BUL704
High voltage fast-switching NPN Power Transistor
General features
■
■
■
■
■
■
NPN Transistor
High voltage capability
Low spread of dynamic parameters
Minimum lot-to-lot spread for reliable operation
Very high switching speed
In compliance with the 2002/93/EC European
Directive
Description
The device is manufactured using high voltage
Multi-Epitaxial Planar technology for high
switching speeds and medium voltage capability.
It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
Applications
■
■
Electronic ballast for fluorescent lighting
Dedicated for PFC solution in HF ballast half-
bridge voltage fed
bs
O
et
l
o
ro
P
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uc
d
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t(
so
schematic diagram
Internal
b
O
-
t
le
P
e
TO-220
ro
uc
d
1
2
3
s)
t(
Order codes
Part Number
BUL704
Marking
BUL704
Package
TO-220
Packing
Tube
May 2006
Rev 1
1/11
www.st.com
11
BUL704
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
2.2
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
bs
O
et
l
o
ro
P
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d
s)
t(
O
-
so
b
te
le
ro
P
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d
s)
t(
2/11
BUL704
Electrical ratings
1
Electrical ratings
Table 1.
Symbol
V
CES
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
T
stg
T
J
Absolute maximum rating
Parameter
Collector-emitter voltage (V
BE
= 0)
Collector-emitter voltage (I
B
= 0)
Emitter-base voltage (I
C
= 0)
Collector current
Collector peak current (t
P
< 5ms)
Base current
Base peak current (t
P
< 5ms)
Total dissipation at T
c
= 25°C
Storage temperature
Max. operating junction temperature
Value
700
400
10
4
8
2
Unit
V
V
V
Table 2.
Symbol
R
thj-case
R
thj-amb
Thermal data
Thermal resistance junction-case
Thermal resistance junction-amb
bs
O
et
l
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ro
P
e
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d
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t(
Parameter
O
-
so
b
te
le
__max
__max
r
P
d
o
4
uc
s)
t(
A
A
A
A
70
W
°C
°C
-65 to 150
150
Value
1.78
62.5
Unit
°C/W
°C/W
3/11
Electrical characteristics
BUL704
2
Electrical characteristics
(T
case
= 25°C unless otherwise specified)
Table 3.
Symbol
I
CES
I
CEO
V
EBO
Electrical characteristics
Parameter
Collector cut-off current
(V
BE
=-1.5V)
Collector cut-off current
(I
B
=0)
Emitter-base voltage
(I
C
= 0)
Test Conditions
V
CE
=700V
V
CE
=700V
V
CE
=400V
I
E
=10mA
I
C
=100mA
L =25mH
10
Min.
Typ.
Max.
100
500
250
Unit
µA
µA
µA
V
T
j
=125°C
Collector-emitter
V
CEO(sus) (1)
sustaining voltage
(I
B
= 0)
V
CE(sat) (1)
Collector-emitter
saturation voltage
Base-emitter saturation
voltage
DC current gain
Resistive load
Storage time
Fall time
Inductive load
Storage time
Fall time
I
C
=1A
I
C
=2.5A
I
C
=1A
I
C
=2.5A
I
B
=0.2A
I
B
=0.5A
I
B
=0.2A
I
B
=0.5A
V
BE(sat) (1)
h
FE
t
s
t
f
b
O
et
l
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ro
P
e
t
s
t
f
uc
d
s)
t(
O
-
so
b
te
le
I
C
=2A
ro
P
400
10
14
uc
d
s)
t(
V
V
V
V
V
0.5
0.8
1.1
1.2
I
C
=10mA
V
CC
=125V
V
CE
=5V
V
CE
=5V
I
C
=2A
28
I
B1
= -I
B2
=0.4A
t
p
= 30µs
I
C
=2A
V
BE(off)
=-5V
(see fig.12 )
I
B1
=0.4A
R
BB
=0
Ω
1.5
0.2
3
0.4
µs
µs
0.6
0.1
1
0.2
µs
µs
V
clamp
=200V (see fig.13)
Note (1) Pulsed duration = 300
µs,
duty cycle
≤1.5%
4/11
BUL704
Electrical characteristics
2.1
Electrical characteristics (curves)
Figure 1.
Safe operating area
Figure 2.
Derating Curve
Figure 3.
DC current gain
Figure 4.
DC current gain
Figure 5.
bs
O
et
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ro
P
e
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d
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t(
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so
b
te
le
ro
P
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s)
t(
Collector-emitter saturation
voltage
Figure 6.
Base-emitter saturation
voltage
5/11
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