RURD660, RURD660S
Data Sheet
November 2013
6 A, 600 V, Ultrafast Diode
The
RURD660,
RURD660S
is an ultrafast diode with low
forward voltage drop. This device is intended for use as
freewheeling and clamping diodes in a variety of switching
power supplies and other power switching applications. It
is specially suited for use in switching power supplies and
industrial application.
Features
• Ultrafast Recovery
t
rr
= 60 ns (@ I
F
= 6 A)
• Max Forward Voltage, V
F
= 1.5 V (@ T
C
= 25°C)
• 600 V Reverse Voltage and High Reliability
• Avalanche Energy Rated
• RoHS Compliant
Applications
• Switching Power Supplies
• Power Switching Circuits
Ordering Information
PART NUMBER
RURD660
RURD660S
PACKAGE
TO-251-2L
TO-252-3L
BRAND
RUR660
RUR660
• General Purpose
Packaging
JEDEC STYLE TO-251
ANODE
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-252 variant in the tape and reel, i.e., RURD660S9A.
CATHODE
(FLANGE)
CATHODE
Symbol
K
JEDEC STYLE TO-252
CATHODE
(FLANGE)
A
CATHODE
ANODE
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
RURD660
RURD660S
UNIT
V
V
V
A
A
A
W
mJ
o
C
o
C
o
C
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RRM
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RWM
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
R
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
F(AV)
(T
C
= 155
o
C)
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FRM
(Square Wave, 20 kHz)
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FSM
(Halfwave, 1 Phase, 60 Hz)
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AVL
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
STG
, T
J
Maximum Lead Temperature for Soldering
Leads at 0.063 in. (1.6mm) from case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
PKG
600
600
600
6
12
60
50
10
-65 to 175
300
260
©2001 Fairchild Semiconductor Corporation
RURD660, RURD660S
Rev.
C1
1
www.fairchildsemi.com
RURD660, RURD660S
Electrical Specifications
SYMBOL
V
F
T
C
= 25
o
C, Unless Otherwise Specified
TEST CONDITION
I
F
= 6 A
I
F
= 6 A, T
C
= 150
o
C
I
R
V
R
= 600 V
V
R
= 600 V, T
C
= 150
o
C
t
rr
I
F
= 1 A, dI
F
/dt = 200 A/µs
I
F
= 6 A, dI
F
/dt = 200 A/µs
t
a
t
b
Q
RR
C
J
R
θJC
DEFINITIONS
V
F
= Instantaneous forward voltage (pw = 300
µs,
D = 2%).
I
R
= Instantaneous reverse current.
t
rr
= Reverse recovery time (See Figure 9), summation of t
a
+ t
b
.
t
a
= Time to reach peak reverse current (See Figure 9).
t
b
= Time from peak I
RM
to projected zero crossing of I
RM
based on a straight line from peak I
RM
through 25% of I
RM
(See Figure 9).
Q
RR
= Reverse recovery charge.
C
J
= Junction capacitance.
R
θJC
= Thermal resistance junction to case.
pw = Pulse width.
D = Duty cycle.
I
F
= 6 A, dI
F
/dt = 200 A/µs
I
F
= 6 A, dI
F
/dt = 200 A/µs
I
F
= 6 A, dI
F
/dt = 200 A/µs
V
R
= 10 V, I
F
= 0 A
MIN
-
-
-
-
-
-
-
-
-
-
-
TYP
-
-
-
-
-
-
28
16
150
25
-
MAX
1.5
1.2
100
500
55
60
-
-
-
-
3
UNIT
V
V
µA
µA
ns
ns
ns
ns
nC
pF
o
C/W
Typical Performance Curves
30
500
I
R
, REVERSE CURRENT (µA)
100
175
o
C
I
F
, FORWARD CURRENT (A)
10
10
1
100
o
C
100
o
C
175
o
C
1
25
o
C
0.1
25
o
C
0.01
0.5
0
0.5
1
1.5
2
2.5
V
F
, FORWARD VOLTAGE (V)
0.001
0
100
200
300
400
500
600
V
R
, REVERSE VOLTAGE (V)
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE
FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
©2001 Fairchild Semiconductor Corporation
RURD660, RURD660S
Rev.
C1
2
www.fairchildsemi.com
RURD660, RURD660S
Typical Performance Curves
50
T
C
= 25
o
C, dI
F
/dt = 200A/µs
t, RECOVERY TIMES (ns)
t, RECOVERY TIMES (ns)
40
trr
30
ta
20
tb
75
(Continued)
90
T
C
= 100
o
C, dI
F
/dt = 200A/µs
60
45
30
trr
ta
tb
10
15
0
0.5
0
0.5
1
I
F
, FORWARD CURRENT (A)
6
1
I
F
, FORWARD CURRENT (A)
6
FIGURE 3. t
rr
, t
a
AND t
b
CURVES vs FORWARD CURRENT
FIGURE 4. t
rr
, t
a
AND t
b
CURVES vs FORWARD CURRENT
T
C
= 175
o
C, dI
F
/dt = 200A/µs
t, RECOVERY TIMES (ns)
80
trr
60
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
100
6
5
DC
4
SQ. WAVE
3
2
1
0
145
40
ta
tb
20
0
0.5
1
I
F
, FORWARD CURRENT (A)
6
150
155
160
165
170
175
T
C
, CASE TEMPERATURE (
o
C)
FIGURE 5. t
rr
, t
a
AND t
b
CURVES vs FORWARD CURRENT
FIGURE 6. CURRENT DERATING CURVE
75
C
J
, JUNCTION CAPACITANCE (pF)
60
45
30
15
0
0
50
100
V
R
, REVERSE VOLTAGE (V)
150
200
FIGURE 7. JUNCTION CAPACITANCE vs REVERSE VOLTAGE
©2001 Fairchild Semiconductor Corporation
RURD660, RURD660S
Rev.
C1
3
www.fairchildsemi.com
RURD660, RURD660S
Test Circuits and Waveforms
V
GE
AMPLITUDE AND
R
G
CONTROL dI
F
/dt
t
1 AND
t
2
CONTROL I
F
L
DUT
R
G
V
GE
t
1
t
2
CURRENT
SENSE
+
V
DD
0
I
F
dI
F
dt
ta
trr
tb
IGBT
-
0.25 I
RM
I
RM
FIGURE 8. t
rr
TEST CIRCUIT
I = 1A
L = 20mH
R < 0.1Ω
E
AVL
= 1/2LI
2
[V
R(AVL)
/(V
R(AVL)
- V
DD
)]
Q
1
= IGBT (BV
CES
> DUT V
R(AVL)
)
L
CURRENT
SENSE
Q
1
V
DD
DUT
R
+
V
DD
I V
FIGURE 9. t
rr
WAVEFORMS AND DEFINITIONS
V
AVL
I
L
I
L
-
t
0
t
1
t
2
t
FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT
FIGURE 11. AVALANCHE CURRENT AND VOLTAGE
WAVEFORMS
©2001 Fairchild Semiconductor Corporation
RURD660, RURD660S
Rev.
C1
4
www.fairchildsemi.com
RURD660, RURD660S — Ultrafast Diode
Mechanical Dimensions
Figure 9. TO-252 3L (DPAK) - TO252 (D-PAK), MOLDED, 3 LEAD,OPTION AA&AB
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
https://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT252-0A3.
©2001 Fairchild Semiconductor Corporation
RURD660, RURD660S
Rev.
C1
5
www.fairchildsemi.com
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