PD - 96978E
IRF6611
DirectFET Power MOSFET
l
l
l
l
l
l
l
l
l
RoHS compliant containing no lead or bromide
V
DSS
V
GS
R
DS(on)
R
DS(on)
Low Profile (<0.7 mm)
30V max ±20V max 2.0mΩ@ 10V 2.6mΩ@ 4.5V
Dual Sided Cooling Compatible
Q
g tot
Q
gd
Q
gs2
Q
rr
Q
oss
V
gs(th)
Ultra Low Package Inductance
Optimized for High Frequency Switching above 1MHz
37nC
12nC
3.3nC
16nC
23nC
1.7V
Ideal for CPU Core DC-DC Converters
Optimized for SyncFET Socket of Sync. Buck Converter
Low Conduction Losses
Compatible with Existing Surface Mount Techniques
DirectFET ISOMETRIC
Typical values (unless otherwise specified)
MX
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ
SX
ST
MQ
MX
MT
Description
The IRF6611 combines the latest HEXFET® power MOSFET silicon technology with advanced DirectFET
TM
packaging to achieve the lowest
on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing
layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques,
when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided
cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%.
The IRF6611 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching
losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors
operating at higher frequencies. The IRF6611 has been optimized for parameters that are critical in synchronous buck operating from 12 volt
bus converters including R
DS(on)
, gate charge and Cdv/dt-induced turn on immunity. The IRF6611 offers particularly low R
DS(on)
and high Cdv/
dt immunity for synchronous FET applications.
Absolute Maximum Ratings
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
D
@ T
C
= 25°C
I
DM
E
AS
I
AR
20
Typical RDS(on) (m
Ω)
Parameter
Max.
Units
V
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Single Pulse Avalanche Energy
Avalanche Current
e
h
h
k
Ãe
f
VGS, Gate-to-Source Voltage (V)
30
±20
32
26
150
220
310
22
6.0
5.0
4.0
3.0
2.0
1.0
0.0
0
10
20
30
40
ID= 22A
VDS= 24V
VDS= 15V
A
mJ
A
ID = 27A
15
10
5
0
0
1
T J = 25°C
2
3
4
5
6
7
8
9
10
T J = 125°C
50
VGS, Gate -to -Source Voltage (V)
Fig 1.
Typical On-Resistance vs. Gate Voltage
Notes:
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET MOSFETs.
Repetitive rating; pulse width limited by max. junction temperature.
QG Total Gate Charge (nC)
Fig 2.
Typical On-Resistance vs. Gate Voltage
Starting T
J
= 25°C, L = 0.91mH, R
G
= 25Ω, I
AS
= 22A.
Surface mounted on 1 in. square Cu board, steady state.
T
C
measured with thermocouple mounted to top (Drain) of part.
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1
11/17/05
IRF6611
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
∆ΒV
DSS
/∆T
J
R
DS(on)
V
GS(th)
∆V
GS(th)
/∆T
J
I
DSS
I
GSS
gfs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
30
–––
–––
–––
1.35
–––
–––
–––
–––
–––
100
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
–––
23
2.0
2.6
–––
-6.7
–––
–––
–––
–––
–––
37
9.8
3.3
12.5
11.4
15.8
23
–––
Conditions
V
GS
= 0V, I
D
= 250µA
–––
–––
2.6
3.4
2.25
–––
1.0
150
100
-100
–––
56
–––
–––
–––
–––
–––
2.3
–––
–––
–––
–––
–––
–––
–––
V
mV/°C Reference to 25°C, I
D
= 1mA
mΩ V
GS
= 10V, I
D
= 27A
g
V
GS
= 4.5V, I
D
= 22A
g
V
mV/°C
µA
nA
S
V
DS
= 24V, V
GS
= 0V
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
V
DS
= 15V, I
D
= 22A
V
DS
= 15V
nC
V
GS
= 4.5V
I
D
= 22A
See Fig. 15
nC
Ω
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 16V, V
GS
= 0V
V
DD
= 16V, V
GS
= 4.5V
g
I
D
= 22A
–––
–––
–––
–––
–––
–––
–––
18
57
24
6.5
4860
1030
480
ns
Clamped Inductive Load
V
GS
= 0V
pF
V
DS
= 15V
ƒ = 1.0MHz
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
e
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
–––
–––
–––
24
16
220
1.0
36
24
V
ns
nC
Min.
–––
Typ. Max. Units
–––
110
A
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 22A, V
GS
= 0V
g
T
J
= 25°C, I
F
= 22A
di/dt = 100A/µs
g
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width
≤
400µs; duty cycle
≤
2%.
2
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IRF6611
Absolute Maximum Ratings
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
P
D
@T
C
= 25°C
T
P
T
J
T
STG
Power Dissipation
Power Dissipation
Power Dissipation
Peak Soldering Temperature
Operating Junction and
Storage Temperature Range
h
h
k
Parameter
Max.
3.9
2.5
89
270
-40 to + 150
Units
W
°C
Thermal Resistance
R
θJA
R
θJA
R
θJA
R
θJC
R
θJ-PCB
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case
Junction-to-PCB Mounted
Linear Derating Factor
100
D = 0.50
0.20
0.10
0.05
0.02
0.01
hl
il
jl
kl
Parameter
Typ.
–––
12.5
20
–––
1.0
0.031
Max.
32
–––
–––
1.4
–––
Units
°C/W
gÃ
W/°C
Thermal Response ( Z thJA )
10
1
τ
J
R
1
R
1
τ
J
τ
1
τ
2
R
2
R
2
R
3
R
3
τ
A
τ
τ
3
0.1
Ri (°C/W)
τi
(sec)
1.8310 0.000686
16.033
14.139
0.786140
28
τ
1
τ
2
τ
3
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Ci=
τi/Ri
Ci
τi/Ri
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
0.01
0.1
1
10
100
1000
0.001
1E-006
1E-005
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
Fig 3.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Notes:
Surface mounted on 1 in. square Cu board, steady state.
Used double sided cooling , mounting pad.
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
T
C
measured with thermocouple incontact with top (Drain) of part.
R
θ
is measured at
T
J
of approximately 90°C.
Surface mounted on 1 in. square Cu
board (still air).
Mounted to a PCB with a
thin gap filler and heat sink.
(still air)
Mounted on minimum
footprint full size board with
metalized back and with small
clip heatsink (still air)
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IRF6611
1000
TOP
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
1000
TOP
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
2.5V
10
10
2.5V
1
0.1
1
≤
60µs PULSE WIDTH
Tj = 25°C
10
1
≤
60µs PULSE WIDTH
Tj = 150°C
0.1
1
10
100
1000
100
1000
VDS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Fig 4.
Typical Output Characteristics
1000
VDS = 15V
≤60µs
PULSE WIDTH
100
T J = 25°C
10
T J = -40°C
Fig 5.
Typical Output Characteristics
1.5
ID = 27A
Typical RDS(on) (Normalized)
ID, Drain-to-Source Current
(Α)
T J = 150°C
1.0
1
V GS = 10V
V GS = 4.5V
0.5
0.1
1
2
3
4
-60 -40 -20 0
20 40 60 80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
T J , Junction Temperature (°C)
Fig 6.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
Fig 7.
Normalized On-Resistance vs. Temperature
10
Typical RDS(on) Normalized ( mΩ)
8
C, Capacitance(pF)
10000
Ciss
6
Vgs = 3.0V
Vgs = 3.5V
Vgs = 4.0V
Vgs = 4.5V
Vgs = 5.0V
Vgs = 10V
1000
Coss
Crss
4
2
T J = 25°C
0
0
20 40 60 80 100 120 140 160 180 200
ID, Drain Current (A)
100
1
10
VDS, Drain-to-Source Voltage (V)
100
Fig 8.
Typical Capacitance vs.Drain-to-Source Voltage
Fig 9.
Normalized Typical On-Resistance vs.
Drain Current and Gate Voltage
4
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IRF6611
1000
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
100
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
10
10
1msec
1
T J = 150°C
T J = 25°C
T J = 40°C
1
Ta = 25°C
Tj = 150°C
Single Pulse
0.1
0
0
10msec
VGS = 0V
2.5
3.0
3.5
0
0.0
0.5
1.0
1.5
2.0
VSD, Source-to-Drain Voltage (V)
1
10
100
Fig 10.
Typical Source-Drain Diode Forward Voltage
160
Limited by package
Fig11.
Maximum Safe Operating Area
2.0
VDS, Drain-to-Source Voltage (V)
VGS(th) Gate threshold Voltage (V)
140
120
100
80
60
40
20
0
25
50
75
100
125
150
T C , Case Temperature (°C)
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-75
-50
-25
0
25
50
75
100
125
150
ID, Drain Current (A)
ID = 50µA
T J , Temperature ( °C )
Fig 12.
Maximum Drain Current vs. Case Temperature
1400
EAS , Single Pulse Avalanche Energy (mJ)
Fig 13.
Threshold Voltage vs. Temperature
1200
1000
800
600
400
200
0
25
50
75
ID
TOP
11A
13A
BOTTOM 22A
100
125
150
Starting T J , Junction Temperature (°C)
Fig 14.
Maximum Avalanche Energy vs. Drain Current
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