between terminals (
P
F)
100
Fig.4 - Current derating curve
Average forward current(%)
100
80
10
60
40
20
1
0
5
10
15
20
25
30
35
40
0
0
25
50
75
100
O
125
Reverse voltage (V)
Ambient temperature ( C)
REV:A
QW-A1060
Page 2
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