BULB7216
BUL7216
High voltage fast-switching
NPN power transistor
Features
■
■
■
■
Low spread of dynamic parameters
High voltage capability
Minimum lot-to-lot spread for reliable operation
Very high switching speed
TO-220
3
1
3
1
2
3
12
I
2
PAK
Applications
■
Electronic ballast for fluorescent lighting (277 V
push-pull and 347 V half bridge topoligies)
D
2
PAK
Description
The devices are manufactured using diffused
collector technology to enhance switching speeds
and tight h
FE
while maintaining the wide RBSOA.
Figure 1.
Internal schematic diagram
Table 1.
Device summary
Marking
BUL7216
BULB7216
BULB7216
Package
TO-220
I
2
PAK
D
2
PAK
Packaging
Tube
Tube
Tape and reel
Order code
BUL7216
BULB7216-1
BULB7216T4
November 2007
Rev 2
1/13
www.st.com
13
Contents
BULB7216 - BUL7216
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3
4
5
Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2/13
BULB7216 - BUL7216
Electrical ratings
1
Electrical ratings
Table 2.
Symbol
V
CES
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
T
stg
T
J
Absolute maximum rating
Parameter
Collector-emitter voltage (V
BE
= 0)
Collector-emitter voltage (I
B
= 0)
Emitter-base voltage (I
C
= 0)
Collector current
Collector peak current (t
P
< 5ms)
Base current
Base peak current (t
P
< 5ms)
Total dissipation at T
c
= 25°C
Storage temperature
Max. operating junction temperature
Value
1600
700
12
3
6
1
2
80
-65 to 150
150
Unit
V
V
V
A
A
A
A
W
°C
°C
Table 3.
Symbol
Thermal data
Parameter
Value
1.56
Unit
°C/W
R
thj-case
Thermal resistance junction - case
3/13
Electrical characteristics
BULB7216 - BUL7216
2
Electrical characteristics
(T
case
= 25°C unless otherwise specified)
Table 4.
Symbol
I
CES
I
CEO
I
CBO
I
EBO
Electrical characteristics
Parameter
Collector cut-off current
(V
BE
= 0)
Collector cut-off current
(I
B
= 0)
Collector cut-off current
(I
E
= 0)
Emitter cut-off current
(I
C
= 0)
Collector-emitter
breakdown voltage
(I
B
= 0)
Emitter-base breakdown
voltage (I
C
= 0)
Collector-emitter
breakdown voltage
(V
BE
= 0)
Collector-emitter
saturation voltage
Test conditions
V
CE
=1600 V
V
CE
=1600 V
V
CE
=680 V
V
CB
=1600 V
V
CB
=1600 V
V
EB
=12 V
T
C
= 125 °C
Min.
Typ.
Max.
0.1
0.5
0.1
0.1
0.5
1
Unit
mA
mA
mA
mA
mA
mA
T
C
= 125 °C
V
(BR)CEO(1)
V
(BR)EBO(1)
V
(BR)CES(1)
I
C
= 1 mA
700
V
I
E
= 1 mA
12
V
I
C
= 0.1 mA
I
C
= 0.25 A
_
I
C
= 0.5 A
_
I
C
= 0.8 A
_
I
C
= 0.5 A
_
I
C
= 1 A
_
I
C
= 2 A
_
I
B
= 25 mA
I
B
= 50 mA
I
B
= 80 mA
I
B
= 100 mA
I
B
= 100 mA
I
B
= 400 mA
1600
1
1.5
3
1
1.1
1.2
7
16
4
19
18
35
11
V
V
V
V
V
V
V
V
CE(sat)
(1)
V
BE(sat)
(1)
Base-emitter saturation
voltage
h
FE (1)
DC current gain
I
C
= 0.5 A
_
V
CE
= 1 V
I
C
= 0.5 A
_ _
V
CE
= 3 V
I
C
= 2 A
_ _
V
CE
= 5 V
I
C
= 1 A
_ _
V
CE
= 10 V
I
C
= 0.5 A
I
B1
= 50 mA
P.W.= 300 µs
L = 2 mH
V
BE(off)
= -5 V
V
CC
= 125 V
I
B2
= -0.5 A
D.C.= 2%
C = 1.8 nF
t
d
t
r
t
s
t
f
E
ar
Resistive load
Delay time
Rise time
Storage time
Fall time
Repetitive avalanche
energy
0.3
1.1
0.9
0.35
8
µs
µs
µs
µs
mJ
1. Pulsed duration = 300 µs, duty cycle
≤
1.5%
4/13
BULB7216 - BUL7216
Electrical characteristics
2.1
Electrical characteristics (curves)
Figure 2.
Derating curve
Figure 3.
Reverse biased safe
operating area
Figure 4.
DC current gain
Figure 5.
DC current gain
Figure 6.
Collector - emitter saturation Figure 7.
voltage
Base - emitter saturation
voltage
5/13
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