SMD Schottky Barrier Diode
CDBT0540-G
Reverse Voltage: 40 Volts
Forward Current: 0.5 Amp
RoHS Device
SOT-23
Features
- Small surface mount type.
- Low reverse current and low forward voltage.
- High reliability.
0.055(1.40)
0.047(1.20)
0.118(3.00)
0.110(2.80)
3
Mechanical data
- Case: SOT-23, molded plastic.
- Terminals: Solderable per MIL-STD-750,
method 2026.
- Polarity: Indicated by cathode band.
- Weight: 0.008 grams(approx.)
0.020(0.50)
0.012(0.30)
0.045(1.15)
0.035(0.90)
1
0.079(2.00)
0.071(1.80)
2
0.006(0.15)
0.003(0.08)
0.100(2.55)
0.089(2.25)
Circuit diagram
3
0.020(0.50)
0.012(0.30)
Dimensions in inches and (millimeter)
1
2
Maximum Ratings
(at Ta=25°C unless otherwise noted)
Parameter
Peak reverse voltage
DC reverse voltage
Non-repetitive peak forward surge voltage
Mean rectifying current
Power dissipation
Thermal resistance
Junction temperature
Storage temperature range
Junction to ambient
t=8.3ms
Conditions
Symbol
V
RM
V
R
I
FSM
I
O
P
D
R
θJA
T
J
T
STG
Value
40
40
3
0.5
250
400
125
-55 to +150
Unit
V
V
A
A
mW
°C/W
°C
°C
Electrical Characteristics
(at Ta=25°C unless otherwise noted)
Parameter
Reverse breakdown voltage
Forward voltage
Conditions
I
R
=100μA
I
F
=500mA
V
R
=10V
Symbol
V
BR
V
F
Min
40
Typ.
Max
Unit
V
0.55
30
V
Reverse current
V
R
=30V
V
R
=0V, f=1MHz
Capacitance between terminals
V
R
=10V, f=1MHz
I
R
50
125
C
T
20
μA
pF
Company reserves the right to improve product design , functions and reliability without notice.
QW-BA016
REV:C
Page 1
Comchip Technology CO., LTD.
SMD Schottky Barrier Diode
RATING AND CHARACTERISTIC CURVES (CDBT0540-G)
Fig.1 - Forward Characteristics
1000
1000
Fig.2 - Reverse Characteristics
Forward Current, I
F
(mA)
100
T
A
=100°C
10
T
A
=25°C
Reverse Current, I
R
(uA)
100
T
A
=100
O
C
10
T
A
=25
O
C
1
1
0.1
0.01
0
100
200
300
400
500
0.1
0
5
10
15
20
25
30
35
Forward Voltage, V
F
(mV)
Reverse Voltage, V
R
(V)
Fig.3 - Capacitance Characteristics
Capacitance Between Terminals, C
T
(pF)
100
T
J
=25°C
f=1MHz
Fig.4 - Power Derating Curve
Mounted on glass epoxy PCBs
80
Power Dissipation, P
D
(mW)
0
5
10
15
20
25
250
200
150
100
50
0
0
25
50
75
100
125
60
40
20
0
Reverse Voltage, V
R
(V)
Ambient Temperature, T
A
(°C)
Company reserves the right to improve product design , functions and reliability without notice.
QW-BA016
REV:C
Page 2
Comchip Technology CO., LTD.
SMD Schottky Barrier Diode
Reel Taping Specification
d
D
2
P0
P1
XXX
B
F
12
0
o
E
D
1
D
W
1
SYMBOL
A
3.15
±
0.10
0.124
±
0.004
B
2.77
±
0.10
0.109
±
0.004
C
1.22
±
0.10
0.048
±
0.004
d
1.50 ± 0.10
0.059 ± 0.004
D
178.00
±
2.00
7.008
±
0.079
D
1
54.40
±
1.00
2.142
±
0.039
D
2
13.00
±
1.00
0.512
±
0.039
SOT-23
(mm)
(inch)
SYMBOL
E
1.75
±
0.10
0.069
±
0.004
F
3.50
±
0.10
0.138
±
0.004
P
4.00
±
0.10
0.157
±
0.004
P
0
4.00
±
0.10
0.157
±
0.004
P
1
2.00
±
0.10
W
8.00
+
0.30 /
-
0.10
W
1
12.30
±
1.00
0.484
±
0.039
SOT-23
(mm)
(inch)
0.079
±
0.004
0.315
+
0.012 /
-
0.004
Company reserves the right to improve product design , functions and reliability without notice.
QW-BA016
REV:C
Page 3
Comchip Technology CO., LTD.
SMD Schottky Barrier Diode
Marking Code
3
Part Number
CDBT0540-G
Marking Code
D3A
D3A
1
2
Suggested PAD Layout
SOT-23
SIZE
(mm)
A
B
C
D
E
0.90
0.80
0.95
2.00
2.90
(inch)
0.035
0.031
0.037
0.079
0.114
B
A
D
E
C
C
Standard Packaging
REEL PACK
Case Type
REEL
( pcs )
Reel Size
(inch)
SOT-23
3,000
7
Company reserves the right to improve product design , functions and reliability without notice.
QW-BA016
REV:C
Page 4
Comchip Technology CO., LTD.
嵌入式系统
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