NSM4002MR6
Dual NPN Transistors for
Driving LEDs
NSM4002MR6 contains a single two NPN transistors. The base of
the Q2 NPN transistor is internally connected to the collector of the Q1
NPN transistor. This device is designed to replace a discrete solution
that is common for providing a constant current by integrating these
two components into a single device. NSM4002MR6 is housed in a
SC−74 package which is ideal for surface mount applications in space
constrained applications.
Features
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•
•
•
•
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Dual NPN Transistors
for Driving LEDs
6
5
4
Q2
6, 5
4
Q2
Typical Applications
•
LED Lighting
•
Driver Circuits
MAXIMUM RATINGS Q
1
(T
A
= 25°C)
Rating
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
40
60
6.0
200
Unit
Vdc
Vdc
Vdc
mAdc
Q1
1
2
3
Q1
1
2
3
4
6 5
1 2
3
SC−74
CASE 318F
MAXIMUM RATINGS Q
2
(T
A
= 25°C)
Rating
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
45
50
5.0
500
Unit
Vdc
Vdc
Vdc
mAdc
1AM
M
G
= Device Code
= Date Code*
= Pb−Free Package
1AM MG
G
MARKING DIAGRAM
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Rating
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage
Temperature Range
1. FR− 4, 100 mm
2
, 2 oz. Cu.
2. FR− 4, 500 mm
2
, 2 oz. Cu.
©
Semiconductor Components Industries, LLC, 2015
Symbol
P
D
(Note 1)
R
qJA
(Note 1)
P
D
(Note 2)
R
qJA
(Note 2)
T
J
, T
stg
Max
260
2.08
480
Unit
mW
mW/°C
°C/W
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device
Package
SC−74
(Pb−Free)
Shipping
†
3000 /
Tape & Reel
300
2.4
416
−55 to +150
mW
mW/°C
°C/W
°C
NSM4002MR6T1G
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
1
May, 2015 − Rev. 1
Publication Order Number:
NSM4002MR6/D
NSM4002MR6
Table 1. ELECTRICAL CHARACTERISTICS Q
1
(T
A
= 25°C, unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (I
C
= 1.0 mAdc, I
B
= 0)
Collector−Base Breakdown Voltage (I
C
= 10
mAdc,
I
E
= 0)
Emitter−Base Breakdown Voltage (I
E
= 10
mAdc,
I
C
= 0)
Collector Cutoff Current (V
CE
= 30 Vdc, V
EB(OFF)
= 3.0 Vdc)
Base Cutoff Current (V
CE
= 30 Vdc, V
EB(OFF)
= 3.0 Vdc)
ON CHARACTERISTICS
DC Current Gain (Note 3)
(I
C
= 100
mA,
V
CE
= 1.0 V)
(I
C
= 1.0 mA, V
CE
= 1.0 V)
(I
C
= 10 mA, V
CE
= 1.0 V)
(I
C
= 50 mA, V
CE
= 1.0 V)
(I
C
= 100 mA, V
CE
= 1.0 V)
Collector−Emitter Saturation Voltage (Note 3)
(I
C
= 10 mA, I
B
= 1.0 mA)
(I
C
= 50 mA, I
B
= 5.0 mA)
Base−Emitter Saturation Voltage (Note 3)
(I
C
= 10 mA, I
B
= 1.0 mA)
(I
C
= 50 mA, I
B
= 5.0 mA)
Cutoff Frequency (I
C
= 10 mA, V
CE
= 20 V, f = 100 MHz)
Output Capacitance (V
CB
= 5.0 V, f = 1.0 MHz)
Input Capacitance (V
EB
= 0.5 V, f = 1.0 MHz)
h
FE
40
70
100
60
30
V
CE(sat)
−
−
V
BE(sat)
0.65
−
f
T
C
obo
C
obo
300
−
−
0.85
0.95
−
4.0
8.0
MHz
pF
pF
0.20
0.30
V
−
−
300
−
−
V
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CEX
I
BL
40
60
6.0
−
−
−
−
−
50
50
Vdc
Vdc
Vdc
nAdc
nAdc
Symbol
Min
Max
Unit
Table 2. ELECTRICAL CHARACTERISTICS Q
2
(T
A
= 25°C, unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (I
C
= 10 mAdc, I
B
= 0)
Collector−Base Breakdown Voltage (I
C
= 10
mAdc,
I
E
= 0)
Emitter−Base Breakdown Voltage (I
E
= 1.0
mAdc,
I
C
= 0)
Collector Cutoff Current (V
CB
= 20 Vdc, I
E
= 0)
ON CHARACTERISTICS
DC Current Gain (Note 3)
(I
C
= 100 mA, V
CE
= 1.0 V)
(I
C
= 500 mA, V
CE
= 1.0 V)
Collector
*Emitter
Saturation Voltage (Note 3)
(I
C
= 500 mA, I
B
= 50 mA)
Base*Emitter Turn−on Voltage (Note 3)
(I
C
= 500 mA, V
CE
= 1.0 V)
Cutoff Frequency (I
C
= 10 mA, V
CE
= 5.0 V, f = 100 MHz
Output Capacitance (V
CB
= 10 V, f = 1.0 MHz
h
FE
250
40
V
CE(sat)
−
V
BE(on)
−
f
T
C
obo
100
−
−
−
10
1.2
−
−
MHz
pF
−
0.7
V
−
−
600
−
V
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
45
50
5.0
−
−
−
−
−
−
−
−
0.1
Vdc
Vdc
Vdc
mAdc
Symbol
Min
Typ
Max
Unit
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle
v
2%.
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2
NSM4002MR6
Application Section
Introduction
The NSM4002MR6 is designed to be used as a constant
current driver for LEDs. The two resistors in Figure 1 are
external from the NSM4002MR6 to allow for
customization. R
set
controls the current through the load,
and R
1
controls the bias current.
based on the biasing current. To determine the R
set
value
simply divide the V
BE
voltage by the desired driving
current.
Selecting R
1
The R
1
resistor is used to set the biasing current. The
biasing current is split between the base of Q2 and the
collector of Q1. When desiring the lowest overhead voltage
R
1
should be set as high as possible. It is important to ensure
it is not set too high so that Q2 falls out of saturation.
However, a lower R
1
value will drive more current through
Q1. This will reduce the change in the driving current as
temperature is increased. It will also allow a higher driving
current to be achieved while maintaining good current
regulation. The side affect of a lower R
1
value is that it
reduces the overall efficiency because more power is being
used in the driving circuit.
Input Votlage, V
s
The maximum input voltage, V
s
, is determined by the
load. No more than 45 V can be applied across Q2. This leads
to:
V
s(max)
+
V
Load
)
45 V
Figure 1. Typical Application Schematic
Selecting R
set
Overhead Voltage
(eq. 1)
The R
set
resistor is used to set the driving current of the
load. It is connected across the Base−Emitter junction of Q1.
This V
BE
voltage is what sets up the constant voltage across
the R
set
resistor. Figure 5 gives the typical values of V
BE
The overhead voltage of this device to reach full current
regulation is the combination of the V
BE
voltages of the two
transistors. Under typical conditions this overhead voltage
will typically be 1.4 V.
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NSM4002MR6
TYPICAL CHARACTERISTICS − Q1
1000
T
J
= +150°C
h FE, DC CURRENT GAIN
+25°C
100
- 55°C
V
CE
= 1.0 V
10
1
0.1
1.0
10
I
C
, COLLECTOR CURRENT (mA)
100
1000
Figure 2. DC Current Gain
VCE, COLLECTOR EMITTER VOLTAGE (VOLTS)
1.0
T
J
= 25°C
0.8
I
C
= 1.0 mA
10 mA
30 mA
100 mA
0.6
0.4
0.2
0
0.01
0.02
0.03
0.05
0.07
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
I
B
, BASE CURRENT (mA)
Figure 3. Collector Saturation Region
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NSM4002MR6
TYPICAL CHARACTERISTICS − Q1
0.8
V
CE(sat)
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
V
BE(sat)
, BASE−EMITTER
SATURATION VOLTAGE (V)
0.7
0.6
0.5
−55°C
0.4
0.3
0.2
0.1
0
0.001
0.01
0.1
1
I
C
, COLLECTOR CURRENT (A)
I
C
/I
B
= 10
150°C
25°C
1.4
I
C
/I
B
= 10
1.2
1.0
−55°C
0.8
25°C
0.6
0.4
0.2
0.0001
0.001
0.01
0.1
1
I
C
, COLLECTOR CURRENT (A)
150°C
Figure 4. Collector Emitter Saturation Voltage
vs. Collector Current
V
BE(on)
, BASE−EMITTER VOLTAGE (V)
1.4
1.2
1.0
0.8
0.6
0.4 150°C
0.2
0.0001
0.001
0.01
0.1
1
I
C
, COLLECTOR CURRENT (A)
−55°C
25°C
V
CE
= 1 V
COEFFICIENT (mV/
°
C)
1.0
0.5
Figure 5. Base Emitter Saturation Voltage vs.
Collector Current
+25°C TO +125°C
q
VC
FOR V
CE(sat)
0
- 0.5
- 55°C TO +25°C
- 55°C TO +25°C
- 1.0
+25°C TO +125°C
- 1.5
- 2.0
q
VB
FOR V
BE(sat)
0
20
40
60
80
100
120
140
160
180 200
I
C
, COLLECTOR CURRENT (mA)
Figure 6. Base Emitter Voltage vs. Collector
Current
Figure 7. Temperature Coefficients
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