RN2114MFV∼RN2118MFV
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)
RN2114MFV, RN2115MFV, RN2116MFV
RN2117MFV, RN2118MFV
Switching Applications
Inverter Circuit Applications
Interface Circuit Applications
Driver Circuit Applications
1.2±0.05
0.8±0.05
0.4
Unit: mm
0.22±0.05
1.2±0.05
0.8±0.05
0.32±0.05
Ultra-small package, suited to very high density mounting
Incorporating a bias resistor into the transistor reduces the number of parts,
so enabling the manufacture of ever more compact equipment and
lowering assembly cost.
A wide range of resistor values is available for use in various circuits.
Complementary to RN1114MFV to RN1118MFV
0.4
1
2
3
Equivalent Circuit and Bias Resistor Values
VESM
Type No.
RN2114MFV
RN2115MFV
RN2116MFV
RN2117MFV
RN2118MFV
R1 (kΩ)
1
2.2
4.7
10
47
R2 (kΩ)
10
10
10
4.7
10
1.BASE
2.EMITTER
3.COLLECTOR
JEDEC
―
JEITA
―
TOSHIBA
2-1L1A
Weight: 1.5 mg (typ.)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
RN2114MFV
to
RN2118MFV
RN2114MFV
Emitter-base voltage
RN2115MFV
RN2116MFV
RN2117MFV
RN2118MFV
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN2114MFV
to
RN2118MFV
I
C
P
C
(Note1)
T
j
T
stg
V
EBO
Symbol
V
CBO
V
CEO
Rating
−50
−50
−5
−6
−7
−15
−25
−100
150
150
−55
to 150
mA
mW
°C
°C
V
Unit
V
V
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note1: Mounted on FR4 board
(25.4
mm
×
25.4 mm
×
1.6mmt
)
Start of commercial production
Note:
0.5±0.05
2005-09
1
2014-03-01
0.13±0.05
RN2114MFV∼RN2118MFV
RN2114MFV
IC - VI(ON)
-100
COLLECTOR CURRENT IC (mA)
COMMON EMITTER
VCE = -0.2V
-10
Ta = 100°C
-25
25
-1
COMMON EMITTER
VCE = -0.2V
RN2115MFV
IC - VI(ON)
-100
COLLECTOR CURRENT IC (mA)
-10
Ta = 100°C
-25
25
-1
-0.1
-0.1
-1
INPUT VOLTAGE
VI(ON) ( V)
-10
-0.1
-0.1
-1
INPUT VOLTAGE
VI(ON) ( V)
-10
RN2116MFV
-100
COLLECTOR CURRENT IC (mA)
IC - VI(ON)
-100
COLLECTOR CURRENT IC (mA)
RN2117MFV
IC - VI(ON)
COMMON EMITTER
VCE = -0.2V
-10
Ta = 100°C
COMMON EMITTER
VCE = -0.2V
-10
-25
Ta = 100°C
-1
25
25
-1
-25
-0.1
-0.1
-1
-10
-100
-0.1
-0.1
-1
-10
-100
INPUT VOLTAGE
VI(ON) ( V)
INPUT VOLTAGE
VI(ON) ( V)
-100
COLLECTOR CURRENT IC (mA)
RN2118MFV
IC - VI(ON)
COMMON EMITTER
VCE = -0.2V
-10
Ta = 100°C
-25
25
-1
-0.1
-1
-10
INPUT VOLTAGE
VI(ON) ( V)
-100
3
2014-03-01
RN2114MFV∼RN2118MFV
IC - VI(OFF)
-10000
COLLECTOR CURRENT IC (μA)
COMMON EMITTER
VCE = -5V
COMMON EMITTER
VCE = -5V
IC - VI(OFF)
RN2114MFV
-10000
COLLECTOR CURRENT IC (μA)
RN2115MFV
-1000
Ta = 100°C
-25
-1000
Ta = 100°C
25
-25
25
-100
-100
-10
-0
0
-0.2
-0.4
-0.6
-0.8
-1
-1.2
-1.4
INPUT VOLTAGE
VI(OFF) ( V)
-10
-0
0
-0.2
-0.4
-0.6
-0.8
-1
-1.2
-1.4
INPUT VOLTAGE
VI(OFF) ( V)
RN2116MFV
-10000
COLLECTOR CURRENT IC (μA)
IC - VI(OFF)
-10000
COLLECTOR CURRENT IC (μA)
RN2117MFV
IC - VI(OFF)
COMMON EMITTER
VCE = -5V
COMMON EMITTER
VCE = -5V
-1000
Ta = 100°C
25
-25
-100
-1000
Ta = 100°C
25
-25
-100
-10
-0.2
-0.4
-0.6
-0.8
-1
-1.2
-1.4
-1.6
-10
-0.8
-1.2
-1.6
-2
-2.4
-2.8
-3.2
INPUT VOLTAGE
VI(OFF) ( V)
IC - VI(OFF)
INPUT VOLTAGE
VI(OFF) ( V)
RN2118MFV
-10000
COLLECTOR CURRENT IC (μA)
COMMON EMITTER
VCE = -5V
-1000
Ta = 100°C
25
-25
-100
-10
-1
-2
-3
-4
-5
-6
INPUT VOLTAGE
VI(OFF) ( V)
4
2014-03-01
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