Preliminary
SemiWell
Semiconductor
Sensitive Gate Triacs
Symbol
BT236-D
Features
Repetitive Peak Off-State Voltage : 600V
◆
R.M.S On-State Current ( I
T(RMS)
= 6 A )
◆
High Commutation dv/dt
◆
Sensitive Gate Triggering 4 Mode
◆
Non-isolated Type
◆
○
2.T2
▼
▲
○
3.Gate
1.T1
○
General Description
This device is sensitive gate triac suitable for direct coupling
to TTL, HTL, CMOS and application such as various logic
functions, AC switching applications, phase control applica-
tion such as fan speed, light controllers and home appliance
equipment.
TO-220
1
2
3
Absolute Maximum Ratings
Symbol
V
DRM
I
T(RMS)
I
TSM
I
2
t
P
GM
P
G(AV)
I
GM
V
GM
T
J
T
STG
( T
J
= 25°C unless otherwise specified )
Condition
Sine wave, 50 to 60 Hz, Gate open
T
C
=101 °C, Full Sine wave
One Cycle, 50Hz/60Hz, Peak,
Non-Repetitive
tp = 10ms
T
C
= 101 °C, Pulse width
≤
1.0us
Over any 20ms period
tp = 20us, T
J
=125°C
tp = 20us, T
J
=125°C
Parameter
Repetitive Peak Off-State Voltage
R.M.S On-State Current
Surge On-State Current
I
2
t
for Fusing
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Current
Peak Gate Voltage
Operating Junction Temperature
Storage Temperature
Ratings
600
6.0
60/66
18
3.0
0.3
2.0
10
- 40 ~ 125
- 40 ~ 150
Units
V
A
A
A
2
s
W
W
A
V
°C
°C
Mar, 2004. Rev. 0
copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.
1/5
BT236-D
Electrical Characteristics
Symbol
Items
Repetitive Peak Off-State
Current
Peak On-State Voltage
Ⅰ
Ⅱ
Gate Trigger Current
I
-
GT3
Conditions
V
D
= V
DRM
, Single Phase, Half Wave
T
J
= 125 °C
I
T
= 8 A, Inst. Measurement
Ratings
Min.
─
─
─
─
Typ.
─
─
─
─
─
8
─
─
─
1.6
─
─
─
─
─
Max.
1.0
1.6
5
5
Unit
I
DRM
V
TM
I
+GT1
I
-GT1
mA
V
V
D
= 6 V, R
L
=10
Ω
─
─
─
─
5
12
1.4
1.4
mA
Ⅲ
Ⅳ
Ⅰ
Ⅱ
Gate Trigger Voltage
V
D
= 6 V, R
L
=10
Ω
Ⅲ
Ⅳ
Non-Trigger Gate Voltage
Critical Rate of Rise Off-State
Voltage at Commutation
Holding Current
Thermal Impedance
Thermal Impedance
Junction to case
Junction to Ambient
T
J
= 125 °C, V
D
= 1/2 V
DRM
T
J
= 125 °C, [di/dt]c = -0.5 A/ms,
V
D
=2/3 V
DRM
I
+GT3
V
+GT1
V
-GT1
V
GT3
V
+GT3
V
GD
(dv/dt)c
I
H
R
th(j-c)
R
th(j-a)
-
V
─
─
0.2
5
─
─
─
1.4
2.0
─
─
10
2.8
60
V
V/㎲
mA
°C/W
°C/W
※
Notes :
1. Pulse Width
≤
300us , Duty cycle
≤
2%
2/5
BT236-D
Fig 1. Gate Characteristics
10
10
1
Fig 2. On-State Voltage
2
V
GM
(10V)
P
GM
(3W)
P
G(AV)
(0.3W)
25
℃
I+
GT3
25
℃
I+
GT1
I
-
GT1
I
-
GT3
V
GD
(0.2V)
10
-1
On-State Current [A]
Gate Voltage [V]
10
1
T
J
= 125 C
o
I
GM
(2A)
10
0
T
J
= 25 C
10
0
o
10
0
10
1
10
2
10
3
10
4
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Gate Current [mA]
On-State Voltage [V]
Fig 3. On State Current vs.
Maximum Power Dissipation
Allowable Case Temperature [
o
C]
10
9
Fig 4. On State Current vs.
Allowable Case Temperature
130
Power Dissipation [W]
8
7
π
θ
360°
θ
2
π
θ
= 180
o
θ
= 150
θ
= 120
θ
= 90
o
o
o
o
o
120
6
5
4
3
2
1
0
0
θ
: Conduction Angle
θ
= 60
θ
= 30
π
110
θ
2
π
θ
= 30
θ
= 60
θ
= 90
o
o
o
o
θ
360°
θ
100
: Conduction Angle
θ
= 120
o
θ
= 150
o
θ
= 180
3
4
5
6
7
1
2
3
4
5
6
7
8
0
1
2
RMS On-State Current [A]
RMS On-State Current [A]
Fig 5. Surge On-State Current Rating
( Non-Repetitive )
80
70
Fig 6. Gate Trigger Voltage vs.
Junction Temperature
10
3
Surge On-State Current [A]
60Hz
50
40
30
20
10
0
0
10
o
X 100 (%)
60
V
V
GT1
10
2
+
GT1
-
-
V
GT3
50Hz
V
GT
(25 C)
V
GT
(t C)
o
V
1
+
GT3
10
1
10
2
10
-50
0
50
100
o
150
Time (cycles)
Junction Temperature [ C]
3/5
BT236-D
Fig 7. Gate Trigger Current vs.
Junction Temperature
10
3
Fig 8. Transient Thermal Impedance
10
I
10
2
+
GT1
-
GT1
-
GT3
I
I
Transient Thermal Impedance [ C/W]
I
GT
(25 C)
I
GT
(t C)
o
o
X 100 (%)
o
1
I
10
1
+
GT3
-50
0
50
100
o
150
10
-2
10
-1
10
0
10
1
10
2
Junction Temperature [ C]
Time (sec)
Fig 9. Gate Trigger Characteristics Test Circuit
10Ω
10Ω
10Ω
10Ω
▼
▲
6V
●
▼
▲
A
●
▼
▲
A
●
6V
6V
A
▼
▲
R
G
6V
●
A
V
●
R
G
V
●
R
G
V
●
V
●
R
G
Test Procedure
Ⅰ
Test Procedure
Ⅱ
Test Procedure
Ⅲ
Test Procedure
Ⅳ
4/5
BT236-D
TO-220 Package Dimension
Dim.
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
Min.
9.7
6.3
9.0
12.8
1.2
mm
Typ.
Max.
10.1
6.7
9.47
13.3
1.4
Min.
0.382
0.248
0.354
0.504
0.047
Inch
Typ.
Max.
0.398
0.264
0.373
0.524
0.055
1.7
2.5
3.0
1.25
2.4
5.0
2.2
1.25
0.45
0.6
3.6
3.4
1.4
2.7
5.15
2.6
1.55
0.6
1.0
0.118
0.049
0.094
0.197
0.087
0.049
0.018
0.024
0.067
0.098
0.134
0.055
0.106
0.203
0.102
0.061
0.024
0.039
0.142
φ
E
B
A
H
I
φ
F
C
M
G
1
D
2
3
L
1. T1
2. T2
3. Gate
N
O
J
K
5/5
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