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IS49RL36160-107EBL

产品描述DRAM RLDRAM3 Memory, 576M Common I/O, 933Mhz
产品类别存储    存储   
文件大小3MB,共115页
制造商ISSI(芯成半导体)
官网地址http://www.issi.com/
标准
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IS49RL36160-107EBL概述

DRAM RLDRAM3 Memory, 576M Common I/O, 933Mhz

IS49RL36160-107EBL规格参数

参数名称属性值
Product AttributeAttribute Value
制造商
Manufacturer
ISSI(芯成半导体)
产品种类
Product Category
DRAM
RoHSDetails
类型
Type
SDRAM - DDR1
Data Bus Width36 bit
Organization16 M x 36
封装 / 箱体
Package / Case
BGA-168
Memory Size576 Mbit
Maximum Clock Frequency933 MHz
Access Time8 ns
电源电压-最大
Supply Voltage - Max
1.42 V
电源电压-最小
Supply Voltage - Min
1.28 V
Supply Current - Max1.14 A
最小工作温度
Minimum Operating Temperature
0 C
最大工作温度
Maximum Operating Temperature
+ 95 C
系列
Packaging
Tray
安装风格
Mounting Style
SMD/SMT
Moisture SensitiveYes
工作电源电压
Operating Supply Voltage
2.5 V
工厂包装数量
Factory Pack Quantity
119

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576Mb: x18, x36 RLDRAM 3
Features
RLDRAM 3
IS49RL18320– 2 Meg x 18 x 16 Banks
IS49RL36160– 1 Meg x 36 x 16 Banks
Features
1066 MHz DDR operation (2133 Mb/s/ball data
rate)
76.8 Gb/s peak bandwidth (x36 at 1066 MHz clock
frequency)
Organization
– 32 Meg x 18, and 16 Meg x 36 common I/O (CIO)
– 16 banks
1.2V center-terminated push/pull I/O
2.5V V
EXT
, 1.35V V
DD
, 1.2V V
DDQ
I/O
Reduced cycle time (
t
RC (MIN) = 8 - 12ns)
SDR addressing
Programmable READ/WRITE latency (RL/WL) and
burst length
Data mask for WRITE commands
Fr
x,
DK
x#)
and output data clocks (QK
x,
QK
x#)
On-die DLL generates CK edge-aligned data and
64ms refresh (128K refresh per 64ms)
168-ball FBGA package
Ω
or 60
Ω
matched impedance outputs
Integrated on-die termination (ODT)
Single or multibank writes
Extended operating range (200–1066 MHz)
READ training register
Multiplexed and non-multiplexed addressing capa-
bilities
Mirror function
Output driver and ODT calibration
JTAG interface (IEEE 1149.1-2001)
Clock cycle and
t
RC timing
– 0.93ns and
t
RC (MIN) = 8ns
(RL3-2133)
– 0.93ns and
t
RC (MIN) = 10ns
(RL3-2133)
– 1.07ns and
t
RC (MIN) = 8ns
(RL3-1866)
– 1.07ns and
t
RC (MIN) = 10ns
(RL3-1866)
– 1.25ns and
t
RC (MIN) = 8ns
(RL3-1600)
– 1.25ns and
t
RC (MIN) = 10ns
(RL3-1600)
– 1.25ns and
t
RC (MIN) = 12ns
(RL3-1600)
Con guration
-32 Meg x 18
- 16 Meg x 36
Operating Temperature
– Commercial (T
C
= 0° to +95°C)
– Industrial (T
C
= –40°C to +95°C)
Package
– 168-ball FBGA
– 168-ball FBGA (Pb-free)
Revision
Options
Copyright © 2014 Integrated Silicon Solu on, Inc. All rights reserved. ISSI reserves the right to make changes to this specifica on and its products at any me without
no ce. ISSI assumes no liability arising out of the applica on or use of any informa on, products or services described herein. Customers are advised to obtain the
latest version of this device specifica on before relying on any published informa on and before placing orders for produ.ct
s
Integrated Silicon Solu on, Inc. does not recommend the use of any of its products in life support applica ons where the failure or malfunc on of the product can
reasonably be expected to cause failure of the life support system or to significantly affect its safety or effec veness. Products are not authorized for use in such
applica ons unless Integrated Silicon Solu on, Inc. receives wri en assurance to its sa sfac on, that:
a.) the risk of injury or damage has been minimized;
b.) the user assume all such risks; and
c.) poten al liability of Integrated Silicon Solu on, Inc is adequately protected under the circumstances
RLDRAM® is a registered trademark of Micron Technology, Inc.
Integrated Silicon Solution, Inc. - www.issi.com -
Rev. 00C
11/21/2014
1

 
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