Analog Switch ICs High-Bandwidth Quad DPDT Switch
参数名称 | 属性值 |
Product Attribute | Attribute Value |
制造商 Manufacturer | Maxim(美信半导体) |
产品种类 Product Category | Analog Switch ICs |
RoHS | Details |
Number of Switches | 4 Switch |
Configuration | 4 x DPDT |
On Resistance - Max | 3.5 Ohms |
Switch Voltage - Max | 5.25 V |
On Time - Max | 800 ns |
Off Time - Max | 800 ns |
工作电源电压 Operating Supply Voltage | 1.8 V to 5.5 V |
最大工作温度 Maximum Operating Temperature | + 85 C |
安装风格 Mounting Style | SMD/SMT |
封装 / 箱体 Package / Case | UCSP-36 |
系列 Packaging | Cut Tape |
系列 Packaging | MouseReel |
系列 Packaging | Reel |
Supply Type | Single Supply |
Supply Current - Max | 10 nA |
最小工作温度 Minimum Operating Temperature | - 40 C |
Pd-功率耗散 Pd - Power Dissipation | 1.221 W |
工厂包装数量 Factory Pack Quantity | 2500 |
电源电压-最大 Supply Voltage - Max | 5.5 V |
电源电压-最小 Supply Voltage - Min | 1.8 V |
Switch Continuous Current | 100 mA |
MAX4760AEBX-T | MAX4761EBX-T | MAX4760EWX-T | MAX4760ETX-T | MAX4760ETX | MAX4760EBX+T | MAX4761ETX+T | |
---|---|---|---|---|---|---|---|
描述 | Analog Switch ICs High-Bandwidth Quad DPDT Switch | Analog Switch ICs MAX4761EBX-T | Analog Switch ICs High-Bandwidth Quad DPDT Switch | Analog Switch ICs High-Bandwidth, Quad DPDT Switches | Analog Switch ICs High-Bandwidth, Quad DPDT Switches | Analog Switch ICs High-Bandwidth Quad DPDT Switch | Analog Switch ICs High-Bandwidth Quad DPDT Switch |
是否无铅 | - | 含铅 | - | 含铅 | 含铅 | 不含铅 | 不含铅 |
是否Rohs认证 | - | 不符合 | - | 不符合 | 不符合 | 符合 | 符合 |
厂商名称 | - | Maxim(美信半导体) | - | Maxim(美信半导体) | Maxim(美信半导体) | Maxim(美信半导体) | Maxim(美信半导体) |
零件包装代码 | - | BGA | - | QFN | QFN | BGA | QFN |
包装说明 | - | UCSP-32 | - | 6 X 6 MM, 0.80 MM HEIGHT, MO-220WJJD-1, TQFN-36 | 6 X 6 MM, 0.80 MM HEIGHT, MO-220WJJD-1, TQFN-36 | VFBGA, BGA36,6X6,20 | HVQCCN, LCC36,.25SQ,20 |
针数 | - | 32 | - | 36 | 36 | 36 | 36 |
Reach Compliance Code | - | not_compliant | - | not_compliant | not_compliant | compliant | compliant |
ECCN代码 | - | EAR99 | - | EAR99 | EAR99 | EAR99 | EAR99 |
模拟集成电路 - 其他类型 | - | DPDT | - | DPDT | DPDT | DPDT | DPDT |
JESD-30 代码 | - | S-PBGA-B32 | - | S-XQCC-N36 | S-XQCC-N36 | S-PBGA-B36 | S-XQCC-N36 |
JESD-609代码 | - | e0 | - | e0 | e0 | - | e3 |
长度 | - | 3.06 mm | - | 6 mm | 6 mm | 3.06 mm | 6 mm |
湿度敏感等级 | - | 1 | - | - | 1 | 1 | 1 |
信道数量 | - | 1 | - | 2 | 2 | 2 | 2 |
功能数量 | - | 4 | - | 4 | 4 | 4 | 4 |
端子数量 | - | 32 | - | 36 | 36 | 36 | 36 |
标称断态隔离度 | - | 100 dB | - | 100 dB | 100 dB | 80 dB | 80 dB |
通态电阻匹配规范 | - | 0.2 Ω | - | 0.2 Ω | 0.2 Ω | 0.2 Ω | 0.2 Ω |
最大通态电阻 (Ron) | - | 3.5 Ω | - | 3.5 Ω | 3.5 Ω | 3.5 Ω | 3.5 Ω |
最高工作温度 | - | 85 °C | - | 85 °C | 85 °C | 85 °C | 85 °C |
最低工作温度 | - | -40 °C | - | -40 °C | -40 °C | -40 °C | -40 °C |
输出 | - | SEPARATE OUTPUT | - | SEPARATE OUTPUT | SEPARATE OUTPUT | SEPARATE OUTPUT | SEPARATE OUTPUT |
封装主体材料 | - | PLASTIC/EPOXY | - | UNSPECIFIED | UNSPECIFIED | PLASTIC/EPOXY | UNSPECIFIED |
封装代码 | - | BGA | - | HVQCCN | HVQCCN | VFBGA | HVQCCN |
封装等效代码 | - | BGA36,6X6,20 | - | LCC36,.25SQ,20 | LCC36,.25SQ,20 | BGA36,6X6,20 | LCC36,.25SQ,20 |
封装形状 | - | SQUARE | - | SQUARE | SQUARE | SQUARE | SQUARE |
封装形式 | - | GRID ARRAY | - | CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE | CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE |
峰值回流温度(摄氏度) | - | 240 | - | NOT SPECIFIED | 240 | 260 | 260 |
电源 | - | 3/5 V | - | 3/5 V | 3/5 V | 3/5 V | 3/5 V |
认证状态 | - | Not Qualified | - | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
座面最大高度 | - | 0.67 mm | - | 0.8 mm | 0.8 mm | 0.67 mm | 0.8 mm |
最大供电电压 (Vsup) | - | 5.5 V | - | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
最小供电电压 (Vsup) | - | 1.8 V | - | 1.8 V | 1.8 V | 1.8 V | 1.8 V |
标称供电电压 (Vsup) | - | 3 V | - | 3 V | 3 V | 3 V | 3 V |
表面贴装 | - | YES | - | YES | YES | YES | YES |
最长断开时间 | - | 50 ns | - | 50 ns | 50 ns | 60 ns | 60 ns |
最长接通时间 | - | 140 ns | - | 140 ns | 140 ns | 150 ns | 150 ns |
切换 | - | BREAK-BEFORE-MAKE | - | BREAK-BEFORE-MAKE | BREAK-BEFORE-MAKE | BREAK-BEFORE-MAKE | BREAK-BEFORE-MAKE |
技术 | - | CMOS | - | CMOS | CMOS | CMOS | CMOS |
温度等级 | - | INDUSTRIAL | - | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL |
端子面层 | - | Tin/Lead (Sn/Pb) | - | Tin/Lead (Sn/Pb) | Tin/Lead (Sn85Pb15) | - | Matte Tin (Sn) |
端子形式 | - | BALL | - | NO LEAD | NO LEAD | BALL | NO LEAD |
端子节距 | - | 0.5 mm | - | 0.5 mm | 0.5 mm | 0.5 mm | 0.5 mm |
端子位置 | - | BOTTOM | - | QUAD | QUAD | BOTTOM | QUAD |
处于峰值回流温度下的最长时间 | - | 20 | - | NOT SPECIFIED | 20 | 30 | 30 |
宽度 | - | 3.06 mm | - | 6 mm | 6 mm | 3.06 mm | 6 mm |
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