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ISL9R860P2, ISL9R860S3ST —
STEALTH™ Diode
November 2013
ISL9R860P2, ISL9R860S3ST
8 A, 600 V,
STEALTH™ Diode
Features
• Stealth Recovery
t
rr = 28 ns (@ IF = 8 A)
• Max Forward Voltage, VF = 2.4 V (@ TC = 25°C)
• 600 V Reverse Voltage and High Reliability
• Avalanche Energy Rated
• RoHS Compliant
Description
The ISL9R860P2, ISL9R860S3ST
is a STEALTH™ diode
optimized for low loss performance in high frequency hard
switched applications. The STEALTH™ family exhibits low
reverse recovery current (I
RR
) and exceptionally soft recovery
under typical operating conditions. This device is intended for
use as a free wheeling or boost diode in power supplies and
other power switching applications. The low I
RR
and short ta
phase reduce loss in switching transistors. The soft recovery
minimizes ringing, expanding the range of conditions under
which the diode may be operated without the use of additional
snubber circuitry. Consider using the STEALTH™ diode with
an SMPS IGBT to provide the most efficient and highest
power density design at lower cost.
Applications
• SMPS
FWD
• Hard Switched PFC Boost Diode
• UPS Free Wheeling Diode
• Motor Drive FWD
• Snubber Diode
Package
JEDEC TO-220AC-2L
ANODE
CATHODE
Symbol
JEDEC TO-263AB(D
2
-PAK)
CATHODE
(FLANGE)
K
CATHODE
(FLANGE)
N/C
ANODE
A
Device Maximum Ratings
T
C
= 25°C unless otherwise noted
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
I
FRM
I
FSM
P
D
E
AVL
T
J
, T
STG
T
L
T
PKG
Parameter
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current (T
C
= 147 C)
Repetitive Peak Surge Current (20kHz Square Wave)
Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz)
Power Dissipation
o
Ratings
600
600
600
8
16
100
85
20
-55 to 175
300
260
Unit
V
V
V
A
A
A
W
mJ
°C
°C
°C
Avalanche Energy (1 A, 40 mH)
Operating and Storage Temperature Range
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, See Techbrief TB334
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
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