PD - 94499A
AUTOMOTIVE MOSFET
IRFR3504
IRFU3504
HEXFET
®
Power MOSFET
D
Features
●
●
●
●
●
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
G
V
DSS
= 40V
R
DS(on)
= 9.2mΩ
S
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to
achieve extremely low on-resistance per silicon area. Addi-
tional features of this product are a 175°C junction operating
temperature, fast switching speed and improved repetitive
avalanche rating. These features combine to make this design
an extremely efficient and reliable device for use in Automotive
applications and a wide variety of other applications.
The D-Pak is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU series) is for through-hole mounting
applications. Power dissipation levels up to 1.5 watts are
possible in typical surface mount applications.
I
D
= 30A
D-Pak
IRFR3504
I-Pak
IRFU3504
Absolute Maximum Ratings
Parameter
I
D
@ T
C
I
D
@ T
C
I
D
@ T
C
I
DM
P
D
@T
C
= 25°C
= 100°C
= 25°C
= 25°C
Continuous Drain Current, V
GS
@ 10V (Silicon limited)
Continuous Drain Current, V
GS
@ 10V (See Fig.9)
Continuous Drain Current, V
GS
@ 10V (Package limited)
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
87
61
30
350
140
0.92
± 20
240
480
See Fig.12a, 12b, 15, 16
-55 to + 175
Units
A
V
GS
E
AS
E
AS
(tested)
I
AR
E
AR
T
J
T
STG
W
W/°C
V
mJ
A
mJ
°C
300 (1.6mm from case )
Thermal Resistance
Parameter
R
θJC
R
θJA
R
θJA
Junction-to-Case
Junction-to-Ambient (PCB mount)
Junction-to-Ambient
Typ.
–––
–––
–––
Max.
1.09
50
110
Units
°C/W
HEXFET(R) is a registered trademark of International Rectifier.
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1
12/11/02
IRFR/U3504
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
g
fs
Forward Transconductance
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min.
40
–––
–––
2.0
40
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.041
7.8
–––
–––
–––
–––
–––
–––
48
12
13
11
53
36
22
4.5
7.5
2150
580
46
2830
510
870
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= 250µA
––– V/°C Reference to 25°C, I
D
= 1mA
9.2
mΩ V
GS
= 10V, I
D
= 30A
4.0
V
V
DS
= 10V, I
D
= 250µA
–––
S
V
DS
= 10V, I
D
= 30A
20
V
DS
= 40V, V
GS
= 0V
µA
250
V
DS
= 40V, V
GS
= 0V, T
J
= 125°C
200
V
GS
= 20V
nA
-200
V
GS
= -20V
71
I
D
= 30A
18
nC V
DS
= 32V
20
V
GS
= 10V
–––
V
DD
= 20V
–––
I
D
= 30A
ns
–––
R
G
= 6.8Ω
–––
V
GS
= 10V
D
–––
Between lead,
nH 6mm (0.25in.)
G
–––
from package
S
and center of die contact
–––
V
GS
= 0V
–––
V
DS
= 25V
–––
pF
ƒ = 1.0MHz, See Fig. 5
–––
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= 32V, ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= 0V to 32V
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
87
––– –––
showing the
A
G
integral reverse
––– ––– 350
S
p-n junction diode.
––– ––– 1.3
V
T
J
= 25°C, I
S
= 30A, V
GS
= 0V
––– 53
80
ns
T
J
= 25°C, I
F
= 30A, V
DD
= 20V
––– 86 130
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
2
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IRFR/U3504
1000
TOP
VGS
15V
10V
7.0V
6.0V
5.5V
5.0V
4.5V
4.0V
1000
TOP
VGS
15V
10V
7.0V
6.0V
5.5V
5.0V
4.5V
4.0V
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
100
100
BOTTOM
10
BOTTOM
1
10
4.0V
0.1
4.0V
1
0.01
20µs PULSE WIDTH
Tj = 25°C
0.001
0.1
1
10
100
1000
20µs PULSE WIDTH
Tj = 175°C
0.1
0.1
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000.00
80
T J = 175°C
G fs , Forward Transconductance (S)
ID, Drain-to-Source Current
(Α
)
70
60
50
40
30
20
10
0
VDS = 25V
Ã
100.00
T J = 25°C
10.00
TJ = 175°C
1.00
TJ = 25°C
VDS = 25V
20µs PULSE WIDTH
20µs PULSE WIDTH
80
100
120
0.10
2.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
0
20
40
60
VGS, Gate-to-Source Voltage (V)
ID,Drain-to-Source Current (A)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Typical Forward Transconductance
Vs. Drain Current
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3
IRFR/U3504
100000
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
V
GS
, Gate-to-Source Voltage (V)
8
12
I
D
=
30A
10
V
DS
= 32V
V
DS
= 20V
V
DS
= 8V
10000
C, Capacitance(pF)
Ciss
1000
Coss
6
4
100
Crss
2
10
1
10
100
0
0
10
20
30
40
50
VDS, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
OPERATION IN THIS AREA
LIMITED BY R DS (on)
100
T
J
= 175
°
C
ID, Drain-to-Source Current (A)
I
SD
, Reverse Drain Current (A)
100
100µsec
10
T
J
= 25
1
°
C
10
Tc = 25°C
Tj = 175°C
Single Pulse
1
1
10
1msec
10msec
100
1000
V
GS
= 0 V
0.1
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
SD
,Source-to-Drain Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRFR/U3504
100
2.5
I
D
= 87A
LIMITED BY PACKAGE
80
R
DS(on)
, Drain-to-Source On Resistance
2.0
I
D
, Drain Current (A)
(Normalized)
60
1.5
40
1.0
20
0.5
V
GS
= 10V
0.0
-60
-40
-20
0
20
40
60
80
100 120 140 160 180
0
25
50
75
100
125
150
175
T
C
, Case Temperature ( °C)
T
J
, Junction Temperature
(
°
C)
Fig 9.
Maximum Drain Current Vs.
Case Temperature
Fig 10.
Normalized On-Resistance
Vs. Temperature
10
(Z
thJC
)
1
D = 0.50
Thermal Response
0.20
0.10
0.1
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D =
2. Peak T
0.01
0.00001
0.0001
0.001
0.01
t
1
/ t
2
+T
C
1
P
DM
t
1
t
2
J
= P
DM
x Z
thJC
0.1
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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