CDM22010-650
SILICON
N-CHANNEL POWER MOSFET
10 AMP, 650 VOLT
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CDM22010-650
is a high current, 650 Volt N-Channel power MOSFET
designed for high voltage, fast switching applications
such as Power Factor Correction (PFC), lighting and
power inverters. This MOSFET combines high voltage
capability with low rDS(ON), low threshold voltage and
low gate charge.
MARKING CODE: CDM10-650
TO-220 CASE
APPLICATIONS:
•
Power Factor Correction
•
Motor drives
•
Alternative energy inverters
•
Solid state lighting
FEATURES:
•
High voltage capability (VDS=650V)
•
Low gate charge (Qgs=8.0nC)
•
Low rDS(ON) (0.88Ω)
MAXIMUM RATINGS:
(TA=25°C unless otherwise noted)
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (Steady State)
ID
Maximum Pulsed Drain Current, tp=10μs
Continuous Source Current (Body Diode)
Maximum Pulsed Source Current (Body Diode)
Single Pulse Avalanche Energy (Note 1)
Power Dissipation
Power Dissipation (TC=25°C)
Operating and Storage Junction Temperature
Thermal Resistance
Thermal Resistance
Note 1: L=30mH, IAS=6.2A, VDD=50V, RG=25Ω, Initial TJ=25°C
650
30
10
40
10
40
608
2.0
156
-55 to +150
0.8
62.5
UNITS
V
V
A
A
A
A
mJ
W
W
°C
°C/W
°C/W
IDM
IS
ISM
EAS
PD
PD
TJ, Tstg
JC
JA
ELECTRICAL CHARACTERISTICS:
(TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
I
GSSF, IGSSR VGS=30V, VDS=0
10
IDSS
VDS=650V, VGS=0
0.03
BVDSS
VGS=0, ID=250μA
650
VGS(th)
VSD
rDS(ON)
Crss
Ciss
Coss
VGS=VDS, ID=250μA
VGS=0, IS=10A
VGS=10V, ID=5.0A
VDS=25V,
VDS=25V,
VDS=25V,
VGS=0, f=1.0MHz
VGS=0, f=1.0MHz
VGS=0, f=1.0MHz
2.0
2.8
0.9
0.88
1.2
1168
129
MAX
100
1.0
4.0
1.4
1.0
UNITS
nA
μA
V
V
V
Ω
pF
pF
pF
R1 (18-August 2014)
CDM22010-650
SILICON
N-CHANNEL POWER MOSFET
10 AMP, 650 VOLT
ELECTRICAL
SYMBOL
Qg(tot)
Qgs
Qgd
td
tr
ts
tf
trr
Qrr
CHARACTERISTICS - Continued:
(TA=25°C unless otherwise noted)
TEST CONDITIONS
TYP
UNITS
VDS=520V, VGS=10V, ID=10A (Note 2)
20
nC
VDS=520V, VGS=10V, ID=10A (Note 2)
VDS=520V, VGS=10V, ID=10A (Note 2)
VDD=325V, ID=10A, RG=25Ω (Note 2)
VDD=325V,
VDD=325V,
VDD=325V,
ID=10A, RG=25Ω (Note 2)
ID=10A, RG=25Ω (Note 2)
ID=10A, RG=25Ω (Note 2)
VGS=0, IS=10A, di/dt=100A/μs (Note 2)
VGS=0, IS=10A, di/dt=100A/μs (Note 2)
8.0
7.0
20
33
57
36
570
4.7
nC
nC
ns
ns
ns
ns
ns
μC
Note 2: Pulse Width < 300μs, Duty Cycle < 2%
TO-220 CASE - MECHANICAL OUTLINE
PIN CONFIGURATION
LEAD CODE:
1) Gate
2) Drain
3) Source
Tab) Drain
MARKING CODE: CDM10-650
R1 (18-August 2014)
w w w. c e n t r a l s e m i . c o m
CDM22010-650
SILICON
N-CHANNEL POWER MOSFET
10 AMP, 650 VOLT
TYPICAL ELECTRICAL CHARACTERISTICS
R1 (18-August 2014)
w w w. c e n t r a l s e m i . c o m
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