SemiWell
Semiconductor
BT137-600
Symbol
○
Bi-Directional Triode Thyristor
Features
Repetitive Peak Off-State Voltage : 600V
◆
R.M.S On-State Current ( I
T(RMS)
= 8 A )
◆
High Commutation dv/dt
◆
Non-isolated Type
◆
2.T2
▼
▲
○
3.Gate
1.T1
○
TO-220
General Description
This device is suitable for AC switching application, phase
control application such as fan speed and temperature mod-
ulation control, lighting control and static switching relay.
1
2
3
Absolute Maximum Ratings
Symbol
V
DRM
I
T(RMS)
I
TSM
I
2
t
P
GM
P
G(AV)
I
GM
V
GM
T
J
T
STG
( T
J
= 25°C unless otherwise specified )
Condition
Ratings
600
T
C
= 103 °C
One Cycle, 50Hz/60Hz, Peak,
Non-Repetitive
t =10ms
8.0
70/77
24
5.0
Over any 20ms period
0.5
2.0
10
- 40 ~ 125
- 40 ~ 150
2.0
Parameter
Repetitive Peak Off-State Voltage
R.M.S On-State Current
Surge On-State Current
I
2
t
for fusing
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Current
Peak Gate Voltage
Operating Junction Temperature
Storage Temperature
Mass
Units
V
A
A
A
2
s
W
W
A
V
°C
°C
g
Jan, 2004. Rev. 0
copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.
1/5
BT137-600
Electrical Characteristics
Symbol
Items
Repetitive Peak Off-State
Current
Peak On-State Voltage
Ⅰ
Ⅱ
Ⅲ
Ⅰ
Ⅱ
Ⅲ
Non-Trigger Gate Voltage
Critical Rate of Rise Off-State
Voltage at Commutation
Holding Current
Thermal Impedance
Junction to case
T
J
= 125 °C, V
D
= 1/2 V
DRM
T
J
= 125 °C, [di/dt]c = -3.0 A/ms,
V
D
=2/3 V
DRM
Gate Trigger Voltage
V
D
= 6 V, R
L
=10
Ω
Gate Trigger Current
V
D
= 6 V, R
L
=10
Ω
Conditions
V
D
= V
DRM
, Single Phase, Half Wave
T
J
= 125 °C
I
T
= 10 A, Inst. Measurement
Ratings
Min.
─
─
─
─
─
─
─
─
0.2
5.0
─
─
Typ.
─
─
─
─
─
─
─
─
─
─
10
─
Max.
1.0
1.6
25
25
25
1.5
1.5
1.5
─
─
─
2.0
Unit
I
DRM
V
TM
I
+GT1
I
-GT1
I
-GT3
V
+GT1
V
-GT1
V
-GT3
V
GD
(dv/dt)c
I
H
R
th(j-c)
mA
V
mA
V
V
V/㎲
mA
°C/W
2/5
BT137-600
Fig 1. Gate Characteristics
10
2
Fig 2. On-State Voltage
10
1
V
GM
(10V)
On-State Current [A]
P
GM
(5W)
Gate Voltage [V]
P
G(AV)
(0.5W)
25
℃
I
GM
(2A)
10
0
10
1
T
J
= 125 C
o
T
J
= 25 C
10
0
o
V
GD
(0.2V)
10
-1
10
1
10
2
10
3
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Gate Current [mA]
On-State Voltage [V]
Fig 3. On State Current vs.
Maximum Power Dissipation
12
11
10
Fig 4. On State Current vs.
Allowable Case Temperature
o
130
π
θ
360°
θ
2
π
9
8
7
6
5
4
3
2
1
0
0
1
θ
= 90
θ
= 60
θ
= 30
o
Allowable Case Temperature [
o
C]
Power Dissipation [W]
θ
= 180
o
θ
= 150
o
θ
= 120
120
θ
: Conduction Angle
o
o
π
110
θ
2
π
θ
= 30
θ
θ
θ
θ
5
6
7
8
o
o
θ
360°
θ
= 60
θ
: Conduction Angle
100
0
1
2
3
4
= 90
o
= 120
o
= 150
o
= 180
9
10
o
2
3
4
5
6
7
8
9
10
RMS On-State Current [A]
RMS On-State Current [A]
Fig 5. Surge On-State Current Rating
( Non-Repetitive )
90
80
Fig 6. Gate Trigger Voltage vs.
Junction Temperature
10
Surge On-State Current [A]
70
60
50
40
30
20
10
0
0
10
60Hz
V
GT
(25 C)
V
GT
(t C)
o
o
1
50Hz
10
1
10
2
0.1
-50
0
50
100
o
150
Time (cycles)
Junction Temperature [ C]
3/5
BT137-600
Fig 7. Gate Trigger Current vs.
Junction Temperature
10
10
1
Fig 8. Transient Thermal Impedance
1
I
I
+
GT1
_
GT1
Transient Thermal Impedance [ C/W]
I
GT
(25 C)
I
GT
(t C)
o
o
o
10
0
I
_
GT3
0.1
-50
10
-1
0
50
100
o
150
10
-2
10
-1
10
0
10
1
10
2
Junction Temperature [ C]
Time (sec)
Fig 9. Gate Trigger Characteristics Test Circuit
10Ω
10Ω
10Ω
▼
▲
6V
●
▼
▲
A
●
▼
▲
A
●
6V
6V
A
V
●
R
G
V
●
R
G
V
●
R
G
Test Procedure
Ⅰ
Test Procedure
Ⅱ
Test Procedure
Ⅲ
4/5
BT137-600
TO-220 Package Dimension
mm
Typ.
Inch
Typ.
Dim.
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
Min.
9.7
6.3
9.0
12.8
1.2
Max.
10.1
6.7
9.47
13.3
1.4
Min.
0.382
0.248
0.354
0.504
0.047
Max.
0.398
0.264
0.373
0.524
0.055
1.7
2.5
3.0
1.25
2.4
5.0
2.2
1.25
0.45
0.6
3.6
3.4
1.4
2.7
5.15
2.6
1.55
0.6
1.0
0.118
0.049
0.094
0.197
0.087
0.049
0.018
0.024
0.067
0.098
0.134
0.055
0.106
0.203
0.102
0.061
0.024
0.039
0.142
φ
E
B
A
H
I
φ
F
C
M
G
1
D
2
3
L
1. T1
2. T2
3. Gate
N
O
J
K
5/5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
