1N4678 THRU 1N4717
SILICON ZENER DIODE
LOW LEVEL
500mW, 1.8 THRU 43 VOLT
5% TOLERANCE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 1N4678 series
devices are silicon Zener diodes designed for
applications requiring an extremely low operating
current (50μA), and low leakage.
MARKING: FULL PART NUMBER
DO-35 CASE
MAXIMUM RATINGS:
(TL=75°C)
Power Dissipation
Operating and Storage Junction Temperature
SYMBOL
PD
TJ, Tstg
500
-65 to +200
UNITS
mW
°C
ELECTRICAL CHARACTERISTICS:
(TA=25°C) VF=1.5V MAX @ IF=100mA (for all types)
Zener
Voltage
VZ @ IZT
MIN
V
1N4678
1N4679
1N4680
1N4681
1N4682
1N4683
1N4684
1N4685
1N4686
1N4687
1N4688
1N4689
1N4690
1N4691
1N4692
1N4693
1N4694
1N4695
1N4696
1N4697
1.710
1.900
2.090
2.280
2.565
2.850
3.135
3.420
3.705
4.085
4.465
4.845
5.320
5.890
6.460
7.125
7.790
8.265
8.645
9.500
NOM
V
1.8
2.0
2.2
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
8.7
9.1
10
MAX
V
1.890
2.100
2.310
2.520
2.835
3.150
3.465
3.780
4.095
4.515
4.935
5.355
5.880
6.510
7.140
7.875
8.610
9.135
9.555
10.50
Test
Current
IZT
μA
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
Maximum
Reverse Leakage
Current
IR
μA
7.5
5.0
4.0
2.0
1.0
0.8
7.5
7.5
5.0
4.0
10
10
10
10
10
10
1.0
1.0
1.0
1.0
@ VR
V
1.0
1.0
1.0
1.0
1.0
1.0
1.5
2.0
2.0
2.0
3.0
3.0
4.0
5.0
5.1
5.7
6.2
6.6
6.9
7.6
Maximum
Voltage
Change*
ΔVZ
V
0.70
0.70
0.75
0.80
0.85
0.90
0.95
0.95
0.97
0.99
0.99
0.97
0.96
0.95
0.90
0.75
0.50
0.10
0.08
0.10
Maximum
Regulator
Current
IZM
mA
120.0
110.0
100.0
95.0
90.0
85.0
80.0
75.0
70.0
65.0
60.0
55.0
50.0
45.0
35.0
31.8
29.0
27.6
26.2
24.8
Type
* ΔVZ=VZ @ 100μA Minus VZ @ 10μA
R5 (8-October 2015)
1N4678 THRU 1N4717
SILICON ZENER DIODE
LOW LEVEL
500mW, 1.8 THRU 43 VOLT
5% TOLERANCE
ELECTRICAL CHARACTERISTICS - Continued:
(TA=25°C) VF=1.5V MAX @ IF=100mA (for all types)
Zener
Voltage
VZ @ IZT
MIN
V
1N4698
1N4699
1N4700
1N4701
1N4702
1N4703
1N4704
1N4705
1N4706
1N4707
1N4708
1N4709
1N4710
1N4711
1N4712
1N4713
1N4714
1N4715
1N4716
1N4717
10.45
11.40
12.35
13.30
14.25
15.20
16.15
17.10
18.05
19.00
20.90
22.80
23.75
25.65
26.60
28.50
31.35
34.20
37.05
40.85
NOM
V
11
12
13
14
15
16
17
18
19
20
22
24
25
27
28
30
33
36
39
43
MAX
V
11.55
12.60
13.65
14.70
15.75
16.80
17.85
18.90
19.95
21.00
23.10
25.20
26.25
28.35
29.40
31.50
34.65
37.80
40.95
45.15
Test
Current
IZT
μA
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
Maximum
Reverse Leakage
Current
IR
μA
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
@ VR
V
8.4
9.1
9.8
10.6
11.4
12.1
12.9
13.6
14.4
15.2
16.7
18.2
19.0
20.4
21.2
22.8
25.0
27.3
29.6
32.6
Maximum
Voltage
Change*
ΔVZ
V
0.11
0.12
0.13
0.14
0.15
0.16
0.17
0.18
0.19
0.20
0.22
0.24
0.25
0.27
0.28
0.30
0.33
0.36
0.39
0.43
Maximum
Regulator
Current
IZM
mA
21.6
20.4
19.0
17.5
16.3
15.4
14.5
13.2
12.5
11.9
10.8
9.9
9.5
8.8
8.5
7.9
7.2
6.6
6.1
5.5
Type
* ΔVZ=VZ @ 100μA Minus VZ @ 10μA
DO-35 CASE - MECHANICAL OUTLINE
C
B
A
D
D
MARKING: FULL PART NUMBER
R5 (8-October 2015)
w w w. c e n t r a l s e m i . c o m
1N4678 THRU 1N4717
SILICON ZENER DIODE
LOW LEVEL
500mW, 1.8 THRU 43 VOLT
5% TOLERANCE
TYPICAL ELECTRICAL CHARACTERISTICS
R5 (8-October 2015)
w w w. c e n t r a l s e m i . c o m
1N4678 THRU 1N4717
SILICON ZENER DIODE
LOW LEVEL
500mW, 1.8 THRU 43 VOLT
5% TOLERANCE
TYPICAL ELECTRICAL CHARACTERISTICS
R5 (8-October 2015)
w w w. c e n t r a l s e m i . c o m
1N4678 THRU 1N4717
SILICON ZENER DIODE
LOW LEVEL
500mW, 1.8 THRU 43 VOLT
5% TOLERANCE
TYPICAL ELECTRICAL CHARACTERISTICS
R5 (8-October 2015)
w w w. c e n t r a l s e m i . c o m
NXP MCU
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