d. See Solder Profile (www.vishay.com/doc?73461). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 68 °C/W.
Document Number: 73560
S-83039-Rev. B, 29-Dec-08
www.vishay.com
1
Symbol
R
thJA
R
thJC
Typical
20
1.7
Maximum
25
2.2
Unit
Si7374DP
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Current
Pulse Forward Diode Current
Forward Voltage Drop (Schottky Diode)
I
S
I
SM
V
F
I
F
= 1 A
I
F
= 1 A, T
J
= 150 °C
V
r
= 30 V
I
rm
C
T
t
rr
Q
rr
t
a
t
b
I
F
= 10 A, dI/dt = 100 A/µs, T
J
= 25 °C
V
r
= 30 V, T
J
= 100 °C
V
r
= 30 V, T
J
= 125 °C
Junction Capacitance (Schottky Diode)
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
V
r
= 10 V
0.35
0.27
0.07
3.5
10
58
45
39
20
25
70
60
T
C
= 25 °C
24
100
0.39
0.31
0.5
10
100
pF
ns
nC
ns
mA
A
V
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 15 V, R
L
= 1.5
Ω
I
D
≅
10 A, V
GEN
= 10 V, R
g
= 1
Ω
V
DD
= 15 V, R
L
= 1.5
Ω
I
D
≅
10 A, V
GEN
= 4.5 V, R
g
= 1
Ω
f = 1 MHz
V
DS
= 15 V, V
GS
= 10 V, I
D
= 20 A
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 20 A
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
5500
870
360
81
38
18
11
0.95
40
160
30
10
15
15
42
10
1.4
60
240
45
15
25
25
65
15
ns
Ω
122
57
nC
pF
V
DS
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
GS
= 0 V, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 30 V, V
GS
= 0 V
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
≥
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 23.8 A
V
GS
= 4.5 V, I
D
= 21.8 A
V
DS
= 15 V, I
D
= 23.8 A
50
0.0046
0.0055
95
0.0055
0.0066
30
1.5
2.8
± 100
500
10
V
V
nA
µA
mA
A
Ω
S
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Maximal Reverse Leakage Current
(Schottky Diode)
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 73560
S-83039-Rev. B, 29-Dec-08
Si7374DP
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
100
V
GS
= 10 V thru 3 V
V
GS
= 4 V
80
I
D
- Drain Current (A)
I
D
- Drain Current (A)
4
T
C
= 125 °C
3
25 °C
2
5
60
40
20
V
GS
= 3 V
0
0.0
0.4
0.8
1.2
1.6
2.0
1
0
1.5
- 55 °C
2.0
2.5
3.0
3.5
4.0
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
0.0070
R
DS(on)
- On-Resistance (mΩ)
8000
Transfer Characteristics
0.0065
C - Capacitance (pF)
6000
C
iss
0.0060
V
GS
= 4.5 V
0.0055
4000
0.0050
V
GS
= 10 V
2000
0.0045
0
20
40
60
80
100
0
C
rss
4
8
12
16
20
C
oss
0.0040
0
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
10
I
D
= 20 A
8
R
DS(on)
- On-Resistance
(Normalized)
V
DS
= 15 V
1.4
1.6
I
D
= 23.8 A
Capacitance
V
G S
- Gate-to-Source Voltage (V)
V
GS
= 10 V
6
1.2
4
V
DS
= 24 V
1.0
2
0.8
0
0
20
40
60
80
100
0.6
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
Document Number: 73560
S-83039-Rev. B, 29-Dec-08
On-Resistance vs. Junction Temperature
www.vishay.com
3
Si7374DP
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
100
R
DS(on)
- Drain-to.Source On-Resistance (Ω)
0.022
I
D
= 23.8 A
0.018
I
S
- Source Current (A)
0.014
T
J
= 150 °C
10
T
J
= 25 °C
0.010
125 °C
0.006
25 °C
0.002
2
4
6
8
10
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
50
On-Resistance vs. Gate-to-Source Voltage
100.000
I
R
- Reverse Current (mA)
10.000
V
DS
= 30 V
1.000
Power (W)
40
30
0.100
V
DS
= 24 V
20
0.010
10
0.001
0
25
50
75
100
125
150
T
J
- Temperature (°C)
0
0.01
0.1
1
10
Time (s)
100
1000
Threshold Voltage
100
Limited by R
DS(on)
*
Single Pulse Power
10
I
D
- Drain Current (A)
1 ms
10 ms
1
100 ms
1s
0.1
T
A
= 25 °C
Single Pulse
0.01
0.1
1
10
BVDSS Limited
10 s
DC
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 73560
S-83039-Rev. B, 29-Dec-08
Si7374DP
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
100
60
80
I
D
- Drain Current (A)
50
40
Power
Limited by Package
20
60
30
40
20
10
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Current Derating*
Power Derating
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
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