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MBR350RL

产品描述Schottky Diodes & Rectifiers 3A 50V
产品类别分立半导体    二极管   
文件大小56KB,共4页
制造商ON Semiconductor(安森美)
官网地址http://www.onsemi.cn
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MBR350RL概述

Schottky Diodes & Rectifiers 3A 50V

MBR350RL规格参数

参数名称属性值
Brand NameON Semiconductor
是否无铅不含铅
厂商名称ON Semiconductor(安森美)
零件包装代码DO-201AD
包装说明O-PALF-W2
针数2
制造商包装代码267-05
Reach Compliance Codenot_compliant
ECCN代码EAR99
Factory Lead Time1 week
其他特性FREE WHEELING DIODE, LOW POWER LOSS
应用EFFICIENCY
外壳连接ISOLATED
配置SINGLE
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
最大正向电压 (VF)1 V
JEDEC-95代码DO-201AD
JESD-30 代码O-PALF-W2
JESD-609代码e3
最大非重复峰值正向电流80 A
元件数量1
相数1
端子数量2
最高工作温度150 °C
最大输出电流3 A
封装主体材料PLASTIC/EPOXY
封装形状ROUND
封装形式LONG FORM
峰值回流温度(摄氏度)260
认证状态Not Qualified
最大重复峰值反向电压50 V
表面贴装NO
技术SCHOTTKY
端子面层Tin (Sn)
端子形式WIRE
端子位置AXIAL
处于峰值回流温度下的最长时间40

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MBR350, MBR360
MBR360 is a Preferred Device
Axial Lead Rectifiers
These devices employ the Schottky Barrier principle in a large area
metal−to−silicon power diode. State−of−the−art geometry features
epitaxial construction with oxide passivation and metal overlap
contact. Ideally suited for use as rectifiers in low−voltage,
high−frequency inverters, free wheeling diodes, and polarity
protection diodes.
Features
http://onsemi.com
Extremely Low v
F
Low Power Loss/High Efficiency
Highly Stable Oxide Passivated Junction
Low Stored Charge, Majority Carrier Conduction
Pb−Free Packages are Available*
SCHOTTKY BARRIER
RECTIFIERS
3.0 AMPERES
50, 60 VOLTS
Mechanical Characteristics:
Case: Epoxy, Molded
Weight: 1.1 Gram (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Polarity: Cathode indicated by Polarity Band
MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Symbol
V
RRM
V
RWM
V
R
I
O
I
FSM
Max
Unit
V
50
60
3.0
80
A
A
A
MBR
3x0G
G
AXIAL LEAD
CASE 267−05
(DO−201AD)
STYLE 1
MARKING DIAGRAM
MBR350
MBR360
Average Rectified Forward Current T
A
= 65°C
(R
qJA
= 28°C/W, P.C. Board Mounting)
Non−Repetitive Peak Surge Current (Note 1)
(Surge Applied at Rated Load Conditions
Halfwave, Single Phase, 60 Hz, T
L
= 75°C)
Operating and Storage Junction Temperature
Range (Reverse Voltage Applied)
T
J
, T
stg
−65 to
+150
°C
A
x
G
(Note:
= Assembly Location
= 5 or 6
= Pb−Free Package
Microdot may be in either location)
THERMAL CHARACTERISTICS
Thermal Resistance, Junction−to−Ambient
(see Note 4 − Mounting Data, Mounting Method 3)
R
qJA
28
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Lead Temperature reference is cathode lead 1/32 in from case.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
Preferred
devices are recommended choices for future use
and best overall value.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2006
1
June, 2006 − Rev. 6
Publication Order Number:
MBR350/D

MBR350RL相似产品对比

MBR350RL MBR360RL MBR360
描述 Schottky Diodes & Rectifiers 3A 50V Schottky Diodes & Rectifiers 3A 60V Schottky Diodes & Rectifiers 3A 60V
Brand Name ON Semiconductor ON Semiconductor ON Semiconductor
是否无铅 不含铅 不含铅 不含铅
厂商名称 ON Semiconductor(安森美) ON Semiconductor(安森美) ON Semiconductor(安森美)
零件包装代码 DO-201AD DO-201AD DO-201AD
包装说明 O-PALF-W2 O-PALF-W2 O-PALF-W2
针数 2 2 2
制造商包装代码 267-05 267-05 267-05
Reach Compliance Code not_compliant not_compliant not_compliant
ECCN代码 EAR99 EAR99 EAR99
其他特性 FREE WHEELING DIODE, LOW POWER LOSS FREE WHEELING DIODE, LOW POWER LOSS FREE WHEELING DIODE, LOW POWER LOSS
应用 EFFICIENCY EFFICIENCY EFFICIENCY
外壳连接 ISOLATED ISOLATED ISOLATED
配置 SINGLE SINGLE SINGLE
二极管元件材料 SILICON SILICON SILICON
二极管类型 RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
最大正向电压 (VF) 1 V 1 V 1 V
JEDEC-95代码 DO-201AD DO-201AD DO-201AD
JESD-30 代码 O-PALF-W2 O-PALF-W2 O-PALF-W2
JESD-609代码 e3 e3 e3
最大非重复峰值正向电流 80 A 80 A 80 A
元件数量 1 1 1
相数 1 1 1
端子数量 2 2 2
最高工作温度 150 °C 150 °C 150 °C
最大输出电流 3 A 3 A 3 A
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 ROUND ROUND ROUND
封装形式 LONG FORM LONG FORM LONG FORM
峰值回流温度(摄氏度) 260 260 260
认证状态 Not Qualified Not Qualified Not Qualified
最大重复峰值反向电压 50 V 60 V 60 V
表面贴装 NO NO NO
技术 SCHOTTKY SCHOTTKY SCHOTTKY
端子面层 Tin (Sn) Tin (Sn) Tin (Sn)
端子形式 WIRE WIRE WIRE
端子位置 AXIAL AXIAL AXIAL
处于峰值回流温度下的最长时间 40 40 40
Factory Lead Time 1 week - 1 week
Samacsys Description - DIODE SCHOTTKY 60V 3A DO201AD Schottky Diodes & Rectifiers 3A 60V

 
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