PD - 95956A
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Features
IRLR3705ZPbF
IRLU3705ZPbF
HEXFET
®
Power MOSFET
D
Logic Level
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
V
DSS
= 55V
R
DS(on)
= 8.0mΩ
G
S
This HEXFET
®
Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating. These features combine
to make this design an extremely efficient and
reliable device for use in a wide variety of applications.
Description
I
D
= 42A
I-Pak
D-Pak
IRLR3705ZPbF IRLU3705ZPbF
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V
(Silicon Limited)
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C
= 25°C
I
DM
Continuous Drain Current, V
GS
@ 10V
(Package Limited)
Pulsed Drain Current
Max.
89
63
42
360
130
0.88
± 16
Units
A
P
D
@T
C
= 25°C Power Dissipation
V
GS
Linear Derating Factor
Gate-to-Source Voltage
W
W/°C
V
mJ
A
mJ
E
AS (Thermally limited)
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy Tested Value
E
AS
(Tested )
I
AR
E
AR
T
J
T
STG
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
d
Ã
h
110
190
See Fig.12a, 12b, 15, 16
-55 to + 175
g
°C
300 (1.6mm from case )
10 lbf in (1.1N m)
Thermal Resistance
R
θJC
R
θJA
R
θJA
Junction-to-Case
y
y
j
Parameter
Typ.
Max.
1.14
40
110
Units
°C/W
Junction-to-Ambient (PCB mount)
Junction-to-Ambient
HEXFET
®
is a registered trademark of International Rectifier.
j
ij
–––
–––
–––
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1
10/01/10
IRLR/U3705ZPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
R
DS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Min. Typ. Max. Units
55
–––
–––
–––
–––
–––
0.053
6.5
–––
–––
–––
–––
–––
–––
–––
–––
44
13
22
17
150
33
70
4.5
7.5
2900
420
230
1550
320
500
–––
–––
8.0
11
12
3.0
–––
20
250
200
-200
66
–––
–––
–––
–––
–––
–––
–––
nH
–––
–––
–––
–––
–––
–––
–––
pF
ns
nC
nA
V
S
µA
V
Conditions
V
GS
= 0V, I
D
= 250µA
V/°C Reference to 25°C, I
D
= 1mA
mΩ V
GS
= 10V, I
D
= 42A
V
GS
= 5.0V, I
D
V
GS
= 4.5V, I
D
V
GS(th)
gfs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
1.0
89
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 25V, I
D
= 42A
V
DS
= 55V, V
GS
= 0V
e
= 34A
e
= 21A
e
V
DS
= 55V, V
GS
= 0V, T
J
= 125°C
V
GS
= 16V
V
GS
= -16V
I
D
= 42A
V
DS
= 44V
V
GS
= 5.0V
V
DD
= 28V
I
D
= 42A
R
G
= 4.2
Ω
V
GS
= 5.0V
e
e
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz
G
D
S
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 44V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 44V
f
Source-Drain Ratings and Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
21
14
42
A
360
1.3
42
28
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 42A, V
GS
= 0V
T
J
= 25°C, I
F
= 42A, V
DD
= 28V
di/dt = 100A/µs
Ã
e
e
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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IRLR/U3705ZPbF
1000
TOP
VGS
12V
10V
8.0V
5.0V
4.5V
3.5V
3.0V
2.8V
1000
TOP
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
VGS
12V
10V
8.0V
5.0V
4.5V
3.5V
3.0V
2.8V
2.8V
10
10
2.8V
≤
60µs PULSE WIDTH
Tj = 25°C
1
0.1
1
10
100
≤
60µs PULSE WIDTH
Tj = 175°C
1
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000.0
100
Gfs, Forward Transconductance (S)
ID, Drain-to-Source Current
(Α)
TJ = 25°C
TJ = 175°C
100.0
TJ = 25°C
80
60
TJ = 175°C
10.0
40
VDS = 15V
≤
60µs PULSE WIDTH
1.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0 10.0
20
VDS = 8.0V
380µs PULSE WIDTH
0
0
10
20
30
40
50
60
70
80
ID, Drain-to-Source Current (A)
VGS, Gate-to-Source Voltage (V)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Typical Forward Transconductance
vs. Drain Current
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IRLR/U3705ZPbF
5000
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
12
VGS, Gate-to-Source Voltage (V)
ID= 42A
VDS = 44V
VDS= 28V
VDS= 11V
4000
10
8
6
4
2
0
C, Capacitance (pF)
3000
Ciss
2000
1000
Coss
Crss
0
1
10
100
0
20
40
60
80
100
VDS, Drain-to-Source Voltage (V)
QG Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs.
Gate-to-Source Voltage
1000.0
10000
ISD, Reverse Drain Current (A)
ID, Drain-to-Source Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS(on)
1000
100.0
TJ = 175°C
100
100µsec
1msec
10msec
Tc = 25°C
Tj = 175°C
Single Pulse
1
10
VDS , Drain-toSource Voltage (V)
10.0
10
TJ = 25°C
1.0
1
VGS = 0V
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0.1
DC
100
VSD, Source-to-Drain Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRLR/U3705ZPbF
100
LIMITED BY PACKAGE
80
ID , Drain Current (A)
2.5
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 42A
VGS = 10V
2.0
60
1.5
40
20
1.0
0
25
50
75
100
125
150
175
TC , Case Temperature (°C)
0.5
-60 -40 -20 0
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 9.
Maximum Drain Current vs.
Case Temperature
Fig 10.
Normalized On-Resistance
vs. Temperature
10
Thermal Response ( ZthJC )
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
0.01
τ
J
τ
J
τ
1
τ
1
R
1
R
1
τ
2
R
2
R
2
τ
C
τ
2
τ
0.1
Ri (°C/W)
τi
(sec)
0.6984 0.000465
0.4415
0.004358
Ci=
τi/Ri
Ci i/Ri
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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