MBRB25H35CT, MBRB25H45CT, MBRB25H60CT
www.vishay.com
Vishay General Semiconductor
Dual Common Cathode Schottky Rectifier
High Barrier Technology for Improved High Temperature Performance
FEATURES
Power pack
Guardring for overvoltage protection
Lower power losses, high efficiency
Low forward voltage drop
Low leakage current
High forward surge capability
High frequency operation
Meets MSL level 1, per J-STD-020, LF maximum peak
of 245 °C
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
•
•
•
•
•
•
•
•
D
2
PAK
K
(TO-263AB)
2
1
MBRB25HxxCT
PIN 1
PIN 2
K
TYPICAL APPLICATIONS
HEATSINK
For use in low voltage, high frequency rectifier of switching
mode power supplies, freewheeling diodes, DC/DC
converters, or polarity protection application.
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
I
R
T
J
max.
Package
Diode variations
2 x 15 A
35 V, 45 V, 60 V
150 A
0.54 V, 0.60 V
100 μA
175 °C
D
2
PAK
(TO-263AB)
Common cathode
MECHANICAL DATA
Case:
D
2
PAK (TO-263AB)
Molding compound meets UL 94 V-0 flammability rating
Base P/NHE3_X - RoHS-compliant, AEC-Q101 qualified
(“_X” denotes revision code, e.g. A, B, ...)
Terminals:
matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
HE3 suffix meets JESD 201 class 2 whisker test
Polarity:
as marked
MAXIMUM RATINGS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
Max. average forward rectified current (fig. 1)
total device
per diode
SYMBOL MBRB25H35CT
V
RRM
V
RWM
V
DC
I
F(AV)
E
AS
I
FSM
I
RRM
E
RSM
V
C
dV/dt
T
J
, T
STG
1.0
25
35
35
35
MBRB25H45CT
45
45
45
30
15
80
150
1.0
25
25
10 000
-65 to +175
0.5
20
MBRB25H60CT
60
60
60
A
mJ
A
A
mJ
kV
V/μs
°C
V
UNIT
Non-repetitive avalanche energy per diode at 25 °C,
I
AS
= 4 A, L = 10 mH
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load per diode
Peak repetitive reverse surge current per diode at t
p
= 2.0 μs,
1 kHz
Peak non-repetitive reverse energy (8/20 μs waveform)
Electrostatic discharge capacitor voltage
Human body model: C = 100 pF, R = 1.5 k
Voltage rate of change (rated V
R
)
Operating junction and storage temperature range
Revision: 20-Nov-17
Document Number: 88789
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
MBRB25H35CT, MBRB25H45CT, MBRB25H60CT
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
MBRB25H35CT
MBRB25H45CT
TYP.
Maximum instantaneous forward voltage
per diode
I
F
= 15 A
V
F (1)
I
F
= 30 A
Maximum reverse current per diode
I
R (2)
Rated V
R
-
0.50
-
0.63
-
6.0
MAX.
0.64
0.54
0.74
0.67
100
20
MBRB25H60CT
TYP.
-
0.56
-
0.68
-
4.0
MAX.
0.70
0.60
0.85
0.72
100
20
μA
mA
V
UNIT
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: pulse width
40 ms
THERMAL CHARACTERISTICS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
Thermal resistance, junction to case per diode
SYMBOL
R
JC
MBRB
1.5
UNIT
°C/W
ORDERING INFORMATION
(Example)
PACKAGE
TO-263AB
TO-263AB
PREFERRED P/N
MBRB25H60CTHE3_A/P
MBRB25H60CTHE3_A/I
(1)
(1)
UNIT WEIGHT (g)
1.35
1.35
PACKAGE CODE
P
I
BASE QUANTITY
50/tube
800/reel
DELIVERY MODE
Tube
Tape and reel
Note
(1)
AEC-Q101 qualified
Revision: 20-Nov-17
Document Number: 88789
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
MBRB25H35CT, MBRB25H45CT, MBRB25H60CT
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(T
C
= 25 °C unless otherwise noted)
40
100
In
s
tantaneou
s
Rever
s
e Leakage
Current (mA)
Average Forward Current (A)
10
T
J
= 150 °C
T
J
= 125 °C
MBRB25H35CT, MBRB25H45CT
MBRB25H60CT
30
1
20
0.1
0.01
10
0.001
T
J
= 25 °C
0
0
25
50
75
100
125
150
175
0.0001
0
20
40
60
80
100
Case Temperature (°C)
Percent of Rated Peak Reverse Voltage (%)
Fig. 1 - Forward Derating Curve (Total)
Fig. 4 - Typical Reverse Characteristics Per Diode
150
10 000
T
J
= T
J
Max.
8.3 ms
Single
Half
Sine-Wave
Peak Forward
Surge
Current (A)
100
Junction Capacitance (pF)
125
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
75
1000
50
25
MBRB25H35CT, MBRB25H45CT
MBRB25H60CT
100
1
10
100
0
0.1
1
10
100
Number of Cycles at 60 Hz
Reverse Voltage (V)
Fig. 2 - Maximum Non-Repetitive Peak Forward
Surge Current Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
100
T
J
= 150 °C
10
T
J
= 25 °C
1
T
J
= 125 °C
0.1
MBRB25H35CT, MBRB25H45CT
MBRB25H60CT
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
10
Transient Thermal Impedance (°C/W)
In
s
tantaneou
s
Forward Current (A)
1
0.01
0.1
0.01
0.1
1
10
Instantaneous Forward Voltage (V)
t - Pulse Duration (s)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
Revision: 20-Nov-17
Document Number: 88789
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
MBRB25H35CT, MBRB25H45CT, MBRB25H60CT
www.vishay.com
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
Vishay General Semiconductor
D
2
PAK (TO-263AB)
0.411 (10.45)
0.380 (9.65)
0.245 (6.22)
MIN.
K
0.360 (9.14)
0.320 (8.13)
1
K
2
0.055 (1.40)
0.047 (1.19)
0.190 (4.83)
0.160 (4.06)
0.055 (1.40)
0.045 (1.14)
Mounting Pad Layout
0.42 (10.66) min.
0.33 (8.38) min.
0.624 (15.85)
0.591 (15.00)
0.670 (17.02)
0.591 (15.00)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.15 (3.81) min.
0.08 (2.032) MIN.
0.105 (2.67)
0.095 (2.41)
0.037 (0.940)
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
0.205 (5.20)
0.195 (4.95)
0.140 (3.56)
0.110 (2.79)
Revision: 20-Nov-17
Document Number: 88789
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
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particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
1
Document Number: 91000