SemiWell
Semiconductor
BT139-600
Symbol
○
Bi-Directional Triode Thyristor
Features
Repetitive Peak Off-State Voltage : 600V
◆
R.M.S On-State Current ( I
T(RMS)
= 16 A )
◆
High Commutation dv/dt
◆
Isolation Voltage ( V
ISO
= 1500V AC )
◆
2.T2
▼
▲
○
3.Gate
1.T1
○
General Description
This device is suitable for AC switching application, phase
control application such as fan speed and temperature mod-
ulation control, lighting control and static switching relay.
TO-220
1
2
3
Absolute Maximum Ratings
Symbol
V
DRM
I
T(RMS)
I
TSM
I
2
t
P
GM
P
G(AV)
I
GM
V
GM
T
J
T
STG
( T
J
= 25°C unless otherwise specified )
Condition
Ratings
600
T
C
= 100°C
One Cycle, 50Hz/60Hz, Peak,
Non-Repetitive
t =10ms
16
145/155
105
5.0
Over any 20ms period
0.5
2.0
10
- 40 ~ 125
- 40 ~ 150
2.0
Parameter
Repetitive Peak Off-State Voltage
R.M.S On-State Current
Surge On-State Current
I
2
t
for fusing
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Current
Peak Gate Voltage
Operating Junction Temperature
Storage Temperature
Mass
Units
V
A
A
A
2
s
W
W
A
V
°C
°C
g
Jan, 2004. Rev. 0
copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.
1/5
BT139-600
Electrical Characteristics
Symbol
Items
Repetitive Peak Off-State
Current
Peak On-State Voltage
Ⅰ
Ⅱ
Ⅲ
Ⅰ
Ⅱ
Ⅲ
Non-Trigger Gate Voltage
Critical Rate of Rise Off-State
Voltage at Commutation
Holding Current
Thermal Impedance
Junction to case
T
J
= 125 °C, V
D
= 1/2 V
DRM
T
J
= 125 °C, [di/dt]c = -6.0 A/ms,
V
D
=2/3 V
DRM
Gate Trigger Voltage
V
D
= 6 V, R
L
=10
Ω
Gate Trigger Current
V
D
= 6 V, R
L
=10
Ω
Conditions
V
D
= V
DRM
, Single Phase, Half Wave
T
J
= 125 °C
I
T
= 20 A, Inst. Measurement
Ratings
Min.
─
─
─
─
─
─
─
─
0.2
10
─
─
Typ.
─
─
─
─
─
─
─
─
─
─
20
─
Max.
2.0
1.6
25
25
25
1.5
1.5
1.5
─
─
─
1.2
Unit
I
DRM
V
TM
I
+GT1
I
-GT1
I
-GT3
V
+GT1
V
-GT1
V
-GT3
V
GD
(dv/dt)c
I
H
R
th(j-c)
mA
V
mA
V
V
V/㎲
mA
°C/W
2/5
BT139-600
Fig 1. Gate Characteristics
Fig 2. On-State Voltage
10
1
V
GM
(10V)
On-State Current [A]
10
2
Gate Voltage [V]
P
GM
(5W)
P
G(AV)
(0.5W)
25
℃
10
0
T
J
= 125 C
10
1
o
I
GM
(2A)
T
J
= 25 C
10
0
o
V
GD
(0.2V)
10
-1
10
1
10
2
10
3
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Gate Current [mA]
On-State Voltage [V]
Fig 3. On State Current vs.
Maximum Power Dissipation
25
Fig 4. On State Current vs.
Allowable Case Temperature
130
Power Dissipation [W]
20
π
θ
360°
θ
2
π
θ
= 180
o
θ
= 150
θ
= 120
θ
= 90
θ
= 60
θ
= 30
o
o
o
o
Allowable Case Temperature [
o
C]
125
120
115
110
15
θ
: Conduction Angle
10
θ
= 30
π
θ
θ
2
π
o
θ
= 60
θ
= 90
o
o
o
o
105
100
95
0
360°
5
θ
: Conduction Angle
θ
= 120
o
θ
= 150
o
θ
= 180
12
16
20
0
0
2
4
6
8
10
12
14
16
18
20
4
8
RMS On-State Current [A]
RMS On-State Current [A]
Fig 5. Surge On-State Current Rating
( Non-Repetitive )
200
Fig 6. Gate Trigger Voltage vs.
Junction Temperature
10
Surge On-State Current [A]
150
V
GT
(t C)
o
o
60Hz
100
V
GT
(25 C)
1
50
50Hz
0
0
10
10
1
10
2
0.1
-50
0
50
100
o
150
Time (cycles)
Junction Temperature [ C]
3/5
BT139-600
Fig 7. Gate Trigger Current vs.
Junction Temperature
10
10
1
Fig 8. Transient Thermal Impedance
Transient Thermal Impedance [ C/W]
o
10
0
I
GT
(25 C)
I
GT
(t C)
1
I
I
o
+
GT1
_
GT1
o
10
-1
I
_
GT3
0.1
-50
0
50
100
o
150
10
-2
10
-3
10
-2
10
-1
10
0
10
1
Junction Temperature [ C]
Time (sec)
Fig 9. Gate Trigger Characteristics Test Circuit
10Ω
10Ω
10Ω
▼
▲
6V
●
▼
▲
A
●
▼
▲
A
●
6V
6V
A
V
●
R
G
V
●
R
G
V
●
R
G
Test Procedure
Ⅰ
Test Procedure
Ⅱ
Test Procedure
Ⅲ
4/5
BT139-600
TO-220 Package Dimension
mm
Typ.
Inch
Typ.
Dim.
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
Min.
9.7
6.3
9.0
12.8
1.2
Max.
10.1
6.7
9.47
13.3
1.4
Min.
0.382
0.248
0.354
0.504
0.047
Max.
0.398
0.264
0.373
0.524
0.055
1.7
2.5
3.0
1.25
2.4
5.0
2.2
1.25
0.45
0.6
3.6
3.4
1.4
2.7
5.15
2.6
1.55
0.6
1.0
0.118
0.049
0.094
0.197
0.087
0.049
0.018
0.024
0.067
0.098
0.134
0.055
0.106
0.203
0.102
0.061
0.024
0.039
0.142
φ
E
B
A
H
I
φ
F
C
M
G
1
D
2
3
L
1. T1
2. T2
3. Gate
N
O
J
K
5/5
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