HCF40107B
DUAL 2-INPUT NAND BUFFER/DRIVER
s
s
s
s
s
s
32 TIMES STANDARD B-SERIES OUTPUT
CURRENT DRIVE SINKING CAPABILITY -
136 mA TYP. AT V
DD
= 10V, V
DS
= 1V
QUIESCENT CURRENT SPECIF. UP TO 20V
5V, 10V AND 15V PARAMETRIC RATINGS
INPUT LEAKAGE CURRENT
I
I
= 100nA (MAX) AT V
DD
= 18V T
A
= 25°C
100% TESTED FOR QUIESCENT CURRENT
MEETS ALL REQUIREMENTS OF JEDEC
JESD13B "STANDARD SPECIFICATIONS
FOR DESCRIPTION OF B SERIES CMOS
DEVICES"
DIP
SOP
ORDER CODES
PACKAGE
DIP
SOP
TUBE
HCF40107BEY
HCF40107BM1
T&R
HCF40107M013TR
DESCRIPTION
HCF40107B is a monolithic integrated circuit
fabricated in Metal Oxide Semiconductor
technology available in DIP and SOP packages.
HCF40107B is a dual 2-input NAND buffer/driver
containing two independent 2-input NAND buffers
with open-drain single n-channel transistor
outputs. This device features a wired-OR
capability and high output sink current capability
(136 mA typ. at V
DD
= 10V, V
DS
= 1V).
PIN CONNECTION
October 2002
1/11
HCF40107B
INPUT EQUIVALENT CIRCUIT
PIN DESCRIPTION
PIN No
2, 1, 7, 6
3, 5
4
8
SYMBOL
A, B, D, E
C,F
V
SS
V
DD
NAME AND FUNCTION
Input
Outputs
Negative Supply Voltage
Positive Supply Voltage
FUNCTIONAL DIAGRAM
TRUTH TABLE
A
L
H
L
H
B
L
L
H
H
H*
H*
H*
L
C
Z
#
Z
#
Z
#
* : Requires external and pull-up resistor (R
L
) to V
DD
.
# : Without pull-up resistor (3-state).
2/11
HCF40107B
LOGIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DD
V
I
I
I
P
D
T
op
T
stg
Supply Voltage
DC Input Voltage
DC Input Current
Power Dissipation per Package
Power Dissipation per Output Transistor
Operating Temperature
Storage Temperature
Parameter
Value
-0.5 to +22
-0.5 to V
DD
+ 0.5
±
10
200
100
-55 to +125
-65 to +150
Unit
V
V
mA
mW
mW
°C
°C
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied.
All voltage values are referred to V
SS
pin voltage.
RECOMMENDED OPERATING CONDITIONS
Symbol
V
DD
V
I
T
op
Supply Voltage
Input Voltage
Operating Temperature
Parameter
Value
3 to 20
0 to V
DD
-55 to 125
Unit
V
V
°C
3/11
HCF40107B
DC SPECIFICATIONS
Test Condition
Symbol
Parameter
V
I
(V)
0/5
0/10
0/15
0/20
0.5/4.5
1/9
1.5/13.5
4.5/0.5
9/1
13.5/1.5
0.4
1
0.5
1
0.5
<1
<1
<1
<1
<1
<1
V
O
(V)
|I
O
| V
DD
(µA) (V)
5
10
15
20
5
10
15
5
10
15
5
5
10
10
15
T
A
= 25°C
Min.
Typ.
0.02
0.02
0.02
0.04
3.5
7
11
1.5
3
4
21
44
49
89
66
32
68
74
136
100
16
30
37
68
50
Max.
5
10
20
100
3.5
7
11
1.5
3
4
12
25
28
51
38
Value
-40 to 85°C
Min.
Max.
150
300
600
3000
3.5
7
11
1.5
3
4
-55 to 125°C
Min.
Max.
30
60
120
600
Unit
I
L
Quiescent Current
µA
V
IH**
High Level Input
Voltage
Low Level Input
Voltage
Output Sink
Current
5
5
10
10
15
V
V
IL**
V
I
OL
mA
Output Drive
Current
I
IH,
I
IL
Input Leakage
Current
I
OH,
I
OL
3-State Output
Leakage Current
***
C
I
Input Capacitance
I
OH
C
O
Output
Capacitance
No Internal Pull-up Device
0/18
0/18
Any Input
18
Any Input
Any Output
18
18
±10
-5
±10
-4
5
30
mA
±0.1
2
7.5
±0.1
2
±1
20
µA
µA
pF
pF
The Noise Margin for both "1" and "0" level is: 1V min. with V
DD
=5V, 2V min. with V
DD
=10V, 2.5V min. with V
DD
=15V
** Measured with external pull-up resistor, R
L
= 10kΩ to V
DD
.
*** Forced output disabled.
DYNAMIC ELECTRICAL CHARACTERISTICS
(T
amb
= 25°C, C
L
= 50pF, R
L
= 200KΩ, t
r
= t
f
= 20 ns)
Test Condition
Symbol
Parameter
V
DD
(V)
5
10
15
5
10
15
5
10
15
5
10
15
R
L
* = 120Ω
Min.
Value (*)
Typ.
100
45
30
100
60
50
50
20
10
50
35
25
Max.
200
90
60
200
120
100
100
40
20
100
70
50
ns
Unit
t
PHL
t
PLH
Propagation Delay Time
High to Low
Low to High
R
L
* = 120Ω
ns
t
THL
t
TLH
Transition Time
High to Low
Low to High
R
L
* = 120Ω
ns
R
L
* = 120Ω
ns
(*) R
L
is external pull-up resistor to V
DD.
4/11
HCF40107B
TYPICAL APPLICATIONS
Line-driver Circuit.
A 2.2-watt Incandescent Lamp-driver Circuit.
Interface of 40107B with Triac, with COS/MOS
Component and Triac isolated.
Solenoid Driver Circuit
Direct Dc Driver Interface of 40107B with a Triac.
5/11