NHPV15S600G,
NHPJ15S600G
SWITCHMODE
Power Rectifiers
Features
•
•
•
•
•
•
•
•
Ultrafast 30 Nanosecond Recovery Time
150°C Operating Junction Temperature
High Voltage Capability of 600 V
ESD Ratings:
♦
Machine Model = C
♦
Human Body Model = 3A
Low Forward Drop
Low Leakage Specified @ 125°C Case Temperature
These Devices are Pb−Free and are RoHS Compliant*
NHPJ15S600G is Halogen−Free/BFR−Free
http://onsemi.com
PLANAR ULTRAFAST
RECTIFIERS 15 A, 600 V
1
4
3
3
4
1
Mechanical Characteristics:
•
Case: Epoxy, Molded
•
Weight: 1.9 Grams (Approximately)
•
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
•
Lead Temperature for Soldering Purposes: 260°C Max. for
10 Seconds
1
3
TO−220AC
CASE 221B
1
3
TO−220 FULLPAK
CASE 221AG
MARKING DIAGRAMS
AY WW
HPV15S600G
KA
AYWW
HPJ15S600G
KA
A
Y
WW
G
KA
=
=
=
=
=
Assembly Location
Year
Work Week
Pb−Free Package
Diode Polarity
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
©
Semiconductor Components Industries, LLC, 2013
March, 2013
−
Rev. 0
1
Publication Order Number:
NHPV15S600/D
NHPV15S600G, NHPJ15S600G
MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current (Rated V
R
)
Peak Rectified Forward Current (Rated V
R
, Square Wave, 20 kHz)
TO−220AC
TO−220FP
TO−220AC
TO−220FP
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
I
FRM
I
FSM
T
J
, T
stg
Value
600
Unit
V
15 A @ T
C
= 118°C
15 A @ T
C
= 60°C
15 A @ T
C
= 110°C
15 A @ T
C
= 40°C
150
−55
to +150
A
A
A
°C
Nonrepetitive Peak Surge Current (Surge applied at rated load conditions
halfwave, single phase, 60 Hz)
Operating Junction Temperature and Storage Temperature Range
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Characteristic
NHPV15S600G: Thermal Resistance
Junction−to−Case
Junction−to−Ambient
NHPJ15S600G: Thermal Resistance
Junction−to−Case
Junction−to−Ambient
Symbol
R
qJC
R
qJA
R
qJC
R
qJA
Value
1.5
73
4.25
75
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage (Note 1)
(i
F
= 15 A, T
C
= 125°C)
(i
F
= 15 A, T
C
= 25°C)
Maximum Instantaneous Reverse Current (Note 1)
(Rated DC Voltage, T
C
= 125°C)
(Rated DC Voltage, T
C
= 25°C)
Maximum Reverse Recovery
Time
(I
F
= 0.5 A, I
rr
= 0.25 A, I
R
= 1 A)
(I
F
= 1 A, dI
F
/dt =
−50
A/ms, V
R
= 30 V)
Current
Charge
Softness
(I
F
= 15 A, dI
F
/dt =
−200
A/ms, T
C
= 125°C)
Maximum Forward Recovery
Time
Voltage
(I
F
= 15 A, dI
F
/dt = 120 A/ms, T
C
= 25°C)
1. Pulse Test: Pulse Width = 300
ms,
Duty Cycle
≤
2.0%.
Symbol
v
F
Typ
1.5
2.7
46
0.1
−
−
7.7
220
0.15
Max
1.8
3.2
800
60
30
50
9.9
−
−
Unit
V
i
R
mA
t
rr
ns
I
RM
Q
rr
S
A
nC
−
t
fr
V
FP
200
6
ns
V
ORDERING INFORMATION
Device
NHPV15S600G
NHPJ15S600G
Package
TO−220AC
(Pb−Free)
TO−220FP
(Pb−Free / Halide−Free)
Shipping
†
50 Units / Rail
50 Units / Rail
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2
NHPV15S600G, NHPJ15S600G
TYPICAL CHARACTERISTICS
100
i
F
, INSTANTANEOUS FORWARD
CURRENT (A)
1000
I
R
, INSTANTANEOUS REVERSE
CURRENT (mA)
T
A
= 150°C
100
10
1
T
A
= 125°C
T
A
= 150°C
10
T
A
= 25°C
T
A
= 125°C
1
0.1
T
A
= 25°C
0
100
200
300
400
500
600
0.1
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.01
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
V
R
, INSTANTANEOUS REVERSE VOLTAGE (V)
Figure 1. Typical Instantaneous Forward
Characteristics
1000
C, JUNCTION CAPACITANCE (pF)
I
F(AV)
, AVERAGE FORWARD
CURRENT (A)
T
J
= 25°C
30
25
20
15
10
5
0
Figure 2. Typical Reverse Characteristics
dc
R
qJC
= 1.5°C/W
Square Wave
100
10
0.1
1
10
100
1000
60
80
100
120
140
V
R
, REVERSE VOLTAGE (V)
T
C
, CASE TEMPERATURE (°C)
Figure 3. Typical Junction Capacitance
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
30
P
F(AV)
, AVERAGE FORWARD
POWER DISSIPATION (W)
25
dc
20
15
10
5
0
0 10
30
50
70
90
110
130
150
R
qJC
= 4.25°C/W
30
25
20
15
10
5
0
Figure 4. Current Derating TO−220AC
I
PK
/I
AV
= 20
I
PK
/I
AV
= 10
I
PK
/I
AV
= 5
dc
Square Wave
Square Wave
T
J
= 150°C
0
2
4
6
8
10
12
14
16
18
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
T
C
, CASE TEMPERATURE (°C)
Figure 5. Current Derating TO−220 FULLPAK
Figure 6. Forward Power Dissipation
http://onsemi.com
3
NHPV15S600G, NHPJ15S600G
PACKAGE DIMENSIONS
TO−220 TWO−LEAD
CASE 221B−04
ISSUE E
C
Q
B
F
T
S
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
DIM
A
B
C
D
F
G
H
J
K
L
Q
R
S
T
U
INCHES
MIN
MAX
0.595
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.161
0.190
0.210
0.110
0.130
0.014
0.025
0.500
0.562
0.045
0.060
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
MILLIMETERS
MIN
MAX
15.11
15.75
9.65
10.29
4.06
4.82
0.64
0.89
3.61
4.09
4.83
5.33
2.79
3.30
0.36
0.64
12.70
14.27
1.14
1.52
2.54
3.04
2.04
2.79
1.14
1.39
5.97
6.48
0.000
1.27
4
A
1
3
U
H
K
L
G
D
J
R
TO−220 FULLPAK, 2−LEAD
CASE 221AG
ISSUE O
E
E/2
4
A
P
0.14
M
B
H1
A
A1
SEATING
PLANE
B A
M
Q
1 2 3
D
C
NOTE 3
L
L1
b
0.25
M
3X
3X
c
B A
M
b2
e
e1
C
A2
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. CONTOUR UNCONTROLLED IN THIS AREA.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH
AND GATE PROTRUSIONS. MOLD FLASH AND GATE
PROTRUSIONS NOT TO EXCEED 0.13 PER SIDE. THESE
DIMENSIONS ARE TO BE MEASURED AT OUTERMOST
EXTREME OF THE PLASTIC BODY.
5. DIMENSION b2 DOES NOT INCLUDE DAMBAR
PROTRUSION. LEAD WIDTH INCLUDING PROTRUSION
SHALL NOT EXCEED 2.00.
MILLIMETERS
DIM MIN
MAX
A
4.30
4.70
A1
2.50
2.90
A2
2.50
2.70
b
0.54
0.84
b2
1.10
1.40
c
0.49
0.79
D
14.22
15.88
E
9.65
10.67
e
2.54 BSC
e1
5.08 BSC
H1
5.97
6.48
L
12.70
14.73
L1
---
2.80
P
3.00
3.40
Q
2.80
3.20
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
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limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
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NHPV15S600/D
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